scholarly journals Metal–organic atomic-layer deposition of titanium–silicon–nitride films

1999 ◽  
Vol 75 (11) ◽  
pp. 1521-1523 ◽  
Author(s):  
Jae-Sik Min ◽  
Hyung-Sang Park ◽  
Sang-Won Kang
Keyword(s):  
Silicon Nitride ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Silicon Nitride Films ◽  
Layer Deposition ◽  
Metal Organic ◽  
Titanium Silicon Nitride ◽  
Titanium Silicon

Chemical Vapor Deposition of Ti-Si-N Films with Alternating Source Supply

1999 ◽  
Vol 564 ◽  
Author(s):  
Jae-Sik Min ◽  
Hyung-Sang Park ◽  
Wonyong Koh ◽  
Sang-Won Kang
Keyword(s):  
Atomic Layer Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Precise Control ◽  
Silicon Nitride Films ◽  
Layer Deposition ◽  
Si Content ◽  
Titanium Silicon Nitride ◽  
Titanium Silicon

AbstractTitanium-silicon-nitride films were grown by atomic layer deposition using an alternating supply of tetrakis(dimethylamido)titanium (TDMAT), silane. and ammonia, at substrate temperature of 180°C. The supply of a reactant was followed by a purge with inert gas before introducing another reactant onto the substrate in order to prevent gas-phase reactions. In one set of experiments the reactants were supplied separately in the sequence of TDMAT. silane. and ammonia. The Si content of the films remained constant at 18 at.%. and the film growth rate varied little from 0.24 nm per reactant-supply-cycle, even though silane partial pressure varied from 0.002 to 0.1 torr. In the other set of experiments silane and ammonia were simultaneously supplied in the sequence of TDMAT and silane/ammonia. The Si content varied from 3 to 23 at.% as the silane-to-ammonia ratio varied from 0.01 to 10. Atomic layer deposition of Ti-Si-N films allows the precise control of Si content as well as film thickness.

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