X-ray Photoelectron Spectroscopy of silicon oxynitride layers obtained by low-energy ion implantation

1988 ◽  
Vol 46 (2) ◽  
pp. 87-90 ◽  
Author(s):  
O. Benkherourou ◽  
J. P. Deville
Keyword(s):  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Silicon Oxynitride ◽  
Low Energy ◽  
X Ray

Optical properties of anatase TiO2 films modified by N ion implantation

2012 ◽  
Vol 90 (1) ◽  
pp. 39-43 ◽  
Author(s):  
X. Xiang ◽  
D. Chang ◽  
Y. Jiang ◽  
C.M. Liu ◽  
X.T. Zu
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Atomic Force ◽  
Light Region ◽  
Uv Visible ◽  
Substrate Temperatures

Anatase TiO2 thin films are deposited on K9 glass samples at different substrate temperatures by radio frequency magnetron sputtering. N ion implantation is performed in the as-deposited TiO2 thin films at ion fluences of 5 × 1016, 1 × 1017, and 5 × 1017 ions/cm2. X-ray diffraction, atomic force microscope, X-ray photoelectron spectroscopy (XPS), and UV–visible spectrophotometer are used to characterize the films. With increasing N ion fluences, the absorption edges of anatase TiO2 films shift to longer wavelengths and the absorbance increases in the visible light region. XPS results show that the red shift of TiO2 films is due to the formation of N–Ti–O compounds. As a result, photoactivity is enhanced with increasing N ion fluence.

Surface Band Structure Studies of Si Rich Reconstructions on 4H-SiC(1-100)

2005 ◽  
Vol 483-485 ◽  
pp. 547-550 ◽  
Author(s):  
Konstantin V. Emtsev ◽  
Thomas Seyller ◽  
Lothar Ley ◽  
A. Tadich ◽  
L. Broekman ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Electron Diffraction ◽  
Photoelectron Spectroscopy ◽  
Low Energy ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Surface Band ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Different Temperatures ◽  
Low Energy Electron

We have investigated Si-rich reconstructions of 4H-SiC( 00 1 1 ) surfaces by means of low-energy electron diffraction (LEED), x-ray photoelectron spectroscopy (XPS), and angleresolved ultraviolet photoelectron spectroscopy (ARUPS). The reconstructions of 4H-SiC( 00 1 1 ) were prepared by annealing the sample at different temperatures in a flux of Si. Depending on the temperature different reconstructions were observed: c(2×2) at T=800°C, c(2×4) at T=840°C. Both reconstructions show strong similarities in the electronic structure.

COMPARISON OF WEAR RESISTANCE MECHANISMS OF DIE STEEL IMPLANTED WITH C AND Mo IONS

2007 ◽  
Vol 14 (03) ◽  
pp. 517-520
Author(s):  
M. F. CHENG ◽  
J. H. YANG ◽  
X. D. LUO ◽  
T. H. ZHANG
Keyword(s):  
Wear Resistance ◽  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Grazing Angle ◽  
Resistance Mechanisms ◽  
Ion Source ◽  
Vacuum Arc ◽  
H13 Steel ◽  
Die Steel ◽  
X Ray

Mo and C ions extracted from a metal vapor vacuum arc ion source were implanted into the surface of die steel (H13) to compare the wear resistance mechanisms of the implanted samples, respectively. The concentration depth profiles of implanted ions were measured using Rutherford backscattering spectroscopy and calculated by a code called TRIDYN. The structures of the implanted steel were observed by X-ray photoelectron spectroscopy and grazing-angle X-ray diffraction, respectively. It was found that the conventional heat-treated H13 steel could not be further hardened by the subsequent implanted C ions, and the thickness of the implanted layer was not an important factor for the Mo and C ion implantation to improve the wear resistance of the H13 steel. Mo ion implantation could obviously improve the wear resistance of the steel at an extraction voltage of 48 kV and a dose of 5 × 1017 cm -2 due to formation of a modification layer of little oxidation with Mo 2 C in the implanted surface.

X-ray photoelectron spectroscopy of nitromethane adsorption products on Si(100): A model for N 1s core-level shifts in silicon oxynitride films

2004 ◽  
Vol 95 (4) ◽  
pp. 1963-1968 ◽  
Author(s):  
J. Eng ◽  
I. A. Hubner ◽  
J. Barriocanal ◽  
R. L. Opila ◽  
D. J. Doren
Keyword(s):  
Photoelectron Spectroscopy ◽  
Core Level ◽  
Silicon Oxynitride ◽  
X Ray ◽  
Level Shifts
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