Novel Palladium Germanide Schottky Contact for High Performance Schottky Barrier Ge MOSFETs and Characterization of Its Leakage Current Mechanism

2012 ◽  
Vol 12 (7) ◽  
pp. 5347-5350 ◽  
Author(s):  
Se-Kyung Oh ◽  
Hong-Sik Shin ◽  
Min-Ho Kang ◽  
Ga-Won Lee ◽  
Hi-Deok Lee
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
High Performance ◽  
Schottky Contact ◽  
Leakage Current Mechanism ◽  
Current Mechanism

Analysis of Leakage Current Mechanism for Ni/Au Schottky Contact on InAlGaN/GaN HEMT

2018 ◽  
Vol 215 (11) ◽  
pp. 1700741 ◽  
Author(s):  
Franky Lumbantoruan ◽  
Chia-Hsun Wu ◽  
Xia-Xi Zheng ◽  
Sankalp K. Singh ◽  
Chang-Fu Dee ◽  
...  
Keyword(s):  
Leakage Current ◽  
Schottky Contact ◽  
Gan Hemt ◽  
Leakage Current Mechanism ◽  
Current Mechanism

scholarly journals Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs

2020 ◽  
Vol 67 (7) ◽  
pp. 1381-1389
Author(s):  
C. Martinella ◽  
T. Ziemann ◽  
R. Stark ◽  
A. Tsibizov ◽  
K. O. Voss ◽  
...  
Keyword(s):  
Leakage Current ◽  
Heavy Ion ◽  
Single Event ◽  
Leakage Current Mechanism ◽  
Current Mechanism

Oxygen Stability and Leakage Current Mechanism in Ferroelectric La-Substituted Bi4Ti3O12Single Crystals

2005 ◽  
Vol 44 (9B) ◽  
pp. 6998-7002 ◽  
Author(s):  
Yuji Noguchi ◽  
Masayuki Soga ◽  
Masatake Takahashi ◽  
Masaru Miyayama
Keyword(s):  
Leakage Current ◽  
Leakage Current Mechanism ◽  
Current Mechanism

Electrical Characterization of Ni-Silicide Schottky Contacts on SiC for High Performance Temperature Sensor

2015 ◽  
Vol 821-823 ◽  
pp. 436-439 ◽  
Author(s):  
Razvan Pascu ◽  
Gheorghe Pristavu ◽  
Gheorghe Brezeanu ◽  
Florin Draghici ◽  
Marian Badila ◽  
...  
Keyword(s):  
Barrier Height ◽  
Temperature Sensor ◽  
High Performance ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Electrical Characterization ◽  
Post Annealing ◽  
Schottky Device ◽  
Post Annealing Temperature

The electrical behavior and stability of a temperature sensor based on 4H-SiC Schottky diodes using Ni2Si as Schottky contact, are investigated. The ideality factor and the barrier height were found to be strongly dependent on the post-annealing temperature of the Ni contact (which lead to the formation of Ni2Si). A nearly ideal Schottky device, with the barrier height approaching the high value of1.7eV, and a slight temperature dependence, was obtained after an annealing atTA=800°C.This high barrier height proves that Ni2Si is suitable as Schottky contact for temperature sensors, able to reliably operate up to450°C. Sensor sensitivity levels between1.00mV/°Cand2.70 mV/°Chave been achieved.

scholarly journals A review of leakage current mechanism in nitride based light emitting diode

2016 ◽  
Vol 12 (2) ◽  
Author(s):  
Anati Syahirah Hedzir ◽  
Norasmahan Muridan ◽  
Nurul Fadzlin Hasbullah
Keyword(s):  
Leakage Current ◽  
Light Emitting Diode ◽  
Forward Bias ◽  
Dominant Mechanism ◽  
Light Emitting ◽  
Fluorescent Lamps ◽  
High Bias ◽  
Assisted Tunneling ◽  
Leakage Current Mechanism ◽  
Current Mechanism

We review the dominant mechanism and characteristics of it which gave rise to the existence of forward and reverse leakage current in nitride based light emitting diode (LED). LED is one of the promising device to be used as a lighting source because it does not contain mercury unlike fluorescent lamps. However, the existence of leakage current can affect the reliability and efficiency of LED. Hence, its importance to understand the mechanism that responsible for its existence. The occurrence of leakage current is divided into three main parameters: 1) low bias; 2) medium or high bias; 3) temperature dependence. In low reverse bias, Poole-Frenkel is the dominant mechanism while tunneling is the dominant mechanism in high bias region. Furthermore, in forward bias, defect assisted tunneling is most likely the dominant mechanism. In low forward bias, electrons are the dominant carriers in defect assisted tunneling while in medium forward bias, holes are the dominant carriers.  Moreover, Variable Range Hopping (VRH) is reported to be dominant when the temperature of conduction is below 200K. 

Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure

2016 ◽  
Vol 12 (2) ◽  
pp. 232-236 ◽  
Author(s):  
Apurba Chakraborty ◽  
Saptarsi Ghosh ◽  
Partha Mukhopadhyay ◽  
Sanjay K. Jana ◽  
Syed Mukulika Dinara ◽  
...  
Keyword(s):  
Leakage Current ◽  
Reverse Bias ◽  
Leakage Current Mechanism ◽  
Gan Heterostructure ◽  
Current Mechanism
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