Modeling the splitting of thin silicon films from porosified crystalline silicon upon high temperature annealing in hydrogen

2012 ◽  
Vol 9 (10-11) ◽  
pp. 2194-2197 ◽  
Author(s):  
Moustafa Y. Ghannam ◽  
Yaser Abdul Raheem ◽  
Abdul Azeez Alomar ◽  
Jef Poortmans
Keyword(s):  
High Temperature ◽  
Crystalline Silicon ◽  
Silicon Films ◽  
High Temperature Annealing ◽  
Thin Silicon

scholarly journals Surface passivation of crystalline silicon by Cat-CVD amorphous and nanocrystalline thin silicon films

2003 ◽  
Vol 430 (1-2) ◽  
pp. 270-273 ◽  
Author(s):  
C. Voz ◽  
I. Martin ◽  
A. Orpella ◽  
J. Puigdollers ◽  
M. Vetter ◽  
...  
Keyword(s):  
Surface Passivation ◽  
Crystalline Silicon ◽  
Silicon Films ◽  
Thin Silicon

Leakage Currents through Thin Silicon Oxide Grown on Atomically Flat Silicon Surfaces

2004 ◽  
Vol 849 ◽  
Author(s):  
Valerian Ignatescu ◽  
Jack M. Blakely
Keyword(s):  
High Temperature ◽  
Leakage Current ◽  
Silicon Oxide ◽  
Silicon Surfaces ◽  
High Temperature Annealing ◽  
Chemical Cleaning ◽  
Flat Surfaces ◽  
Stepped Surfaces ◽  
Thin Silicon ◽  
Atomically Flat

ABSTRACTAtomically flat surfaces can be obtained by high-temperature annealing in UHV of specially patterned silicon samples. Thin silicon oxide layers were grown by dry oxidation on three types of surfaces: (a) atomically flat surfaces, (b) normal (stepped) surfaces cleaned in UHV by the same high-temperature annealing and (c) normal wafer surfaces, which underwent just an RCA chemical cleaning before oxidation. Atomic force microscopy (AFM) was performed to reveal the topography of the surfaces. Aluminum pads were deposited on these oxidized surfaces using photolithography techniques. The leakage current through the oxide was measured for all three cases. Our results show that the smoother the surface before oxidation, the smaller the leakage current.

Residual Crystalline Silicon Phase in Silicon-Rich-Oxide Films Subjected to High Temperature Annealing

2002 ◽  
Vol 149 (7) ◽  
pp. G376 ◽  
Author(s):  
B. Fazio ◽  
M. Vulpio ◽  
C. Gerardi ◽  
Y. Liao ◽  
I. Crupi ◽  
...  
Keyword(s):  
High Temperature ◽  
Crystalline Silicon ◽  
Oxide Films ◽  
High Temperature Annealing ◽  
Silicon Phase

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

Lifetime Regime in the Electrically-Detected Transient Grating Method Applied to Amorphous and Microcrystalline Silicon Films

2002 ◽  
Vol 715 ◽  
Author(s):  
P. Sanguino ◽  
M. Niehus ◽  
S. Koynov ◽  
P. Brogueira ◽  
R. Schwarz ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Analytical Calculation ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Dielectric Relaxation Time ◽  
Transient Grating ◽  
Minority Carrier Diffusion Length ◽  
Carrier Recombination ◽  
Thin Silicon ◽  
Good Agreement

AbstractThe minority-carrier diffusion length in thin silicon films can be extracted from the electrically-detected transient grating method, EDTG, by a simple ambipolar analysis only in the case of lifetime dominated carrier transport. If the dielectric relaxation time, τdiel, is larger than the photocarrier response time, τR, then unexpected negative transient signals can appear in the EDTG result. Thin silicon films deposited by hot-wire chemical vapor deposition (HWCVD) near the amorphous-to-microcrystalline transition, where τR varies over a large range, appeared to be ideal candidates to study the interplay between carrier recombination and dielectric response. By modifying the ambipolar description to allow for a time-dependent carrier grating build-up and decay we can obtain a good agreement between analytical calculation and experimental results.

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