Role of oxygen migration in the kinetics of the phase separation of nonstoichiometric silicon oxide films during high-temperature annealing

2007 ◽  
Vol 91 (13) ◽  
pp. 133109 ◽  
Author(s):  
A. Sarikov ◽  
V. Litovchenko ◽  
I. Lisovskyy ◽  
I. Maidanchuk ◽  
S. Zlobin
Keyword(s):  
Phase Separation ◽  
High Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
High Temperature Annealing ◽  
Oxygen Migration ◽  
Kinetics Of

Role of the internal strain on the incomplete Si∕SiO2 phase separation in substoichiometric silicon oxide films

2007 ◽  
Vol 90 (18) ◽  
pp. 183101 ◽  
Author(s):  
A. La Magna ◽  
G. Nicotra ◽  
C. Bongiorno ◽  
C. Spinella ◽  
M. G. Grimaldi ◽  
...  
Keyword(s):  
Phase Separation ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Internal Strain ◽  
Sio2 Phase

Effect of High-temperature Annealing on Evaporated Silicon Oxide Films: A Spectroscopic Ellipsometry Study

2019 ◽  
Vol 25 (3) ◽  
pp. 379-384
Author(s):  
Anna Szekeres ◽  
Emilia Vlaikova ◽  
Tivadar Lohner ◽  
Peter Petrik ◽  
Agnes Cziraki ◽  
...  
Keyword(s):  
High Temperature ◽  
Spectroscopic Ellipsometry ◽  
Silicon Oxide ◽  
Oxide Films ◽  
High Temperature Annealing

Features of Phase Separation Kinetics of Solid 3He-4He Mixtures. Role of Boundary Resistance

2005 ◽  
Vol 138 (3-4) ◽  
pp. 823-828
Author(s):  
N. Mikhin ◽  
V. Grigor’ev ◽  
V. Maidanov ◽  
A. Penzev ◽  
S. Rubets ◽  
...  
Keyword(s):  
Phase Separation ◽  
Boundary Resistance ◽  
Phase Separation Kinetics ◽  
Kinetics Of ◽  
Separation Kinetics ◽  
Solid 3He

The role of silane and N2O in the CO2 laser-CVD of silicon oxide films

1993 ◽  
Vol 69 (1-4) ◽  
pp. 281-284
Author(s):  
D. Fernández ◽  
P. González ◽  
J. Pou ◽  
E. García ◽  
J. Serra ◽  
...  
Keyword(s):  
Co2 Laser ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Laser Cvd

High Temperature Annealing of Simox Layers Physical Mechanisms of Oxygen Segregation

1988 ◽  
Vol 100 ◽  
Author(s):  
C. Jaussaud ◽  
J. Margail ◽  
J. Stoemenos ◽  
M. Bruel
Keyword(s):  
Heat Treatment ◽  
High Temperature ◽  
Concentration Profile ◽  
Point Of View ◽  
High Temperature Annealing ◽  
Physical Mechanisms ◽  
Oxygen Migration ◽  
Buried Layer

ABSTRACTHigh temperature annealing of Simox wafers (T > 1300°C), has been proved to dramaticaly increase the quality of the SOI structure.The heat treatment leads to a redistribution of the implanted oxygen, opposite to its concentration profile, towards the buried layer.This paper describes from a thermodynamical point of view the SiO2 precipitates dissolution. The physical mechanisms of the oxygen migration are also discussed.

Effect of Low-Temperature Recovery Treatments on Subsequent Recrystallization in Al-2.5%Mg

2007 ◽  
Vol 550 ◽  
pp. 381-386 ◽  
Author(s):  
B. Decreus ◽  
Hatem S. Zurob ◽  
John Dunlop ◽  
Yves Bréchet
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Hardness Measurement ◽  
Optical Metallography ◽  
Mg Alloys ◽  
High Temperature Annealing ◽  
Recrystallization Kinetics ◽  
Temperature Recovery ◽  
Kinetics Of ◽  
And Calorimetry

The effect of low temperature recovery treatments on the recrystallization kinetics during subsequent high temperature annealing was investigated in three Al-2.5%Mg alloys with various Fe additions. Recovery treatments were carried out at 190oC for times ranging from 0.25 to 65 hrs. Recrystallization treatments were carried out at 280oC. The kinetics of recrystallization was followed using the techniques of hardness measurement, optical metallography and calorimetry.

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