Direct LaLuO3/Ge Gate Stack Formation by Interface Layer Scavenging and Subsequent Low Temperature O2 Annealing

2019 ◽  
Vol 33 (3) ◽  
pp. 375-382 ◽  
Author(s):  
Toshiyuki Tabata ◽  
Choong Hyun Lee ◽  
Koji Kita ◽  
Akira Toriumi
Keyword(s):  
Low Temperature ◽  
Interface Layer ◽  
Gate Stack

The effect of low temperature coating and annealing on structural and optical properties of CdSe/CdS core/shell QDs

2016 ◽  
Vol 55 (4) ◽  
Author(s):  
Maya Isarov ◽  
N. Grumbach ◽  
Georgy I. Maikov ◽  
Jenya Tilchin ◽  
Youngjin Jang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Interface Layer ◽  
Longitudinal Optical ◽  
Band Gap Energy ◽  
Longitudinal Optical Phonon ◽  
Core Shell ◽  
Temperature Dependent ◽  
Structural And Optical Properties ◽  
Wide Range ◽  
Temperature Dependent Properties

This paper presents the optical temperature dependent properties, over a wide range of temperatures from 4 to 300 K, of new CdSe/CdS core/shell colloidal quantum dots (QDs) with varying shell thickness coated and annealed at low temperature. It was demonstrated that low temperature coating and annealing processes enhanced the photoluminescence (PL) quantum yield accompanied by variation in the QDs structure, formation of an alloyed interface layer, suppression of the number of defects at the CdSe/CdS interface, band gap energy red-shift, narrowing of CdS longitudinal optical phonon band, and decrease of the PL inhomogeneous broadening parameter.

Ni/Au–Al2O3 gate stack prepared by low-temperature ALD and lift-off for MOS HEMTs

2013 ◽  
Vol 112 ◽  
pp. 204-207 ◽  
Author(s):  
Michal Blaho ◽  
Dagmar Gregušová ◽  
Michal Jurkovič ◽  
Štefan Haščík ◽  
Ján Fedor ◽  
...  
Keyword(s):  
Low Temperature ◽  
Gate Stack ◽  
Lift Off

Ultraviolet Nanosecond Laser Annealing for Low Temperature 3D-Sequential Integration Gate Stack

2019 ◽  
Vol 93 (1) ◽  
pp. 19-22
Author(s):  
Sébastien Kerdilès ◽  
Pablo Acosta-Alba ◽  
Anne-Sophie Royet ◽  
Jessica Lassarre ◽  
Cédric Perrot ◽  
...  
Keyword(s):  
Low Temperature ◽  
Laser Annealing ◽  
Nanosecond Laser ◽  
Gate Stack

Interface Stabilization of W-N Coatings by Chromium Alloying

1991 ◽  
Vol 237 ◽  
Author(s):  
O. Knotek ◽  
F. Löftier ◽  
A. Barimani
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Vapour Deposition ◽  
Reactive Sputtering ◽  
Interface Layer ◽  
Stable Configuration ◽  
Tungsten Nitride ◽  
Physical Vapour Deposition ◽  
Metastable Structures ◽  
Equilibrium Phases

ABSTRACTNew metastable materials can be deposited using low temperature physical vapour deposition (PVD) techniques. During reactive sputtering, the atoms condensing in an intermixed state attempt to achieve a stable configuration. Due to low mobility of the adatoms, equilibrium phases cannot form and metastable structures are observed. Reactive sputtering can be used to deposit films with different stoichiometries and structures in the W-N system. The metastable phases α-W. β-W. W2N and WN1−x are obtained. All coatings are, however, thermally unstable. At temperatures above 570 °C. all phases are transformed into the a-W modification. By alloying chromium to the coatings in the W-N system, it is possible to stabilize all tungsten and tungsten nitride modifications as well as the interface layer between the substrate and the thin films.

Sign in / Sign up

Export Citation Format

Share Document