Effects of Channel Width and Nitride Passivation Layer on Electrical Characteristics of Polysilicon Thin-Film Transistors

2011 ◽  
Vol 58 (11) ◽  
pp. 3812-3819 ◽  
Author(s):  
Chia-Chun Liao ◽  
Min-Chen Lin ◽  
Tsung-Yu Chiang ◽  
Tien-Sheng Chao
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Passivation Layer ◽  
Channel Width ◽  
Electrical Characteristics

Effect of Channel Width on the Electrical Characteristics of Amorphous/Nanocrystalline Silicon Bilayer Thin-Film Transistors

2007 ◽  
Vol 54 (5) ◽  
pp. 1265-1269 ◽  
Author(s):  
Argyrios T. Hatzopoulos ◽  
Nikolaos Arpatzanis ◽  
Dimitrios H. Tassis ◽  
Charalabos A. Dimitriadis ◽  
Franois Templier ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Nanocrystalline Silicon ◽  
Channel Width ◽  
Electrical Characteristics

scholarly journals Influence of Oxygen Flow Rate on Channel Width Dependent Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2357
Author(s):  
Gwomei Wu ◽  
Anup K. Sahoo
Keyword(s):  
Thin Film ◽  
Flow Rate ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Oxygen Flow Rate ◽  
Channel Width ◽  
Oxygen Flow ◽  
Indium Gallium Zinc Oxide ◽  
Electrical Characteristics ◽  
Indium Gallium

The effects of various oxygen flows on indium gallium zinc oxide (IGZO) based thin-film transistors (TFTs) with different channel width sizes have been investigated. The IGZO nano-films exhibited amorphous phase while the bandgap energy and sheet resistance increased with increasing oxygen flow rate. The electrical characteristics were evaluated with different sizes in channel width using fixed channel length. The distributions in terms of threshold voltage and current on–off level along the different channel width sizes have been discussed thoroughly. The minimum distribution of threshold voltage was observed at an oxygen flow rate of 1 sccm. The TFT electrical properties have been achieved, using an oxygen flow rate of 1 sccm with 500 µm channel width, the threshold voltage, ratio of on-current to off-current, sub-threshold swing voltage and field effect mobility to be 0.54 V, 106, 0.15 V/decade and 12.3 cm2/V·s, respectively. On the other hand, a larger channel width of 2000 µm could further improve the ratio of on-current to off-current and sub-threshold swing voltage to 107 and 0.11 V/decade. The optimized combination of oxygen flow and channel width showed improved electrical characteristics for TFT applications.

Effect of Sc2O3 Passivation Layer on the Electrical Characteristics and Stability of InSnZnO Thin-Film Transistors

2021 ◽  
Vol 68 (10) ◽  
pp. 4956-4961
Author(s):  
Wei Zhong ◽  
Liangyun Kang ◽  
Sunbin Deng ◽  
Lei Lu ◽  
Ruohe Yao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Passivation Layer ◽  
Electrical Characteristics

scholarly journals Enhancement of Electrical Characteristics and Stability of Amorphous Si-Sn-O Thin Film Transistors with SiOx Passivation Layer

Materials ◽  
2018 ◽  
Vol 11 (8) ◽  
pp. 1440 ◽  
Author(s):  
Xianzhe Liu ◽  
Weijing Wu ◽  
Weifeng Chen ◽  
Honglong Ning ◽  
Xiaochen Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Charge Trapping ◽  
Passivation Layer ◽  
Device Performance ◽  
Electrical Characteristics ◽  
Initial State ◽  
Large Size ◽  
Amorphous Si

In this research, a passivated methodology was proposed for achieving good electrical characteristics for back-channel-etch (BCE) typed amorphous Si-Sn-O thin film transistors (a-STO TFTs). This methodology implied that the thermal annealing (i.e., pre-annealing) should be carried out before deposition of a SiOx passivation layer. The pre-annealing played an important role in affecting device performance, which did get rid of the contamination of the lithography process. Simultaneously, the acceptor-like sub-gap density of states (DOS) of devices was extracted for further understanding the reason for improving device performance. It found that the SiOx layer could reduce DOS of the device and successfully protect the device from surroundings. Finally, a-STO TFT applied with this passivated methodology could possess good electrical properties including a saturation mobility of 4.2 ± 0.2 cm2/V s, a low threshold voltage of 0.00 V, a large on/off current ratio of 6.94 × 108, and a steep subthreshold swing of 0.23 V/decade. The threshold voltage slightly shifted under bias stresses and recovered itself to its initial state without any annealing procedure, which was attributed to the charge trapping in the bulk dielectric layers or interface. The results of this study indicate that a-STO TFT could be a robust candidate for realizing a large-size and high-resolution display.

Effects of Polystyrene Gate Dielectrics with Various Molecular Weights on Electrical Characteristics of Pentacene Thin-Film Transistors

2014 ◽  
Vol 598 (1) ◽  
pp. 129-134 ◽  
Author(s):  
Sung Woo Lee ◽  
Dong Wook Kim ◽  
Hyunji Shin ◽  
Jong Sun Choi ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Electrical Characteristics ◽  
Molecular Weights
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