Residual Crystalline Silicon Phase in Silicon-Rich-Oxide Films Subjected to High Temperature Annealing

2002 ◽  
Vol 149 (7) ◽  
pp. G376 ◽  
Author(s):  
B. Fazio ◽  
M. Vulpio ◽  
C. Gerardi ◽  
Y. Liao ◽  
I. Crupi ◽  
...  
Keyword(s):  
High Temperature ◽  
Crystalline Silicon ◽  
Oxide Films ◽  
High Temperature Annealing ◽  
Silicon Phase

Modeling the splitting of thin silicon films from porosified crystalline silicon upon high temperature annealing in hydrogen

2012 ◽  
Vol 9 (10-11) ◽  
pp. 2194-2197 ◽  
Author(s):  
Moustafa Y. Ghannam ◽  
Yaser Abdul Raheem ◽  
Abdul Azeez Alomar ◽  
Jef Poortmans
Keyword(s):  
High Temperature ◽  
Crystalline Silicon ◽  
Silicon Films ◽  
High Temperature Annealing ◽  
Thin Silicon

Effect of High-temperature Annealing on Evaporated Silicon Oxide Films: A Spectroscopic Ellipsometry Study

2019 ◽  
Vol 25 (3) ◽  
pp. 379-384
Author(s):  
Anna Szekeres ◽  
Emilia Vlaikova ◽  
Tivadar Lohner ◽  
Peter Petrik ◽  
Agnes Cziraki ◽  
...  
Keyword(s):  
High Temperature ◽  
Spectroscopic Ellipsometry ◽  
Silicon Oxide ◽  
Oxide Films ◽  
High Temperature Annealing

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

Formation of Nanocrystalline Silicon in Tin-Doped Amorphous Silicon Films

2020 ◽  
Vol 65 (3) ◽  
pp. 236
Author(s):  
R. M. Rudenko ◽  
O. O. Voitsihovska ◽  
V. V. Voitovych ◽  
M. M. Kras’ko ◽  
A. G. Kolosyuk ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Nanocrystalline Silicon ◽  
Recrystallization Temperature ◽  
Nanocrystalline Phase ◽  
Silicon Phase ◽  
Silicon Nanocrystallites ◽  
Lower Temperature ◽  
Two Stages

The process of crystalline silicon phase formation in tin-doped amorphous silicon (a-SiSn) films has been studied. The inclusions of metallic tin are shown to play a key role in the crystallization of researched a-SiSn specimens with Sn contents of 1–10 at% at temperatures of 300–500 ∘C. The crystallization process can conditionally be divided into two stages. At the first stage, the formation of metallic tin inclusions occurs in the bulk of as-precipitated films owing to the diffusion of tin atoms in the amorphous silicon matrix. At the second stage, the formation of the nanocrystalline phase of silicon occurs as a result of the motion of silicon atoms from the amorphous phase to the crystalline one through the formed metallic tin inclusions. The presence of the latter ensures the formation of silicon crystallites at a much lower temperature than the solid-phase recrystallization temperature (about 750 ∘C). A possibility for a relation to exist between the sizes of growing silicon nanocrystallites and metallic tin inclusions favoring the formation of nanocrystallites has been analyzed.

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