Inelastic electron tunneling study of crystallization effects and defect energies in hafnium oxide gate dielectrics

2011 ◽  
Vol 98 (3) ◽  
pp. 032108 ◽  
Author(s):  
Eun Ji Kim ◽  
Michael Shandalov ◽  
Krishna C. Saraswat ◽  
Paul C. McIntyre
2010 ◽  
Vol 22 (26-27) ◽  
pp. 2962-2968 ◽  
Author(s):  
James W. Reiner ◽  
Sharon Cui ◽  
Zuoguang Liu ◽  
Miaomiao Wang ◽  
Charles H. Ahn ◽  
...  

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