Technique for Large Elevation of Source/Drain Using Implantation Mediated Selective Etching

2003 ◽  
Vol 6 (10) ◽  
pp. G117 ◽  
Author(s):  
M. Q. Huda ◽  
K. Sakamoto ◽  
H. Tanoue
Keyword(s):  
Selective Etching

In Situ microscopy of the anodic etching of silicon

1995 ◽  
Vol 53 ◽  
pp. 232-233
Author(s):  
Frances M. Ross ◽  
Peter C. Searson
Keyword(s):  
Composite Structures ◽  
High Surface ◽  
High Surface Area ◽  
Chemical Properties ◽  
Selective Etching ◽  
Silicon On Insulator ◽  
Second Phase ◽  
Porous Layers ◽  
New Class ◽  
Porous Semiconductors

Porous semiconductors represent a relatively new class of materials formed by the selective etching of a single or polycrystalline substrate. Although porous silicon has received considerable attention due to its novel optical properties1, porous layers can be formed in other semiconductors such as GaAs and GaP. These materials are characterised by very high surface area and by electrical, optical and chemical properties that may differ considerably from bulk. The properties depend on the pore morphology, which can be controlled by adjusting the processing conditions and the dopant concentration. A number of novel structures can be fabricated using selective etching. For example, self-supporting membranes can be made by growing pores through a wafer, films with modulated pore structure can be fabricated by varying the applied potential during growth, composite structures can be prepared by depositing a second phase into the pores and silicon-on-insulator structures can be formed by oxidising a buried porous layer. In all these applications the ability to grow nanostructures controllably is critical.

Fabrication of Antiswelling Loose Nanofiltration Membranes via a “Selective-Etching-Induced Reinforcing” Strategy for Bioseparation

2021 ◽  
Vol 13 (16) ◽  
pp. 19312-19323
Author(s):  
Shiwei Guo ◽  
Huiru Zhang ◽  
Xiangrong Chen ◽  
Shichao Feng ◽  
Yinhua Wan ◽  
...  
Keyword(s):  
Selective Etching ◽  
Nanofiltration Membranes

Comparison Between Three Si1-xGex versus Si Selective Etching Processes

2019 ◽  
Vol 16 (10) ◽  
pp. 439-449 ◽  
Author(s):  
Thierry Salvetat ◽  
Vincent Destefanis ◽  
Stephan Borel ◽  
Jean-Michel Hartmann ◽  
Olivier Kermarrec ◽  
...  
Keyword(s):  
Selective Etching

scholarly journals Effect of input power and gas pressure on the roughening and selective etching of SiO2/Si surfaces in reactive plasmas

2010 ◽  
Vol 17 (9) ◽  
pp. 094501 ◽  
Author(s):  
X. X. Zhong ◽  
E. Tam ◽  
X. Z. Huang ◽  
P. Colpo ◽  
F. Rossi ◽  
...  
Keyword(s):  
Input Power ◽  
Selective Etching ◽  
Gas Pressure

Preparation of fluorescent mesoporous hollow silica–fullerene nanoparticles via selective etching for combined chemotherapy and photodynamic therapy

Nanoscale ◽  
2015 ◽  
Vol 7 (28) ◽  
pp. 11894-11898 ◽  
Author(s):  
Yannan Yang ◽  
Meihua Yu ◽  
Hao Song ◽  
Yue Wang ◽  
Chengzhong Yu
Keyword(s):  
Photodynamic Therapy ◽  
Selective Etching ◽  
Particle Sizes ◽  
Combined Chemotherapy ◽  
Excellent Performance ◽  
Hollow Silica ◽  
Fullerene Nanoparticles

Fluorescent mesoporous hollow silica–fullerene nanoparticles with particle sizes of ∼50 nm have been successfully prepared, showing excellent performance in combined chemo-photodynamic therapy.

scholarly journals Realization of Ultraflat Plastic Film Using Dressed-Photon-Phonon-Assisted Selective Etching of Nanoscale Structures

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Takashi Yatsui ◽  
Wataru Nomura ◽  
Motoichi Ohtsu
Keyword(s):  
Continuous Wave ◽  
Wavelength Dependence ◽  
Selective Etching ◽  
Pmma Substrate ◽  
Height Difference ◽  
Nanoscale Structures ◽  
Photochemical Etching ◽  
Atomic Force ◽  
Difference Function ◽  
Scale Structures

We compared dressed-photon-phonon (DPP) etching to conventional photochemical etching and, using a numerical analysis of topographic images of the resultant etched polymethyl methacrylate (PMMA) substrate, we determined that the DPP etching resulted in the selective etching of smaller scale structures in comparison with the conventional photochemical etching. We investigated the wavelength dependence of the PMMA substrate etching using an O2 gas. As the dissociation energy of O2 is 5.12 eV, we applied a continuous-wave (CW) He-Cd laser (λ= 325 nm, 3.81 eV) for the DPP etching and a 5th-harmonic Nd:YAG laser (λ= 213 nm, 5.82 eV) for the conventional photochemical etching. From the obtained atomic force microscope images, we confirmed a reduction in surface roughness, Ra, in both cases. However, based on calculations involving the standard deviation of the height difference function, we confirmed that the conventional photochemical etching method etched the larger scale structures only, while the DPP etching process selectively etched the smaller scale features.

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