Ultraviolet Nanosecond Laser Annealing for Low Temperature 3D-Sequential Integration Gate Stack

2019 ◽  
Vol 93 (1) ◽  
pp. 19-22
Author(s):  
Sébastien Kerdilès ◽  
Pablo Acosta-Alba ◽  
Anne-Sophie Royet ◽  
Jessica Lassarre ◽  
Cédric Perrot ◽  
...  
Keyword(s):  
Low Temperature ◽  
Laser Annealing ◽  
Nanosecond Laser ◽  
Gate Stack

Direct LaLuO3/Ge Gate Stack Formation by Interface Layer Scavenging and Subsequent Low Temperature O2 Annealing

2019 ◽  
Vol 33 (3) ◽  
pp. 375-382 ◽  
Author(s):  
Toshiyuki Tabata ◽  
Choong Hyun Lee ◽  
Koji Kita ◽  
Akira Toriumi
Keyword(s):  
Low Temperature ◽  
Interface Layer ◽  
Gate Stack

Silicon Bipolar Transistors Fabricated using Ion Implantation and Laser Annealing

1980 ◽  
Vol 1 ◽  
Author(s):  
Nobuyoshi Natsuaki ◽  
Takao Miyazaki ◽  
Makoto Ohkura ◽  
Toru Nakamura ◽  
Masao Tamura ◽  
...  
Keyword(s):  
Low Temperature ◽  
Laser Pulse ◽  
Laser Irradiation ◽  
Ruby Laser ◽  
Laser Annealing ◽  
Bipolar Transistors ◽  
Pulse Irradiation ◽  
Irradiation Effects ◽  
Furnace Annealing ◽  
Temperature Furnace

ABSTRACTBipolar transistors with laser annealed base and emitter, as well as those with furnace annealed base and laser annealed emitter, have been successfully fabricated using Q-switched ruby laser pulse irradiation. The performance of laser asannealed transistors is rather poor. However, it can be improved, to some extent, by relatively low temperature furnace annealing after laser irradiation. DC and RF characteristics of laser annealed transistors are presented in conjunction with laser irradiation effects on the characteristics of conventionally fabricated transistors.

Heat Transfer and Phase Transformations in Laser Annealing of Thin a-Si Films

2001 ◽  
Author(s):  
Seung-Jae Moon ◽  
Minghong Lee ◽  
Costas P. Grigoropoulos
Keyword(s):  
Laser Annealing ◽  
Thermal Emission ◽  
Electrical Conductance ◽  
Nanosecond Laser ◽  
Solidification Velocity ◽  
Emission Measurement ◽  
Excimer Laser Annealing ◽  
In Situ Experiments ◽  
Si Films

Abstract The liquid-solid interface motion and the temperature history of thin Si films during excimer laser annealing are observed by in situ experiments combining time-resolved (∼lns) thermal emission measurements, optical reflectance and transmittance at near-IR wavelengths and electrical conductance measurements. The spontaneous nucleation temperature in the supercooled liquid melt is studied from the thermal emission measurement A new double laser recrystallization technique using a temporally modulated CW Ar+ laser in conjunction with a superposed nanosecond laser pulse produces lateral grain growth at the irradiated spot. The laser melting process is numerically simulated. High-resolution laser flash photography enabled in-situ direct visualization of the resolidification process. The images reveal lateral solidification velocity of about 10 m/s.

scholarly journals Crystal Growth of Low-Temperature Processed Poly-Si by Excimer Laser Annealing. Dependences of Poly-Si Grain on Energy Density and Shot Number.

Shinku ◽  
2000 ◽  
Vol 43 (12) ◽  
pp. 1120-1125 ◽  
Author(s):  
Naoto MATSUO ◽  
Hisashi ABE ◽  
Naoya KAWAMOTO ◽  
Ryouhei TAGUCHI ◽  
Tomoyuki NOUDA ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Energy Density ◽  
Low Temperature ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Shot Number

Laser annealing of photoluminescent ZnO nanorods grown at low temperature

2010 ◽  
Vol 22 (2) ◽  
pp. 025205 ◽  
Author(s):  
A Nadarajah ◽  
R Könenkamp
Keyword(s):  
Low Temperature ◽  
Laser Annealing ◽  
Zno Nanorods

Laser annealing of low temperature grown gallium nitride

2001 ◽  
Vol 10 (3-7) ◽  
pp. 1311-1313 ◽  
Author(s):  
W.T Young ◽  
S.R.P Silva ◽  
J.M Shannon
Keyword(s):  
Gallium Nitride ◽  
Low Temperature ◽  
Laser Annealing

Extended defects in ion-implanted si during nanosecond laser annealing

2014 ◽  
Author(s):  
F. Cristiano ◽  
Y. Qiu ◽  
E. Bedel-Pereira ◽  
K. Huet ◽  
F. Mazzamuto ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Nanosecond Laser ◽  
Extended Defects ◽  
Ion Implanted
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