Hydrogen passivation of silicon/silicon oxide interface by atomic layer deposited hafnium oxide and impact of silicon oxide underlayer

2018 ◽  
Vol 36 (1) ◽  
pp. 01A116 ◽  
Author(s):  
Evan Oudot ◽  
Mickael Gros-Jean ◽  
Kristell Courouble ◽  
Francois Bertin ◽  
Romain Duru ◽  
...  
Keyword(s):  
Hafnium Oxide ◽  
Silicon Oxide ◽  
Atomic Layer ◽  
Hydrogen Passivation ◽  
Oxide Interface ◽  
Silicon Silicon

Nitrogen Implantation and Diffusion in Silicon

1999 ◽  
Vol 568 ◽  
Author(s):  
Lahir Shaik Adam ◽  
Mark E. Law ◽  
Omer Dokumaci ◽  
Yaser Haddara ◽  
Cheruvu Murthy ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Gate Oxide ◽  
Nitrogen Diffusion ◽  
Nitrogen Implantation ◽  
Oxide Interface ◽  
Diffusion Behavior ◽  
Czochralski Silicon ◽  
Interface Modeling ◽  
And Diffusion ◽  
Silicon Silicon

ABSTRACTNitrogen implantation can be used to control gate oxide thicknesses [1,2]. This study aims at studying the fundamental behavior of nitrogen diffusion in silicon. Nitrogen at sub-amorphizing doses has been implanted as N2+ at 40 keV and 200 keV into Czochralski silicon wafers. Furnace anneals have been performed at a range of temperatures from 650°C through 1050°C. The resulting annealed profiles show anomalous diffusion behavior. For the 40 keV implants, nitrogen diffuses very rapidly and segregates at the silicon/ silicon-oxide interface. Modeling of this behavior is based on the theory that the diffusion is limited by the time to create a mobile nitrogen interstitial.

A New Model Silicon/Silicon Oxide Interface Synthesized fromH10Si10O15andSi(100)-2×1

1997 ◽  
Vol 36 (Part 1, No. 3B) ◽  
pp. 1622-1626 ◽  
Author(s):  
K. Z. Zhang ◽  
Leah M. Meeuwenberg ◽  
Mark M. Banaszak Holl ◽  
F. R. McFeely
Keyword(s):  
Silicon Oxide ◽  
Oxide Interface ◽  
New Model ◽  
Silicon Silicon

scholarly journals Probing the silicon-silicon oxide interface of Si(111)SiO2Cr MOS structures by DC-electric-field-induced second harmonic generation

1996 ◽  
Vol 352-354 ◽  
pp. 1033-1037 ◽  
Author(s):  
O.A. Aktsipetrov ◽  
A.A. Fedyanin ◽  
E.D. Mishina ◽  
A.N. Rubtsov ◽  
C.W. van Hasselt ◽  
...  
Keyword(s):  
Electric Field ◽  
Second Harmonic Generation ◽  
Harmonic Generation ◽  
Silicon Oxide ◽  
Second Harmonic ◽  
Oxide Interface ◽  
Dc Electric Field ◽  
Mos Structures ◽  
Silicon Silicon

Contamination Control of Polysilicon Gates in a Vertical Reactor Cluster Tool

1993 ◽  
Vol 36 (3) ◽  
pp. 33-36
Author(s):  
C. Werkhoven ◽  
E. Granneman ◽  
E. Lindow ◽  
R. de Blank ◽  
S. Verhavcrbeke ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Native Oxide ◽  
Oxide Interface ◽  
Organic Contamination ◽  
Contamination Control ◽  
Defect Control ◽  
Leak Tightness ◽  
Oxide Removal ◽  
Silicon Silicon ◽  
Cluster Tool

This paper demonstrates that defect control is greatly improved when using the protected environment of a vertical reactor cluster tool comprising a preclean station. The cluster tool investigated combines the established process stability of vertical reactors with new capabilities as native oxide removal, ultraclean wafer transport, and reactors shielded from enviromental contamination. An adequate combination of clean gas usage and leak tightness makes it possible to apply HF vapor etching effectively in order to control the properties of the silicon-silicon oxide interface. For different precleaning conditions, interface and bulk contamination was measured, the sources identified, and the effect of improvements monitored. To this end, several electrical parameters were determined, including the analysis of Qhd and Ehd. Quantitative TXRF and SIMS techniques were used to correlate the results with metallic and organic contamination.

