Leakage Current Mechanism of Metal ‐ Ta2 O 5 ‐ Metal Capacitors for Memory Device Applications

1999 ◽  
Vol 146 (1) ◽  
pp. 266-269 ◽  
Author(s):  
Benjamin Chih‐ming Lai ◽  
Joseph Ya‐min Lee
Keyword(s):  
Leakage Current ◽  
Memory Device ◽  
Device Applications ◽  
Leakage Current Mechanism ◽  
Current Mechanism

scholarly journals Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs

2020 ◽  
Vol 67 (7) ◽  
pp. 1381-1389
Author(s):  
C. Martinella ◽  
T. Ziemann ◽  
R. Stark ◽  
A. Tsibizov ◽  
K. O. Voss ◽  
...  
Keyword(s):  
Leakage Current ◽  
Heavy Ion ◽  
Single Event ◽  
Leakage Current Mechanism ◽  
Current Mechanism

Oxygen Stability and Leakage Current Mechanism in Ferroelectric La-Substituted Bi4Ti3O12Single Crystals

2005 ◽  
Vol 44 (9B) ◽  
pp. 6998-7002 ◽  
Author(s):  
Yuji Noguchi ◽  
Masayuki Soga ◽  
Masatake Takahashi ◽  
Masaru Miyayama
Keyword(s):  
Leakage Current ◽  
Leakage Current Mechanism ◽  
Current Mechanism

scholarly journals A review of leakage current mechanism in nitride based light emitting diode

2016 ◽  
Vol 12 (2) ◽  
Author(s):  
Anati Syahirah Hedzir ◽  
Norasmahan Muridan ◽  
Nurul Fadzlin Hasbullah
Keyword(s):  
Leakage Current ◽  
Light Emitting Diode ◽  
Forward Bias ◽  
Dominant Mechanism ◽  
Light Emitting ◽  
Fluorescent Lamps ◽  
High Bias ◽  
Assisted Tunneling ◽  
Leakage Current Mechanism ◽  
Current Mechanism

We review the dominant mechanism and characteristics of it which gave rise to the existence of forward and reverse leakage current in nitride based light emitting diode (LED). LED is one of the promising device to be used as a lighting source because it does not contain mercury unlike fluorescent lamps. However, the existence of leakage current can affect the reliability and efficiency of LED. Hence, its importance to understand the mechanism that responsible for its existence. The occurrence of leakage current is divided into three main parameters: 1) low bias; 2) medium or high bias; 3) temperature dependence. In low reverse bias, Poole-Frenkel is the dominant mechanism while tunneling is the dominant mechanism in high bias region. Furthermore, in forward bias, defect assisted tunneling is most likely the dominant mechanism. In low forward bias, electrons are the dominant carriers in defect assisted tunneling while in medium forward bias, holes are the dominant carriers.  Moreover, Variable Range Hopping (VRH) is reported to be dominant when the temperature of conduction is below 200K. 

scholarly journals Ferroelectric and Electrical Properties Optimization of Mg-doped BiFeO3 Flexible Multiferroic Films

Symmetry ◽  
2020 ◽  
Vol 12 (7) ◽  
pp. 1173
Author(s):  
Der-Yuh Lin ◽  
Hone-Zern Chen ◽  
Ming-Cheng Kao ◽  
Pei-Li Zhang
Keyword(s):  
Electric Field ◽  
Leakage Current ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Storage Device ◽  
Bifeo3 Film ◽  
Device Applications ◽  
Multiferroic Films ◽  
Current Densities ◽  
Leakage Current Mechanism

Bi1-xMgxFeO3 (BMFO, x = 0, 0.02, 0.04, 0.06 and 0.08) multiferroic films were directly synthesized on flexible stainless steel (FSS), save the bottom electrode process, by means of sol–gel spin-coating technology. The effects of different bending conditions on ferroelectric, dielectric and leakage-current properties of BMFO films were investigated. The leakage-current densities of BiFeO3 (BFO, x = 0) and BMFO (x = 0.06) films were 5.86 × 10−4 and 3.73 × 10−7 A/cm2, which shows that the BMFO (x = 0.06) has more than three orders of magnitude lower than that of BFO film. The residual polarization (2 Pr) can be enhanced from 120 to 140 μC/cm2. The proper doping of Mg in BiFeO3 film could provide an effective method for reducing the leakage-current values as well as boosting the ferroelectric properties. In this study, the leakage-current mechanism of low electric field and high electric field of BMFO film is analyzed and established. In addition, the flexible BMFO film maintains practical ferroelectric and leakage-current properties at retention time of 106 s under different symmetry bending conditions. These results indicate that the BFMO film will be very practical in opto-electronic and storage device applications.

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