scholarly journals Ferroelectric and Electrical Properties Optimization of Mg-doped BiFeO3 Flexible Multiferroic Films

Symmetry ◽  
2020 ◽  
Vol 12 (7) ◽  
pp. 1173
Author(s):  
Der-Yuh Lin ◽  
Hone-Zern Chen ◽  
Ming-Cheng Kao ◽  
Pei-Li Zhang
Keyword(s):  
Electric Field ◽  
Leakage Current ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Storage Device ◽  
Bifeo3 Film ◽  
Device Applications ◽  
Multiferroic Films ◽  
Current Densities ◽  
Leakage Current Mechanism

Bi1-xMgxFeO3 (BMFO, x = 0, 0.02, 0.04, 0.06 and 0.08) multiferroic films were directly synthesized on flexible stainless steel (FSS), save the bottom electrode process, by means of sol–gel spin-coating technology. The effects of different bending conditions on ferroelectric, dielectric and leakage-current properties of BMFO films were investigated. The leakage-current densities of BiFeO3 (BFO, x = 0) and BMFO (x = 0.06) films were 5.86 × 10−4 and 3.73 × 10−7 A/cm2, which shows that the BMFO (x = 0.06) has more than three orders of magnitude lower than that of BFO film. The residual polarization (2 Pr) can be enhanced from 120 to 140 μC/cm2. The proper doping of Mg in BiFeO3 film could provide an effective method for reducing the leakage-current values as well as boosting the ferroelectric properties. In this study, the leakage-current mechanism of low electric field and high electric field of BMFO film is analyzed and established. In addition, the flexible BMFO film maintains practical ferroelectric and leakage-current properties at retention time of 106 s under different symmetry bending conditions. These results indicate that the BFMO film will be very practical in opto-electronic and storage device applications.

INVESTIGATION OF LEAKAGE CURRENT BEHAVIOR OF Pt/Bi0.975La0.025Fe0.975Ni0.025O3/Pt CAPACITOR MEASURED AT DIFFERENT TEMPERATURES

2014 ◽  
Vol 21 (02) ◽  
pp. 1450029 ◽  
Author(s):  
XIU HONG DAI ◽  
HONG DONG ZHAO ◽  
LEI ZHANG ◽  
HUI JUAN ZHU ◽  
XIAO HONG LI ◽  
...  
Keyword(s):  
Electric Field ◽  
Leakage Current ◽  
Applied Electric Field ◽  
Conduction Mechanism ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Ohmic Behavior ◽  
Different Temperatures ◽  
Limited Conduction ◽  
Current Behavior

Polycrystalline Bi 0.975 La 0.025 Fe 0.975 Ni 0.025 O 3 (BLFNO) film is fabricated on Pt / Ti / SiO 2/ Si (111) substrate by sol–gel method. It is found that the well-crystallized BLFNO film is polycrystalline, and the Pt / BLFNO / Pt capacitor possesses good ferroelectric properties with remnant polarization of 74 μC/cm2 at electric field of 833 kV/cm. Moreover, it is also found that the leakage current density of the Pt / BLFNO / Pt capacitor increases with the increase of measurement temperature ranging from 100 to 300 K. The leakage density of the Pt / BLFNO / Pt capacitor satisfies space-charge-limited conduction (SCLC) at higher electric field and shows little dependence on voltage polarity and temperature, but shows polarity and temperature dependence at lower applied electric field. With temperature increasing from 100 to 300 K at lower applied electric field, the most likely conduction mechanism is from Ohmic behavior to SCLC for positive biases, but no clear dominant mechanism for negative biases is shown.

The Effect of RuO2/Pt Hybrid Bottom Electrode Structure on The Microstructure and Ferroelectric Properties of Sol-Gel Derived PZT Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
Seung-Hyun Kim ◽  
J. G. Hong ◽  
J. C. Gunter ◽  
H. Y. Lee ◽  
S. K. Streiffer ◽  
...  
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Bottom Electrode ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Chemical Solution ◽  
Electrode Structure ◽  
Solution Deposition ◽  
Pzt Thin Films ◽  
Chemical Solution Deposition Method

ABSTRACTFerroelectric PZT thin films on thin RuO2 (10, 30, 50nm)/Pt hybrid bottom electrodes were successfully prepared by using a modified chemical solution deposition method. It was observed that the use of a lOnm RuO2Pt bottom electrode reduced leakage current, and gave more reliable capacitors with good microstructure compare to the use of thicker RuO2/Pt bottom electrodes. Typical P-E hysteresis behavior was observed even at an applied voltage of 3V, demonstrating greatly improved remanence and coercivity. Fatigue and breakdown characteristics, measured at 5V, showed stable behavior, and only below 13-15% degradation was observed up to 1010 cycles. Thicker RuO2 layers resulted in high leakage current density due to conducting lead ruthenate or PZT pyrochlore-ruthenate and a rosette-type microstructure.

