Etching of Zirconium Oxide, Hafnium Oxide, and Hafnium Silicates in Dilute Hydrofluoric Acid Solutions

2004 ◽  
Vol 19 (4) ◽  
pp. 1149-1156 ◽  
Author(s):  
Viral Lowalekar ◽  
Srini Raghavan
Keyword(s):  
Hydrofluoric Acid ◽  
Zirconium Oxide ◽  
Hafnium Oxide ◽  
High Dielectric Constant ◽  
Chemical Vapor ◽  
Oxide Thickness ◽  
Heat Treated ◽  
Paper Work ◽  
High Dielectric ◽  
Work Done

Oxides and silicates of zirconium and hafnium are actively being considered and tested to replace SiO2 as the gate material. Though these materials have the high-dielectric constant (k ∼ 20–25) needed to provide a larger equivalent oxide thickness, they are very refractory and difficult to etch by wet and dry methods. In this paper, work done on wet etching of ZrO2, HfO2, and HfSixOy in dilute hydrofluoric acid (HF) solutions is presented and discussed. Experiments were done on various high-k films deposited by metalorganic chemical vapor deposition. It was found that the as-deposited high-k films can be dissolved with a good selectivity over SiO2 in dilute HF solutions, but heat-treated high-k films are difficult to etch with good selectivity over SiO2 under the same conditions.

Flexible and Transparent Dielectric Film with a High Dielectric Constant Using Chemical Vapor Deposition-Grown Graphene Interlayer

ACS Nano ◽  
2013 ◽  
Vol 8 (1) ◽  
pp. 269-274 ◽  
Author(s):  
Jin-Young Kim ◽  
Jongho Lee ◽  
Wi Hyoung Lee ◽  
Iskandar N. Kholmanov ◽  
Ji Won Suk ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Dielectric Constant ◽  
Dielectric Film ◽  
Chemical Vapor ◽  
Transparent Dielectric ◽  
Grown Graphene ◽  
High Dielectric

Fabrication and Characterization of Metal-Ferroelectric-Gan Structures

1999 ◽  
Vol 595 ◽  
Author(s):  
W.P. Li ◽  
R. Zhang ◽  
J. Yin ◽  
X.H. Liu ◽  
Y.G. Zhou ◽  
...  
Keyword(s):  
High Frequency ◽  
High Dielectric Constant ◽  
Oxide Thickness ◽  
X Ray Diffraction ◽  
X Ray ◽  
Active Layers ◽  
Pzt Films ◽  
High Dielectric ◽  
Mos Structures

AbstractGaN-based metal-ferroelectric-semiconductor (MFS) structure has been fabricated by using ferroelectric Pb(Zr0.53Ti0.47)O3 (PZT) instead of conventional oxides as gate insulators. The GaN and PZT films in the MFS structures have been characterized by various methods such as photoluminescence (PL), wide-angle X-ray diffraction (XRD) and high-resolution X-ray diffraction (HRXRD). The Electric properties of GaN MFS structure with different oxide thickness have been characterized by high-frequency C-V measurement. When the PZT films are as thick as 1 µm, the GaN active layers can approach inversion under the bias of 15V, which can not be observed in the traditional GaN MOS structures. When the PZT films are about 100 nm, the MFS structures can approach inversion just under 5V. All the marked improvements of C-V behaviors in GaN MFS structures are mainly attributed to the high dielectric constant and large polarization of the ferroelectric gate oxide.

High-density remote plasma sputtering of high-dielectric-constant amorphous hafnium oxide films

2013 ◽  
Vol 250 (5) ◽  
pp. 957-967 ◽  
Author(s):  
Flora M. Li ◽  
Bernhard C. Bayer ◽  
Stephan Hofmann ◽  
Stuart P. Speakman ◽  
Caterina Ducati ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Hafnium Oxide ◽  
High Dielectric Constant ◽  
Oxide Films ◽  
High Density ◽  
Remote Plasma ◽  
Plasma Sputtering ◽  
High Dielectric

scholarly journals Solution-processed amorphous ZrO2 gate dielectric films synthesized by a non-hydrolytic sol–gel route

RSC Advances ◽  
2018 ◽  
Vol 8 (68) ◽  
pp. 39115-39119 ◽  
Author(s):  
Jong-Baek Seon ◽  
Nam-Kwang Cho ◽  
Gayeong Yoo ◽  
Youn Sang Kim ◽  
Kookheon Char
Keyword(s):  
Dielectric Constant ◽  
Zirconium Oxide ◽  
High Dielectric Constant ◽  
Gate Dielectric ◽  
Sol Gel ◽  
High Mobility ◽  
Dielectric Films ◽  
Solution Processed ◽  
High Dielectric ◽  
P Type

Solution-processed amorphous zirconium oxide (ZrO2) dielectrics were formed via a non-hydrolytic sol–gel route at low-temperature. The ZrO2 films exhibited a high dielectric constant and high mobility p-type pentacene TFTs were fabricated using them.

High dielectric constant and low loss of polymeric dielectric composites filled by carbon nanotubes adhering BaTiO3 hybrid particles

RSC Advances ◽  
2015 ◽  
Vol 5 (37) ◽  
pp. 29017-29021 ◽  
Author(s):  
Z. D. Liu ◽  
Y. Feng ◽  
W. L. Li
Keyword(s):  
Carbon Nanotubes ◽  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Polymer Composites ◽  
Vapor Deposition ◽  
High Dielectric Constant ◽  
Chemical Vapor ◽  
Hybrid Particles ◽  
Low Loss ◽  
High Dielectric

We reported the preparation of carbon nanotubes adhering BaTiO3 nanoparticles (BT@CNTs) via chemical vapor deposition (CVD) and the method to obtain the polymer composites with high dielectric constant and low loss.

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