Reactive Ion Etching of 6H‐SiC in  SF 6 /  O 2 and  CF 4 /  O 2 with  N 2 Additive for Device Fabrication

1996 ◽  
Vol 143 (3) ◽  
pp. 1037-1042 ◽  
Author(s):  
R. Wolf ◽  
R. Helbig
Keyword(s):  
Reactive Ion Etching ◽  
Device Fabrication ◽  
Ion Etching

scholarly journals Recent Advances in Reactive Ion Etching and Applications of High-Aspect-Ratio Microfabrication

Micromachines ◽  
2021 ◽  
Vol 12 (8) ◽  
pp. 991
Author(s):  
Michael Huff
Keyword(s):  
Aspect Ratio ◽  
Integrated Circuit ◽  
High Aspect Ratio ◽  
Inductively Coupled Plasma ◽  
Reactive Ion Etching ◽  
Fused Silica ◽  
Device Fabrication ◽  
Ion Etching ◽  
Aspect Ratios ◽  
Recent Advances

This paper reviews the recent advances in reaction-ion etching (RIE) for application in high-aspect-ratio microfabrication. High-aspect-ratio etching of materials used in micro- and nanofabrication has become a very important enabling technology particularly for bulk micromachining applications, but increasingly also for mainstream integrated circuit technology such as three-dimensional multi-functional systems integration. The characteristics of traditional RIE allow for high levels of anisotropy compared to competing technologies, which is important in microsystems device fabrication for a number of reasons, primarily because it allows the resultant device dimensions to be more accurately and precisely controlled. This directly leads to a reduction in development costs as well as improved production yields. Nevertheless, traditional RIE was limited to moderate etch depths (e.g., a few microns). More recent developments in newer RIE methods and equipment have enabled considerably deeper etches and higher aspect ratios compared to traditional RIE methods and have revolutionized bulk micromachining technologies. The most widely known of these technologies is called the inductively-coupled plasma (ICP) deep reactive ion etching (DRIE) and this has become a mainstay for development and production of silicon-based micro- and nano-machined devices. This paper will review deep high-aspect-ratio reactive ion etching technologies for silicon, fused silica (quartz), glass, silicon carbide, compound semiconductors and piezoelectric materials.

Reactive Ion Etching of AlN, AlGaN, and GaN Using BCl3

1995 ◽  
Vol 395 ◽  
Author(s):  
W. C. Hughes ◽  
W. H. Rowland ◽  
M. A. L. Johnson ◽  
J. W. Cook ◽  
J. F. Schetzina
Keyword(s):  
Gas Flow ◽  
Light Emitting Diode ◽  
Reactive Ion Etching ◽  
Device Fabrication ◽  
Wet Etching ◽  
Organic Chemical ◽  
Scanning Electron Micrographs ◽  
Ion Etching ◽  
Etch Rates ◽  
Made In

ABSTRACTThe III-V nitrides are promising materials for use in UV-blue-green optoelectronics, high-temperature electronics, and negative-electron-affinity (NEA) electron emitter applications. In order to realize this potential, it is important to develop an etching technology for device fabrication. The stability of the III-V nitrides to harsh chemical environments makes most wet etching extremely difficult, so that dry etching alternatives are desirable. Recent experiments have shown that BCI3-based chemistries are effective for reactive ion etching of GaN and that KOH-based solutions may preferentially etch AIN from GaN. This paper reports on the use of BCI3 for etching AIN and AlGaN in addition to GaN and the creation of structures such as mesas and lines. It also examines the potential use of potassium Hydroxide (KOH) as a wet etchant of the nitrides. AIN, AlGaN, and GaN films grown by either metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) were patterned with Ni in 250 μm × 250 μm squares and 5 μm wide lines to create mesas and lines for typical light emitting diode (LED) or laser diode applications. Reactive ion etching was performed in a commercial reactor using BCI3 pressures ranging from 5 to 30 mTorr. Gas flow rates of 5 to 50 seem and RF powers of 50 to 150 W were employed. High nitride etch rates of up to 730 Å/min. were observed but lower etch rates were needed to avoid etching of the Ni mask. Smooth mesa surfaces and sidewalls were observed in scanning electron micrographs of the etched nitride structures. Mesas as small as 5 μm × 5 μm were patterned and made in this way. Lines were also made in a similar manner as narrow as 5 μm on GaN/AIN epilayers. Subsequent wet etching of these lines showed that KOH-based solutions such as AZ400K developer attack not only AIN but also GaN depending upon the quality of the film. Possibilities for using this wet etch as a defect etchant or selective etch of nitrides on SiC are discussed.

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