Photo-induced Large Area Growth Of Dielectrics With Excimer Lamps

2000 ◽  
Vol 617 ◽  
Author(s):  
Ian W. Boyd ◽  
Jun-Ying Zhang
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Low Temperature ◽  
Leakage Current ◽  
Sol Gel ◽  
Low Dielectric Constant ◽  
Large Area ◽  
Excimer Lamp ◽  
Low Dielectric ◽  
Current Densities

AbstractIn this paper, UV-induced large area growth of high dielectric constant (Ta2O5, TiO2and PZT) and low dielectric constant (polyimide and porous silica) thin films by photo-CVD and sol-gel processing using excimer lamps, as well as the effect of low temperature LW annealing, are discussed. Ellipsometry, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), UV spectrophotometry, atomic force microscope (AFM), capacitance-voltage (C-V) and current-voltage (I-V) measurements have been employed to characterize oxide films grown and indicate them to be high quality layers. Leakage current densities as low as 9.0×10−8 Acm−2 and 1.95×10−7 Acm−2 at 0.5 MV/cm have been obtained for the as-grown Ta2O5 films formed by photo-induced sol-gel processing and photo-CVD. respectively - several orders of magnitude lower than for any other as-grown films prepared by any other technique. A subsequent low temperature (400°C) UV annealing step improves these to 2.0×10−9 Acm−2 and 6.4× 10−9 Acm−2, respectively. These values are essentially identical to those only previously formed for films annealed at temperatures between 600 and 1000°C. PZT thin films have also been deposited at low temperatures by photo-assisted decomposition of a PZT metal-organic sol-gel polymer using the 172 nm excimer lamp. Very low leakage current densities (10−7 A/cm2) can be achieved, which compared with layers grown by conventional thermal processing. Photo-induced deposition of low dielectric constant organic polymers for interlayer dielectrics has highlighted a significant role of photo effects on the curing of polyamic acid films. I-V measurements showed the leakage current density of the irradiated polymer films was over an order of magnitude smaller than has been obtained in the films prepared by thermal processing. Compared with conventional furnace processing, the photo-induced curing of the polyimide provided both reduced processing time and temperature, A new technique of low temperature photo-induced sol-gel process for the growth of low dielectric constant porous silicon dioxide thin films from TEOS sol-gel solutions with a 172 nm excimer lamp has also been successfully demonstrated. The dielectric constant values as low as 1.7 can be achieved at room temperature. The applications investigated so far clearly demonstrate that low cost high power excimer lamp systems can provide an interesting alternative to conventional UV lamps and excimer lasers for industrial large-scale low temperature materials processing.

Structural, Electrical and Magnetic Properties of Modified Bi1/2Na1/2TiO3 - Modified CFO Based Magnetostrictive (Co0.6Zn0.4Fe1.7Mn0.3O4) Particulate Nanocomposite

2017 ◽  
Vol 886 ◽  
pp. 13-16
Author(s):  
Mintu Tyagi ◽  
Vinod Kumar ◽  
Gurpreet Kaur ◽  
Puneet Sharma
Keyword(s):  
Magnetic Properties ◽  
Magnetic Measurements ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Lead Free ◽  
Great Opportunity ◽  
Electrical And Magnetic Properties ◽  
Device Applications ◽  
Two Phases

Lead free Multiferroic composites that comprise Co0.6Zn0.4Fe1.7Mn0.3O4 (CZFMO) and 72.5(Bi1/2Na1/2TiO3)-22.5(Bi1/2K1/2TiO3)-5(BiMg1/2Ti1/2O3) (BNT-BNT-BMgT) were synthesized using sol-gel method and it’s structural, ferroelectric and magnetic properties were studied. The X-ray diffraction displayed the single phase formation of parent phases and the presence of two phases in the composites. The samples showed a well saturated polarization-electric field hysteresis loops. The remnant polarization and saturation polarization values are decreased with increasing ferrite content. Room temperature (RT) magnetic measurements show that composites are soft magnetic. The composite with x = 0.2, showed the enhanced magnetic and ferroelectric properties. Moreover, these ME composites provide a great opportunity as potential lead free systems for multifuntional device applications.

scholarly journals Dielectric and ferroelectric properties of CoCr2O4 nanoceramics

2019 ◽  
Vol 09 (03) ◽  
pp. 1950015 ◽  
Author(s):  
Pankaj Choudhary ◽  
P. Saxena ◽  
A. Yadav ◽  
V. N. Rai ◽  
A. Mishra
Keyword(s):  
Leakage Current ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Complex Impedance ◽  
Interfacial Polarization ◽  
Nyquist Plot ◽  
Dielectric Parameters ◽  
Electron Conduction ◽  
Auto Combustion ◽  
Current Behavior

