Phospho-silicate glass gated 4H-SiC metal-oxide-semiconductor devices: Phosphorus concentration dependence

2016 ◽  
Vol 119 (15) ◽  
pp. 155705 ◽  
Author(s):  
C. Jiao ◽  
A. C. Ahyi ◽  
C. Xu ◽  
D. Morisette ◽  
L. C. Feldman ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Concentration Dependence ◽  
Silicate Glass ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Phosphorus Concentration

Interface state‐induced shift of the oxide and semiconductor core levels for metal–oxide–semiconductor devices

1996 ◽  
Vol 80 (3) ◽  
pp. 1578-1582 ◽  
Author(s):  
H. Kobayashi ◽  
K. Namba ◽  
Y. Yamashita ◽  
Y. Nakato ◽  
T. Komeda ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Interface State ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor
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