Modeling and Optimization of Oxynitride Gate Dielectrics Formation by Remote Plasma Nitridation of Silicon Dioxide

1999 ◽  
Vol 146 (3) ◽  
pp. 1111-1116 ◽  
Author(s):  
Dixit Kapila ◽  
Sunil Hattangady ◽  
Monte Douglas ◽  
Robert Kraft ◽  
Michael Gribelyuk
Keyword(s):  
Silicon Dioxide ◽  
Gate Dielectrics ◽  
Remote Plasma ◽  
Modeling And Optimization ◽  
Plasma Nitridation

Effects of N2 and NH3 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics

2010 ◽  
Vol 257 (4) ◽  
pp. 1347-1350 ◽  
Author(s):  
K.-S. Park ◽  
K.-H. Baek ◽  
D.P. Kim ◽  
J.-C. Woo ◽  
L.-M. Do ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Electrical Characteristics ◽  
Remote Plasma ◽  
Plasma Nitridation

High-quality ultrathin (1.6 nm) nitride/oxide stack gate dielectrics prepared by combining remote plasma nitridation and LPCVD technologies

2001 ◽  
Vol 22 (6) ◽  
pp. 260-262 ◽  
Author(s):  
C.H. Chen ◽  
Y.K. Fang ◽  
C.W. Yang ◽  
S.F. Ting ◽  
Y.S. Tsair ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Remote Plasma ◽  
High Quality ◽  
Plasma Nitridation ◽  
Nitride Oxide

Temperature dependence of the etch rate and selectivity of silicon nitride over silicon dioxide in remote plasma NF3/Cl2

1995 ◽  
Vol 67 (13) ◽  
pp. 1902-1904 ◽  
Author(s):  
J. Staffa ◽  
D. Hwang ◽  
B. Luther ◽  
J. Ruzyllo ◽  
R. Grant
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Temperature Dependence ◽  
Etch Rate ◽  
Remote Plasma

Microwave plasma nitridation of silicon dioxide on strained Si

1998 ◽  
Vol 73 (11) ◽  
pp. 1559-1561 ◽  
Author(s):  
L. K. Bera ◽  
H. D. Banerjee ◽  
S. K. Ray ◽  
M. Mukhopadhyay ◽  
C. K. Maiti
Keyword(s):  
Silicon Dioxide ◽  
Microwave Plasma ◽  
Strained Si ◽  
Plasma Nitridation

Properties of thin oxynitride gate dielectrics produced by thermal nitridation of silicon dioxide

1980 ◽  
Author(s):  
M.L. Naiman ◽  
F.L. Terry ◽  
J.A. Burns ◽  
J.I. Raffel ◽  
R. Aucoin
Keyword(s):  
Silicon Dioxide ◽  
Gate Dielectrics ◽  
Thermal Nitridation
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