Qualitative Prediction of SiO[sub 2] Removal Rates during Chemical Mechanical Polishing

2000 ◽  
Vol 147 (12) ◽  
pp. 4671 ◽  
Author(s):  
Danilo Castillo-Mejia ◽  
Andreas Perlov ◽  
Stephen Beaudoin
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Removal Rates ◽  
Qualitative Prediction

Removal Rate, Uniformity and Defectivity Studies of Chemical Mechanical Polishing of BPSG Films

2000 ◽  
Vol 613 ◽  
Author(s):  
Benjamin A. Bonner ◽  
Boris Fishkin ◽  
Jeffrey David ◽  
Chad Garretson ◽  
Thomas H. Osterheld
Keyword(s):  
Chemical Mechanical Polishing ◽  
Boron Concentration ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Phosphorus Concentration ◽  
Removal Rates ◽  
Percent Increase

ABSTRACTWafers where deposited with BPSG films having phosphorus concentration varying from 3.65 to 6.25% and boron concentration varying from 4 to 5.7%. These wafers were polished using CMP and the rates were found to depend on dopant concentrations. A fit to the data indicated that removal rates were more than 3 times as sensitive to boron concentration compared to phosphorus concentration. For a constant phosphorus concentration of 5%, each percent increase in boron increases CMP removal rate by 340 Å/min. For a constant boron concentration of 5%, each percent increase in phosphorus increases CMP removal rate by 96 Å/min.

A Novel Single Step Lapping and Chemo-Mechanical Polishing Scheme for Antimonide Based Semiconductors Using 1 µm Agglomerate-Free Alumina Slurry

2000 ◽  
Vol 613 ◽  
Author(s):  
P.S. Dutta ◽  
R.J. Gutmann ◽  
D. Keller ◽  
L. Sweet
Keyword(s):  
Surface Roughness ◽  
Chemical Mechanical Polishing ◽  
Single Step ◽  
Mechanical Polishing ◽  
Removal Rates ◽  
Novel Approach ◽  
Slurry Preparation

ABSTRACTA novel approach for a single step lapping and chemical-mechanical polishing of antimonide-based III-V compounds using agglomerate-free alumina slurries is presented. Relatively high removal rates, minimal scratching, and low surface roughness have been obtained. The effects of slurry preparation cycle on the slurry properties and chemomechanical polishing results are discussed.

scholarly journals Kinematic Prediction and Experimental Demonstration of Conditioning Process for Controlling the Profile Shape of a Chemical Mechanical Polishing Pad

2021 ◽  
Vol 11 (10) ◽  
pp. 4358
Author(s):  
Hanchul Cho ◽  
Taekyung Lee ◽  
Doyeon Kim ◽  
Hyoungjae Kim
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Shape Error ◽  
Profile Shape ◽  
Conditioning Process ◽  
Polishing Pad ◽  
Simulation Based ◽  
Diamond Conditioner ◽  
Pad Conditioning ◽  
Good Agreement

The uniformity of the wafer in a chemical mechanical polishing (CMP) process is vital to the ultra-fine and high integration of semiconductor structures. In particular, the uniformity of the polishing pad corresponding to the tool directly affects the polishing uniformity and wafer shape. In this study, the profile shape of a CMP pad was predicted through a kinematic simulation based on the trajectory density of the diamond abrasives of the diamond conditioner disc. The kinematic prediction was found to be in good agreement with the experimentally measured pad profile shape. Based on this, the shape error of the pad could be maintained within 10 μm even after performing the pad conditioning process for more than 2 h, through the overhang of the conditioner.

scholarly journals Non-spherical abrasives with ordered mesoporous structures for chemical mechanical polishing

2021 ◽  
Author(s):  
Peili Gao ◽  
Tingting Liu ◽  
Zhenyu Zhang ◽  
Fanning Meng ◽  
Run-Ping Ye ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Ordered Mesoporous ◽  
Mesoporous Structures
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