Effects of Channel Width and NH[sub 3] Plasma Passivation on Electrical Characteristics of Polysilicon Thin-Film Transistors by Pattern-Dependent Metal-Induced Lateral Crystallization

2005 ◽  
Vol 152 (7) ◽  
pp. G545 ◽  
Author(s):  
Yung-Chun Wu ◽  
Ting-Chang Chang ◽  
Cheng-Wei Chou ◽  
Yuan-Chun Wu ◽  
Po-Tsun Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Channel Width ◽  
Electrical Characteristics ◽  
Plasma Passivation ◽  
Lateral Crystallization

Effect of Channel Width on the Electrical Characteristics of Amorphous/Nanocrystalline Silicon Bilayer Thin-Film Transistors

2007 ◽  
Vol 54 (5) ◽  
pp. 1265-1269 ◽  
Author(s):  
Argyrios T. Hatzopoulos ◽  
Nikolaos Arpatzanis ◽  
Dimitrios H. Tassis ◽  
Charalabos A. Dimitriadis ◽  
Franois Templier ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Nanocrystalline Silicon ◽  
Channel Width ◽  
Electrical Characteristics

scholarly journals Influence of Oxygen Flow Rate on Channel Width Dependent Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2357
Author(s):  
Gwomei Wu ◽  
Anup K. Sahoo
Keyword(s):  
Thin Film ◽  
Flow Rate ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Oxygen Flow Rate ◽  
Channel Width ◽  
Oxygen Flow ◽  
Indium Gallium Zinc Oxide ◽  
Electrical Characteristics ◽  
Indium Gallium

The effects of various oxygen flows on indium gallium zinc oxide (IGZO) based thin-film transistors (TFTs) with different channel width sizes have been investigated. The IGZO nano-films exhibited amorphous phase while the bandgap energy and sheet resistance increased with increasing oxygen flow rate. The electrical characteristics were evaluated with different sizes in channel width using fixed channel length. The distributions in terms of threshold voltage and current on–off level along the different channel width sizes have been discussed thoroughly. The minimum distribution of threshold voltage was observed at an oxygen flow rate of 1 sccm. The TFT electrical properties have been achieved, using an oxygen flow rate of 1 sccm with 500 µm channel width, the threshold voltage, ratio of on-current to off-current, sub-threshold swing voltage and field effect mobility to be 0.54 V, 106, 0.15 V/decade and 12.3 cm2/V·s, respectively. On the other hand, a larger channel width of 2000 µm could further improve the ratio of on-current to off-current and sub-threshold swing voltage to 107 and 0.11 V/decade. The optimized combination of oxygen flow and channel width showed improved electrical characteristics for TFT applications.

Electrical characteristics of thin-film transistors using field-aided lateral crystallization

1999 ◽  
Vol 75 (15) ◽  
pp. 2235-2237 ◽  
Author(s):  
Seung-Ik Jun ◽  
Yong-Ho Yang ◽  
Jae-Bok Lee ◽  
Duck-Kyun Choi
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Electrical Characteristics ◽  
Lateral Crystallization

scholarly journals The effects of NH3 plasma passivation on polysilicon thin-film transistors

1995 ◽  
Vol 16 (11) ◽  
pp. 503-505 ◽  
Author(s):  
Fang-Shing Wang ◽  
Meng-Jin Tsai ◽  
Huang-Chung Cheng
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Plasma Passivation

Effects of Polystyrene Gate Dielectrics with Various Molecular Weights on Electrical Characteristics of Pentacene Thin-Film Transistors

2014 ◽  
Vol 598 (1) ◽  
pp. 129-134 ◽  
Author(s):  
Sung Woo Lee ◽  
Dong Wook Kim ◽  
Hyunji Shin ◽  
Jong Sun Choi ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Electrical Characteristics ◽  
Molecular Weights
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