Demonstration of Multiprocessing by Silicon Epitaxy Following In-Situ Cleaning

1991 ◽  
Vol 224 ◽  
Author(s):  
Pushkar P. Apte ◽  
Ramnath Venkatraman ◽  
Krishna C. Saraswat ◽  
Mehrdad M. Moslehi ◽  
Richard Yeakley
Keyword(s):  
Semiconductor Manufacturing ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Crystal Silicon ◽  
Silicon Epitaxy ◽  
Anhydrous Hydrogen Fluoride ◽  
Manufacturing Techniques ◽  
Specific Manifestation ◽  
Low Thermal Budget

AbstractConventional semiconductor manufacturing techniques may be unable to meet technological demands in certain cases, and alternatives need to be investigated. We propose in situ sequential processing, which we define as ‘multiprocessing’, as a possible innovation. We demonstrate a specific manifestation of multiprocessing, namely the integration of a novel in situ pre-clean using anhydrous hydrogen fluoride with chemical vapor deposition of silicon, leading to the growth of high-quality single-crystal silicon epitaxy. Further, we show that the multiprocessing technology is viable for manufacturing, since it is simple, rapid, has a low thermal budget and does not suffer from cross-contamination. Finally, we discuss the possible role of multiprocessing in semiconductor manufacturing.

scholarly journals Модификация соотношения sp^2/sp^3-гибридного углерода в PECVD пленках DLC

2020 ◽  
Vol 54 (9) ◽  
pp. 855
Author(s):  
П.А. Юнин ◽  
А.И. Охапкин ◽  
М.Н. Дроздов ◽  
С.А. Королев ◽  
Е.А. Архипова ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Vapor Deposition ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Diamond Like Carbon ◽  
Crystal Silicon ◽  
Inductively Coupled ◽  
In Situ Methods

Abstract It is known that diamond-like carbon layers consist of carbon components with sp ^2 (graphite) and sp ^3 (diamond) hybridizations of electron orbitals. The quantitative ratio between sp ^2 and sp ^3 components has a profound effect on the structural, morphological, optical, electrical, and mechanical properties of the films. In this study, the possibility of controlling the fractions of sp ^2- and sp ^3-hybridized carbon in diamond-like films produced by plasma-enhanced chemical-vapor deposition onto single-crystal silicon and diamond substrates is analyzed. In-situ methods of controlling the fraction of the sp ^3 component by varying the power of the capacitive and inductively coupled discharges directly during production of the film and ex-situ methods, in which use is made of thermal annealing and the application of an electric field, are demonstrated.

TEM characterization of Au/Polysilicon interactions

1990 ◽  
Vol 48 (4) ◽  
pp. 650-651
Author(s):  
N. David Theodore ◽  
Leslie H. Allen ◽  
C. Barry Carter ◽  
James W. Mayer
Keyword(s):  
Solid Phase ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Electrical Contacts ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Polysilicon Films ◽  
The Stability

Metal/polysilicon investigations contribute to an understanding of issues relevant to the stability of electrical contacts in semiconductor devices. These investigations also contribute to an understanding of Si lateral solid-phase epitactic growth. Metals such as Au, Al and Ag form eutectics with Si. reactions in these metal/polysilicon systems lead to the formation of large-grain silicon. Of these systems, the Al/polysilicon system has been most extensively studied. In this study, the behavior upon thermal annealing of Au/polysilicon bilayers is investigated using cross-section transmission electron microscopy (XTEM). The unique feature of this system is that silicon grain-growth occurs at particularly low temperatures ∽300°C).Gold/polysilicon bilayers were fabricated on thermally oxidized single-crystal silicon substrates. Lowpressure chemical vapor deposition (LPCVD) at 620°C was used to obtain 100 to 400 nm polysilicon films. The surface of the polysilicon was cleaned with a buffered hydrofluoric acid solution. Gold was then thermally evaporated onto the samples.

Single Crystal Silicon Carbide On Silicon Using A Supersonic Gas Jet Of Methylsilane

1997 ◽  
Vol 483 ◽  
Author(s):  
S. A. Ustin ◽  
C. Long ◽  
L. Lauhon ◽  
W. Ho
Keyword(s):  
Growth Rate ◽  
Growth Rates ◽  
Single Crystal Silicon ◽  
Maximum Growth ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
Cross Sectional ◽  
Supersonic Molecular Beam ◽  
Transmission Electron

AbstractCubic SiC films have been grown on Si(001) and Si(111) substrates at temperatures between 600 °C and 900 °C with a single supersonic molecular beam source. Methylsilane (H3SiCH3) was used as the sole precursor with hydrogen and nitrogen as seeding gases. Optical reflectance was used to monitor in situ growth rate and macroscopic roughness. The growth rate of SiC was found to depend strongly on substrate orientation, methylsilane kinetic energy, and growth temperature. Growth rates were 1.5 to 2 times greater on Si(111) than on Si(001). The maximum growth rates achieved were 0.63 μm/hr on Si(111) and 0.375μm/hr on Si(001). Transmission electron diffraction (TED) and x-ray diffraction (XRD) were used for structural characterization. In-plane azimuthal (ø-) scans show that films on Si(001) have the correct 4-fold symmetry and that films on Si(111) have a 6-fold symmetry. The 6-fold symmetry indicates that stacking has occurred in two different sequences and double positioning boundaries have been formed. The minimum rocking curve width for SiC on Si(001) and Si(111) is 1.2°. Fourier Transform Infrared (FTIR) absorption was performed to discern the chemical bonding. Cross Sectional Transmission Electron Microscopy (XTEM) was used to image the SiC/Si interface.

scholarly journals Проблемы при использовании травителя KOH-IPA для текстурирования кремниевых пластин

2020 ◽  
Vol 90 (10) ◽  
pp. 1758
Author(s):  
Н.А. Чучвага ◽  
Н.М. Кислякова ◽  
Н.С. Токмолдин ◽  
Б.А. Ракыметов ◽  
А.С. Серикканов
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Main Type ◽  
Single Crystal Silicon ◽  
Silicon Wafers ◽  
Optimal Parameters ◽  
Crystal Silicon ◽  
High Efficiency Solar Cells ◽  
Wet Chemical ◽  
Manufacturing Techniques

The wet chemical treatment of monocrystalline silicon wafers, said method comprising texturing, represents one of the fundamental steps of manufacturing techniques of high-efficiency solar cells. As part of this work, methods for texturing single-crystal silicon wafers for solar cells were studied.As a result of studies, the optimal parameters of texturing technology for the studied samples were determined. The main type of etchant for texturing processes, which is a solution of KOH with isopropanol, is also determined.

Structural Defects of Silicon Epitaxy and Epi/Substrate Interface Related to Improper In-Situ Surface Cleaning at Low Temperatures

1990 ◽  
Vol 202 ◽  
Author(s):  
Tri-Rung Yew ◽  
Rafael Reif
Keyword(s):  
Defect Formation ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Surface Cleaning ◽  
Structural Defects ◽  
Plasma Cleaning ◽  
Substrate Interface ◽  
Silicon Epitaxy ◽  
Pressure Chemical

ABSTRACTThis paper investigates the defect formation at the epi/substrate interface and epitaxial layers due to an improper in–situ Ar or Ar/H2 plasma cleaning at 500–800 °C Deposition process was carried out immediately after the in–situ cleaning process by ultralow pressure chemical vapor deposition process (ULPCVD) from SiH4/H2. Characteristics of the defects and their relationship with damage or impurity contaminations at the interface are presented. Finally, an optimum cleaning condition which ensures high quality epitaxial growth is addressed.

Sign in / Sign up

Export Citation Format

Share Document