The Effect of Interactions Between Water and Polishing Pads on Chemical Mechanical Polishing Removal Rates

2003 ◽  
Vol 150 (2) ◽  
pp. G76 ◽  
Author(s):  
D. Castillo-Mejia ◽  
S. Gold ◽  
V. Burrows ◽  
S. Beaudoin
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Removal Rates ◽  
Polishing Pads

Nonlinear Dependence of Cu Dishing Depth on the Microstructure of Polishing Pads during Chemical Mechanical Polishing

2009 ◽  
Vol 156 (7) ◽  
pp. H535
Author(s):  
Te-Ming Kung ◽  
Chuan-Pu Liu ◽  
Shih-Chieh Chang ◽  
Kei-Wei Chen ◽  
Ying-Lang Wang
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Nonlinear Dependence ◽  
Polishing Pads

Effect of Polishing Pad Material Properties on Chemical Mechanical Polishing (Cmp) Processes

1994 ◽  
Vol 337 ◽  
Author(s):  
Rajeev Bajaj ◽  
Mukesh Desai ◽  
Rahul Jairath ◽  
Matthew Stell ◽  
Robert Tolles
Keyword(s):  
Material Properties ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Cellular Structure ◽  
Mechanical Response ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Cold Flow ◽  
Polymer Properties ◽  
Polishing Pads

ABSTRACTChemical mechanical polishing (CMP) technology has successfully met the stringent requirements of ultraplanarized surfaces in semiconductor manufacture. Commonly, polyurethane based pads have been used to achieve this level of planarization. Recent studies have shown that the material properties of polishing pads used in the CMP process strongly influence the ability to reduce topography. In addition, past work has shown that in the absence of pad regeneration, polishing rate drops dramatically with polishing time. This decrease in material removal rate is believed to coincide with deterioration of the pad surface due to “cold flow” and/or “caking” of the pad material. This study attempts to correlate the intrinsic polymer properties and cellular structure of the pad material to CMP process indices like polishing rate and planarity. For example, the drop off in removal rate as a function of time can be attributed to the mechanical response of polyurethanes under conditions of critical shear. Moreover, planarity achieved is a function of pad stiffness - which itself is dependant upon intrinsic polymer stiffness and cell density.

Characteristics in chemical-mechanical polishing of copper: comparison of polishing pads

1997 ◽  
Vol 108 (1) ◽  
pp. 39-44 ◽  
Author(s):  
Z. Stavreva ◽  
D. Zeidler ◽  
M. Plötner ◽  
K. Drescher
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Polishing Pads

Removal Rate, Uniformity and Defectivity Studies of Chemical Mechanical Polishing of BPSG Films

2000 ◽  
Vol 613 ◽  
Author(s):  
Benjamin A. Bonner ◽  
Boris Fishkin ◽  
Jeffrey David ◽  
Chad Garretson ◽  
Thomas H. Osterheld
Keyword(s):  
Chemical Mechanical Polishing ◽  
Boron Concentration ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Phosphorus Concentration ◽  
Removal Rates ◽  
Percent Increase

ABSTRACTWafers where deposited with BPSG films having phosphorus concentration varying from 3.65 to 6.25% and boron concentration varying from 4 to 5.7%. These wafers were polished using CMP and the rates were found to depend on dopant concentrations. A fit to the data indicated that removal rates were more than 3 times as sensitive to boron concentration compared to phosphorus concentration. For a constant phosphorus concentration of 5%, each percent increase in boron increases CMP removal rate by 340 Å/min. For a constant boron concentration of 5%, each percent increase in phosphorus increases CMP removal rate by 96 Å/min.

The Relative Friction Force Contributions of Polishing Pads and Slurries During Chemical Mechanical Polishing

2005 ◽  
Author(s):  
Joseph A. Levert ◽  
Chad S. Korach
Keyword(s):  
Integrated Circuits ◽  
Chemical Mechanical Polishing ◽  
Dielectric Materials ◽  
Mechanical Polishing ◽  
Nanoscale Friction ◽  
Friction Measurements ◽  
Three Body ◽  
Variable Combination ◽  
Polishing Pads ◽  
Relative Friction

Next generation integrated circuits (IC’s) will require the use of porous dielectric materials with shear strengths much lower than the currently used dense silicon dioxide. The high friction of CMP (chemical mechanical polishing) may damage these porous dielectric materials. This research is being performed to define the nanoscale source of this poorly understood CMP friction to enable development of less damaging CMP processes. It is proposed that the nanoscale friction on the IC from CMP is a variable combination of two-body pad nanoasperity to IC contact and three-body nanocontact of the slurry particle between the pad nanoasperity and the IC surface. This research uses a combination of individual nanoscale friction measurements for CMP of SiO2, an analytical model to sum these effects, and bench scale CMP experiments to guide the research and validate the model.

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