Adsorption of Moisture and Organic Contaminants on Hafnium Oxide, Zirconium Oxide, and Silicon Oxide Gate Dielectrics

2003 ◽  
Vol 150 (10) ◽  
pp. F186 ◽  
Author(s):  
Prashant Raghu ◽  
Niraj Rana ◽  
Chris Yim ◽  
Eric Shero ◽  
Farhang Shadman
Keyword(s):  
Organic Contaminants ◽  
Zirconium Oxide ◽  
Hafnium Oxide ◽  
Silicon Oxide ◽  
Gate Dielectrics

Hydrogen passivation of silicon/silicon oxide interface by atomic layer deposited hafnium oxide and impact of silicon oxide underlayer

2018 ◽  
Vol 36 (1) ◽  
pp. 01A116 ◽  
Author(s):  
Evan Oudot ◽  
Mickael Gros-Jean ◽  
Kristell Courouble ◽  
Francois Bertin ◽  
Romain Duru ◽  
...  
Keyword(s):  
Hafnium Oxide ◽  
Silicon Oxide ◽  
Atomic Layer ◽  
Hydrogen Passivation ◽  
Oxide Interface ◽  
Silicon Silicon

Etching of Zirconium Oxide, Hafnium Oxide, and Hafnium Silicates in Dilute Hydrofluoric Acid Solutions

2004 ◽  
Vol 19 (4) ◽  
pp. 1149-1156 ◽  
Author(s):  
Viral Lowalekar ◽  
Srini Raghavan
Keyword(s):  
Hydrofluoric Acid ◽  
Zirconium Oxide ◽  
Hafnium Oxide ◽  
High Dielectric Constant ◽  
Chemical Vapor ◽  
Oxide Thickness ◽  
Heat Treated ◽  
Paper Work ◽  
High Dielectric ◽  
Work Done

Oxides and silicates of zirconium and hafnium are actively being considered and tested to replace SiO2 as the gate material. Though these materials have the high-dielectric constant (k ∼ 20–25) needed to provide a larger equivalent oxide thickness, they are very refractory and difficult to etch by wet and dry methods. In this paper, work done on wet etching of ZrO2, HfO2, and HfSixOy in dilute hydrofluoric acid (HF) solutions is presented and discussed. Experiments were done on various high-k films deposited by metalorganic chemical vapor deposition. It was found that the as-deposited high-k films can be dissolved with a good selectivity over SiO2 in dilute HF solutions, but heat-treated high-k films are difficult to etch with good selectivity over SiO2 under the same conditions.

High-Mobility ZnO Thin Film Transistors Based on Solution-processed Hafnium Oxide Gate Dielectrics

2014 ◽  
Vol 25 (1) ◽  
pp. 134-141 ◽  
Author(s):  
Mazran Esro ◽  
George Vourlias ◽  
Christopher Somerton ◽  
William I. Milne ◽  
George Adamopoulos
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Hafnium Oxide ◽  
Gate Dielectrics ◽  
High Mobility ◽  
Zno Thin Film ◽  
Solution Processed

Preparation of Continuous Aluminum Oxide Fibers with Silicon Oxide and Zirconium Oxide Additives

2020 ◽  
Vol 51 (6) ◽  
pp. 430-436
Author(s):  
N. M. Varrik ◽  
A. M. Zimichek ◽  
A. V. Sumin ◽  
O. N. Samorodova
Keyword(s):  
Aluminum Oxide ◽  
Zirconium Oxide ◽  
Silicon Oxide
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