CoCr2O4 nanoceramics are prepared by sol–gel auto combustion method. Synchrotron X-ray diffraction analysis affirms the single-phase pristine cubic structure with space group [Formula: see text]. Debye–Scherrer method estimates the crystallite size of main intense peak to be [Formula: see text][Formula: see text]nm. Prominent bands obtained in infrared spectra at 448 and 599[Formula: see text]cm[Formula: see text] are due to metal–oxygen stretching bond present at tetrahedral and octahedral sites. Dielectric parameters decrease as frequency increases from [Formula: see text] to [Formula: see text][Formula: see text]Hz that can be interpreted by Maxwell–Wagner-type interfacial polarization. Complex impedance spectra (Nyquist plot) reveal arc like behavior, which is mainly due to intergrain (grain boundary) resistance that also exhibits conducting nature of the nanoceramics. Weak ferroelectricity is mainly associated with the partial reversal of the polarization. Leakage current behavior follows the Ohmic and Child square law. Electron conduction process was interpreted by space-charge limited current (SCLC) mechanism. Leakage current behavior observed in cobalt chromite nanoceramics is mainly attributed to the oxygen vacancies.

Investigation of Retention Properties for YMnO3 Based Metal/Ferroelectric/Insulator/Semiconductor Capacitors

2003 ◽  
Vol 784 ◽  
Author(s):  
T. Yoshimura ◽  
D. Ito ◽  
H. Sakata ◽  
N. Shigemitsu ◽  
K. Haratake ◽  
...  
Keyword(s):  
Electric Field ◽  
Leakage Current ◽  
Electric Fields ◽  
Retention Time ◽  
Memory Retention ◽  
Frenkel Emission ◽  
Transient Spectroscopy ◽  
Leakage Current Mechanism ◽  
Capacitance Transient ◽  
The Relationship

ABSTRACTThe memory retention properties of Pt/YMnO3/Y2O3/Si capacitors were investigated for the application of ferroelectric gate transistors. The epitaxially grown Pt/YMnO3/Y2O3/Si capacitors showed ferroelectric type hysteresis loop on the capacitance-voltage properties. Although the retention time of the as-deposited capacitors was ∼103 s, it was prolonged up to 104 s when the leakage current density was reduced from 4×10-8 A/cm2 to 2×10-9 A/cm2 by the annealing under N2 ambience. To reveal the relationship between the retention time and leakage current, the leakage current mechanism was investigated comparing several conduction mechanisms. It was found that the dominant leakage mechanisms at high and low electric fields were Poole-Frenkel emission from the Y2O3 layer and ohmic conduction, respectively. This result indicates that the leakage current was limited by the Y2O3 layer at high electric field and was mainly dominated by the amount of defects in the YMnO3 layer at low electric field. From the pseudo isothermal capacitance transient spectroscopy (ICTS), it was determined that the trap density was in an order of 1015 cm-3. Since the variation of the leakage current by annealing was observed only in the low electric field region, it is suggested that the retention properties of the Pt/YMnO3/Y2O3/Si capacitors was influenced by the amount of defects in the YMnO3 layer.

Effect of zirconium doping on ferroelectric properties and leakage-current mechanism in Bi3.25 La0.75 Ti3 O12 (BLT) thin films

2010 ◽  
Vol 248 (4) ◽  
pp. 1010-1017 ◽  
Author(s):  
Prikshit Gautam ◽  
Sudipta Bhattacharyya ◽  
Sushil K. Singh ◽  
Ravi Kumar ◽  
Ram Pal Tandon
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Ferroelectric Properties ◽  
Zirconium Doping ◽  
Leakage Current Mechanism ◽  
Current Mechanism

Effect of Barium-to-Strontium on Leakage Current Mechanism of Sol-Gel BaxSr1-xTiO3 Thin Films

2014 ◽  
Vol 911 ◽  
pp. 185-189
Author(s):  
Ala’eddin A. Saif ◽  
Zul Azhar Zahid Jamal ◽  
Prabakaran Poopalan
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Electric Fields ◽  
Sol Gel ◽  
Barium Strontium ◽  
Gel Technique ◽  
High Electric Fields ◽  
Leakage Current Mechanism ◽  
Limited Conduction ◽  
Current Mechanism

Ferroelectric barium strontium titanate (BaxSr1-xTiO3) thin films with different Ba content have been fabricated as MFM configuration using sol-gel technique. The effect of barium-to-strontium ratio on the leakage current mechanism of BaxSr1-xTiO3 thin films has been investigated. The results show that the leakage current density increases as Ba content increases, which attributed to the grain size effect. The leakage current for the tested films has been studied using log (J) vs log (E) plane, which shows three distinguished linear regions. These regions have been characterized using power law () to find that: the region at low electric fields (E < 20 KV/cm) is controlled by Ohmic conduction and the other two regions (E > 20 KV/cm) are due to space charge limited conduction, which is also confirmed via modified Langmuir-Child law. In addition, it is observed that at high electric fields region (E > 1.29×105 V/m) the films show Schottky emission (SE) and PooleFrenkel (PF) emission mechanisms.

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