Evaluation of Hole Trapping Characteristics in MONOS-Type Memories Using the Constant-Current Carrier Injection Method

2017 ◽  
Vol 75 (32) ◽  
pp. 73-82 ◽  
Author(s):  
Kaihei Kato ◽  
Sheikh Rashel Al Ahmed ◽  
Kiyoteru Kobayashi
Keyword(s):  
Current Carrier ◽  
Constant Current ◽  
Carrier Injection ◽  
Injection Method ◽  
Hole Trapping

Effects of Reverse Biased Floating Voltage at Source and Drain During High-Field Electron Injection on the Performance of NMOSFETS

1999 ◽  
Vol 592 ◽  
Author(s):  
R. K. Jarwal ◽  
D. Misra
Keyword(s):  
High Field ◽  
Electron Injection ◽  
Channel Length ◽  
Constant Current ◽  
Oxide Interfaces ◽  
Hole Trapping ◽  
Field Electron ◽  
Voltage Degradation ◽  
Effective Channel ◽  
Threshold Voltage Degradation

ABSTRACTWe have examined the effects of reverse biased floating voltage at the source and drain junctions during constant current high-field electron injection on the performance of NMOSFETs. Device parameter degradation was studied when electrons were injected from both gate and substrate. Hole trapping and electron trapping (observed from threshold voltage degradation) were found to be enhanced with reverse biased floating voltage for devices subjected to substrate injection. On the other hand, damages in the devices subjected to gate injection were found to be minimal dependent on reverse biased voltage. Increase in current density due to reduction in effective channel length is believed to be the cause of modified device characteristics. Transconductance degradation for both substrate injection and gate injection was found to have minimal dependence on reverse biased voltage. An asymmetry in the distribution of electron traps at the gate-oxide and substrate-oxide interfaces was observed.

Metastable Defects of Iron-Boron Pair in Silicon

1992 ◽  
Vol 262 ◽  
Author(s):  
H. Nakashima ◽  
T. Sadoh
Keyword(s):  
Minority Carrier ◽  
Electron Trapping ◽  
Annihilation Process ◽  
Carrier Injection ◽  
Transient Technique ◽  
Hole Trapping ◽  
Capacitance Transient

ABSTRACTWe have found configuratlonally metastable Fe-B pairs in Si by using dark or photo capacitance-transient technique combined with minority-carrier injection. The metastable pairs are observed as four electron-trapping levels at Ec-0.43 eV, 0.46 eV, 0.52 eV, and 0.54 eV and as two hole-trapping levels at Ev+0.53 eV and 0.48 eV after the injection at 150 K. The production of each level is investigated under various injection conditions, and the annihilation process is studied by isochronal anneals.

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