Deposition of Fluorinated Silicon Nitride using Plasma Enhanced Chemical Vapor Deposition Technique

1991 ◽  
Vol 219 ◽  
Author(s):  
Ibrahim Khan ◽  
H. A. Naseem ◽  
S. S. Ang ◽  
W. D. Brown
Keyword(s):  
Silicon Nitride ◽  
Hydrogen Content ◽  
Electronic Devices ◽  
Chemical Vapor ◽  
Dielectric Strength ◽  
Optical And Electrical Properties ◽  
High Hydrogen ◽  
Optical Gap ◽  
Silicon Nitride Films ◽  
Vapor Deposition Technique

ABSTRACTHigh hydrogen content of ammonia/silane deposited silicon nitride films has been linked to instability in electronic devices such as MOSFET's MNOSFET's and TFT's. Fluorine has been proposed to help reduce the hydrogen content of these films. In this work, NF3 was used as a fluorinating agent. Optical and electrical properties were studied as a function of NF3 flow rate. A maximum optical gap of 5.3 eV was obtained with NF3 as compared to 3.2 eV without. The dielectric strength improved from 4 to 10 MV/cm with the addition of NF3. FTIR data show that the Si-N peak shifts to higher wave numbers and the Si-H peak drops below the detection limit with the addition of NF3. Also, the broad Si-N peak at 850 cm-1 is composed of many individual peaks which become discernable when a stainless steel screen is placed in front of the substrate. As the NF3 concentration is increased, a new peak at 1030–1060 cm-1 appears. This may be associated with a N-F vibration (1030 cm-1).

Optical and Electrical Properties of Hydrogenated Amorphous Silicon Nitride Films Deposited in Various PECVD systems

1986 ◽  
Vol 68 ◽  
Author(s):  
Nancy Voke ◽  
Jerzy Kanicki
Keyword(s):  
Silicon Nitride ◽  
Electrical Properties ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Optical And Electrical Properties ◽  
Amorphous Silicon Nitride ◽  
Full Characterization ◽  
Silicon Nitride Films ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon nitride films, prepared in various commercially available plasma enhanced chemical vapor deposition systems, have been investigated in terms of different deposition conditions.The full characterization of these gate insulators has been carried out by different techniques.Experimental data and interesting findings obtained from this study are presented.Special attention has been devoted to the influence of hydrogen on optical and electrical properties.

Effect of the hydrogen content in the optical properties and etching of silicon nitride films deposited by PECVD for uncooled microbolometers

2005 ◽  
Vol 862 ◽  
Author(s):  
R. Ambrosio ◽  
A. Torres ◽  
A. Kosarev ◽  
M. Landa ◽  
A. Heredia
Keyword(s):  
Hydrogen Bonding ◽  
Silicon Nitride ◽  
Hydrogen Content ◽  
Etch Rate ◽  
Low Frequency ◽  
Chemical Vapor ◽  
Silicon Nitride Films ◽  
Pressure Chemical ◽  
Quantitative Results ◽  
Deposited Films

AbstractWe have studied silicon nitride films a-SiN:H deposited at a substrate temperature of 350°C by means of the Low frequency (LF) PECVD from silane and nitrogen as stock gases. Film properties as hydrogen bonding and content, nitrogen content, refractive index and etch rate are reported and analyzed. Our deposited films show physical properties similar to those that are obtained deposition temperatures of 700°C by the low pressure chemical vapor deposition (LPCVD) technique. An investigation of bonding structures for the deposited films was performed, and quantitative results for hydrogen bonding based on Fourier Transform Infrared (FTIR) analysis are presented. It was observed that low hydrogen content in the films is in good correlation with low etch rate in 10% buffered HF solution, therefore these films present a material with good etch selectivity in respect to others materials (as phosphosilicate glass PSG, Al etc). Selectivity which makes these films very promising in surface micromachining for fabrication of sensors and device structures, e.g. microbolometers. Additionally, the Si-N bond at 830-840cm-1was analyzed because of its big absorption produced at 12μm; therefore these films can be used as absorber layers in uncooled microbolometres.

Photoluminescence Properties of Silicon Nitride Prepared by VHF-PECVD

2012 ◽  
Vol 531-532 ◽  
pp. 392-395
Author(s):  
Jie Song ◽  
Yan Qing Guo ◽  
Chao Song ◽  
Xiang Wang
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Light Emission ◽  
Chemical Vapor ◽  
Very High Frequency ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films ◽  
High Frequency Plasma ◽  
Vapor Deposition Technique ◽  
Silicon Based

Since the visible photoluminescence (PL) in porous Si was observed by Canham, much attention has been paid to the light emission from silicon-based materials. In this work, luminescent amorphous silicon nitride films were prepared by very-high-frequency plasma enhanced chemical vapor deposition technique using ammonia, silane and hydrogen as source gases at a low temperature of 50 °C. It is found that the films exhibit strong visible light emissions with ranging from green to red region. Photoluminescence spectra show that the emission peaks as well as intensity strongly depends on the flow rates of ammonia. Combining with the analyses of Fourier transform infrared absorption spectra and the transmission spectra, it is suggested that the light emissions are originated from the radiative recombination in the band-tail states of amorphous silicon nitride.

High Hydrogen Content Silicon Nitride For Photovoltaic Applications Deposited By Hot-Wire Chemical Vapor Deposition

2002 ◽  
Vol 715 ◽  
Author(s):  
Jason K. Holt ◽  
Maribeth Swiatek ◽  
David G. Goodwin ◽  
Harry A. Atwater ◽  
Thomas J. Watson
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Flow Ratio ◽  
Hot Wire ◽  
Film Properties ◽  
High Hydrogen ◽  
Silicon Nitride Films ◽  
Photovoltaic Applications

AbstractSilicon nitride films have been grown by hot-wire chemical vapor deposition and film properties have been characterized as a function of SiH4/NH3 flow ratio. Quadrupole mass spectrometry measurements revealed that NH3 should be present in large excess relative to SiH4 (<10), due to its lower decomposition probability on the wire. Silicon nitride films were produced with refractive indices ranging from 1.8-2.5 and H-content from 9-18 atomic % as the flow ratio increased from 1% to 8%. Fourier Transform Infrared Spectroscopy revealed a change from predominantly N-H to Si-H bonding as the flow ratio increases beyond 6%. Subsequent annealing studies showed different kinetics for H release from Si versus N. Films grown with a low SiH4/NH3 ratio were found to oxidize readily (23 atomic %), while larger ratios yielded no oxygen incorporation.

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

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