scholarly journals The effects of NH3 plasma passivation on polysilicon thin-film transistors

1995 ◽  
Vol 16 (11) ◽  
pp. 503-505 ◽  
Author(s):  
Fang-Shing Wang ◽  
Meng-Jin Tsai ◽  
Huang-Chung Cheng
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Plasma Passivation

O 2‐Plasma Passivation Effects on Polysilicon Thin Film Transistors Using Ion Plating Method

1998 ◽  
Vol 145 (1) ◽  
pp. 252-258 ◽  
Author(s):  
Ching‐Fa Yeh ◽  
Tai‐Ju Chen ◽  
Ming‐Tyang Lin ◽  
Jiann‐Shiun Kao
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Ion Plating ◽  
Plating Method ◽  
Plasma Passivation

Dependences of Structural Parameters on the Characteristics of Poly-Si Thin-Film Transistors after Plasma Passivation

2003 ◽  
Vol 762 ◽  
Author(s):  
Cheng-Ming Yu ◽  
Tiao-Yuan Huang ◽  
Tan-Fu Lei ◽  
Horng-Chih Lin
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Detailed Analysis ◽  
Thin Film Transistors ◽  
Structural Parameters ◽  
Subthreshold Swing ◽  
Device Performance ◽  
Short Channel ◽  
Plasma Passivation ◽  
Si Thin Film

AbstractThe effects of NH3 and H2 plasma passivation on the characteristics of poly-Si thin-film transistors with source/drain extensions induced by a bottom sub-gate were studied. Our results show that significant improvements in device performance can be obtained by both passivation methods. Moreover, NH3-plasma-treatment appears to be more effective in reducing the off-state leakage, subthreshold swing, compared to H2 plasma passivation. NH3 plasma treatment is also found to be more effective in reducing the anomalous subthrehold hump phenomenon observed in non-plasma-treated short-channel devices. Detailed analysis suggests that all these improvements can be explained by the more effective passivation of the traps distributed in both the front and back sides of the channel by NH3 plasma treatment.

Characterization of plasma passivation process for poly-Si thin film transistors (TFTs)

1995 ◽  
Vol 38 (6) ◽  
pp. 1233-1238 ◽  
Author(s):  
M.-J Tsai ◽  
F.-S Wang ◽  
K.-L Cheng ◽  
S.-Y Wang ◽  
M.-S Feng ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Passivation Process ◽  
Plasma Passivation ◽  
Si Thin Film

High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation

2008 ◽  
Vol 93 (5) ◽  
pp. 053505 ◽  
Author(s):  
Jaechul Park ◽  
Sangwook Kim ◽  
Changjung Kim ◽  
Sunil Kim ◽  
Ihun Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Indium Zinc Oxide ◽  
Plasma Passivation
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