Reactive ion etching induced damage evaluation for optoelectronic device fabrication

2006 ◽  
Vol 24 (2) ◽  
pp. 756 ◽  
Author(s):  
G. Morello ◽  
M. Quaglio ◽  
G. Meneghini ◽  
C. Papuzza ◽  
C. Kompocholis
Keyword(s):  
Reactive Ion Etching ◽  
Optoelectronic Device ◽  
Device Fabrication ◽  
Damage Evaluation ◽  
Ion Etching

scholarly journals Recent Advances in Reactive Ion Etching and Applications of High-Aspect-Ratio Microfabrication

Micromachines ◽  
2021 ◽  
Vol 12 (8) ◽  
pp. 991
Author(s):  
Michael Huff
Keyword(s):  
Aspect Ratio ◽  
Integrated Circuit ◽  
High Aspect Ratio ◽  
Inductively Coupled Plasma ◽  
Reactive Ion Etching ◽  
Fused Silica ◽  
Device Fabrication ◽  
Ion Etching ◽  
Aspect Ratios ◽  
Recent Advances

This paper reviews the recent advances in reaction-ion etching (RIE) for application in high-aspect-ratio microfabrication. High-aspect-ratio etching of materials used in micro- and nanofabrication has become a very important enabling technology particularly for bulk micromachining applications, but increasingly also for mainstream integrated circuit technology such as three-dimensional multi-functional systems integration. The characteristics of traditional RIE allow for high levels of anisotropy compared to competing technologies, which is important in microsystems device fabrication for a number of reasons, primarily because it allows the resultant device dimensions to be more accurately and precisely controlled. This directly leads to a reduction in development costs as well as improved production yields. Nevertheless, traditional RIE was limited to moderate etch depths (e.g., a few microns). More recent developments in newer RIE methods and equipment have enabled considerably deeper etches and higher aspect ratios compared to traditional RIE methods and have revolutionized bulk micromachining technologies. The most widely known of these technologies is called the inductively-coupled plasma (ICP) deep reactive ion etching (DRIE) and this has become a mainstay for development and production of silicon-based micro- and nano-machined devices. This paper will review deep high-aspect-ratio reactive ion etching technologies for silicon, fused silica (quartz), glass, silicon carbide, compound semiconductors and piezoelectric materials.

Radiation Damage Evaluation in Excimer Laser Beam Irradiation and Reactive Ion Etching

1986 ◽  
Vol 25 (Part 1, No. 7) ◽  
pp. 1111-1114 ◽  
Author(s):  
Makoto Sekine ◽  
Haruo Okano ◽  
Kikuo Yamabe ◽  
Nobuo Hayasaka ◽  
Yasuhiro Horiike
Keyword(s):  
Laser Beam ◽  
Radiation Damage ◽  
Excimer Laser ◽  
Reactive Ion Etching ◽  
Damage Evaluation ◽  
Beam Irradiation ◽  
Ion Etching ◽  
Laser Beam Irradiation
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