Direct inversion of interfacial reflectivity data using the Patterson function

2003 ◽  
Vol 36 (6) ◽  
pp. 1352-1355 ◽  
Author(s):  
Benoît Bataillou ◽  
Hubert Moriceau ◽  
François Rieutord
Keyword(s):  
Silicon Oxide ◽  
Model Fitting ◽  
Phase Problem ◽  
Oxide Interface ◽  
X Ray ◽  
Patterson Function ◽  
Direct Inversion ◽  
Scattering Technique ◽  
Reflectivity Data ◽  
Silicon Silicon

It is shown here that the interfacial profile between two bonded wafers can be directly determined using X-ray reflectivity without resorting to standard model-fitting of the data. The phase problem inherent to any structure determination by scattering technique is solved in this case using a known silicon/silicon oxide interface, which acts as a phase reference for the reflected signals.

Effect of Oxidizer on Chemical Vapor Deposited Hafnium Oxide-Based Nanostructures and the Engineering of their Interfaces with Si(100)

2007 ◽  
Vol 996 ◽  
Author(s):  
Manish K. Singh ◽  
Rajesh Katamreddy ◽  
Christos G. Takoudis
Keyword(s):  
Photoelectron Spectroscopy ◽  
Hafnium Oxide ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Oxygen Mixture ◽  
Silicon Substrates ◽  
Cold Wall ◽  
Mocvd Reactor ◽  
Layer Deposition

AbstractThin films of hafnium oxide were deposited on silicon substrates using tetrakis-diethylamino hafnium as precursor. Two different oxidizers: (a) ozone/oxygen mixture, and (b) dry oxygen were used for comparative study of the effect of different oxidizers on the deposited films. The deposition using dry oxygen was carried out in a cold-wall rapid thermal processing metalorganic chemical vapor deposition (MOCVD) reactor, whereas ozone/oxygen mixture was used in a cold-wall atomic layer deposition (ALD) reactor. Annealing studies were carried out at 600 and 800°C in high-purity argon at atmospheric pressure. X-ray photoelectron spectroscopy (XPS) analyses of as-deposited and annealed films were performed to study the HfO2/Si interface. The films deposited using these two different oxidizers appeared to be of comparable quality. Silicon oxide formation at the interface occurred after annealing at 600°C and it increased upon further annealing at 800 °C.

First-Principles Study Of Photoluminescence From Silicon/Silicon-Oxide Interfaces

1997 ◽  
Vol 486 ◽  
Author(s):  
H. Kageshima ◽  
K. Shiraishi
Keyword(s):  
First Principles ◽  
Silicon Oxide ◽  
Lone Pair ◽  
Wave Functions ◽  
First Principles Calculation ◽  
Oxide Interface ◽  
Nano Structures ◽  
Strong Localization ◽  
Localized Excitons ◽  
Silicon Silicon

AbstractExperimentally reported interfacial luminescence from silicon nano structures are studied by using a first-principles calculation of a Si(100) quantum slab covered with silicon oxide. When Si-OH bonds were introduced at the silicon/silicon-oxide interface, wave functions at the valence band top and near conduction band bottom localized vertically and laterally near the Si-OH bonds. Such strong localization is the result of the cooperation of the coupling of non-bonding 2p lone pair orbitals on interfacial 0 atoms and the strong dipole of OH. Furthermore, the localization is significant only in silicon nano structures. This localization of the wave functions can be the source for creating localized excitons, which can dramatically enhance the intensity of photoluminescence. Therefore, interfacial Si-OH bonds are a theoretically convincing possible source of reported interfacial luminescence.

scholarly journals Blue Light Total Dose Nonvolatile Sensor Using Al-SOHOS Capacitor Device

Proceedings ◽  
2018 ◽  
Vol 4 (1) ◽  
pp. 45
Author(s):  
Wen-Ching Hsieh
Keyword(s):  
Total Dose ◽  
Blue Light ◽  
Hafnium Oxide ◽  
Silicon Oxide ◽  
Positive Bias ◽  
Bias Stress ◽  
Retention Loss ◽  
Doped Silicon ◽  
Radiation Induced ◽  
Silicon Silicon

The Al doped silicon–silicon oxide–hafnium oxide–silicon oxide–silicon capacitor device (Al-SOHOS) could be a candidate for blue light (BL) radiation total dose (TD) nonvolatile sensor. The BL radiation induces a significant increase in the threshold voltage VT of the Al-SOHOS capacitor, with the change in VT of the Al-SOHOS capacitor also having a correlation to BL TD. The experimental results indicate that the BL radiation-induced increase in VT of the Al-SOHOS capacitor under 10-V gate positive bias stress (PVS) is nearly 2 V after a BL TD of 100 mW·s/cm2 irradiation. Moreover, the VT retention loss of the nonvolatile Al-SOHOS capacitor device after 10 years of retention is below 15%. The BL TD data can be permanently stored and accumulated in the non-volatile Al-SOHOS capacitor device. The Al-SOHOS capacitor device in this study has demonstrated the feasibility of non-volatile BL TD radiation sensing.

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