Silicon oxide selective etching process keeping harmony with environment by using radical injection technique

1999 ◽  
Vol 17 (6) ◽  
pp. 3260-3264 ◽  
Author(s):  
Kazushi Fujita ◽  
Masafumi Ito ◽  
Masaru Hori ◽  
Toshio Goto
2002 ◽  
Vol 91 (5) ◽  
pp. 3452-3458 ◽  
Author(s):  
Masafumi Ito ◽  
Kiyoshi Kamiya ◽  
Masaru Hori ◽  
Toshio Goto

2021 ◽  
Vol 255 ◽  
pp. 10003
Author(s):  
Kore Hasse ◽  
Detlef Kip ◽  
Christian Kränkel

We investigated fs-laser structuring of YAG crystals at high writing velocities up to 100 mm/s using a commercial 10 MHz fs-laser system supplied by Coherent Inc. and selective etching of these structures for fabrication of ultrahigh aspect ratio microchannels. Usage of a diluted acid mixture of 22% H3PO4 and 24% H2SO4 accelerated the etching process significantly to an etching parameter D of 11.2 μm2/s, which is three times higher than previously reported. Additionally, the selectivity of the etching process was increased by an order of magnitude.


2012 ◽  
Vol 2 (4) ◽  
pp. 410-414
Author(s):  
Fei Liu ◽  
Xin Zhang ◽  
Dongfeng Xue

2017 ◽  
Vol 124 ◽  
pp. 435-440 ◽  
Author(s):  
Dominic Tetzlaff ◽  
Marvin Dzinnik ◽  
Jan Krügener ◽  
Yevgeniya Larionova ◽  
Sina Reiter ◽  
...  

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