Experimental Extraction of the Charge Centroid in SiCN-Based Charge Trapping Memories Using the Constant-Current Carrier Injection Method

2017 ◽  
Vol 75 (32) ◽  
pp. 51-62 ◽  
Author(s):  
Sheikh Rashel Al Ahmed ◽  
Kaihei Kato ◽  
Kiyoteru Kobayashi
Keyword(s):  
Charge Trapping ◽  
Current Carrier ◽  
Constant Current ◽  
Carrier Injection ◽  
Injection Method

Rapid Thermal Oxidation of Lightly Doped Silicon in N2O

1994 ◽  
Vol 342 ◽  
Author(s):  
S.C. Sun ◽  
L.S. Wang ◽  
F.L. Yeh ◽  
T.S. Lai ◽  
Y.H. Lin
Keyword(s):  
Growth Rate ◽  
Thermal Oxidation ◽  
Charge Trapping ◽  
Interface State ◽  
Constant Current ◽  
Mos Capacitor ◽  
Rapid Thermal Oxidation ◽  
Doped Silicon ◽  
State Generation ◽  
First Time

ABSTRACTIn this paper, a detailed study is presented for the growth kinetics of rapid thermal oxidation of lightly-doped silicon in N2O and O2 on (100), (110), and (111) oriented substrates. It was found that (110)-oriented Si has the highest growth rate in both N2O and dry O2, and (100) Si has the lowest rate. There is no “crossover” on the growth rate of rapid thermal N2O oxidation between (110) Si and (111) Si as compared to oxides grown in furnace N2O. Pressure dependence of rapid thermal N2O oxidation is reported for the first time. MOS capacitor results show that the low-pressure (40 Torr) N2O-grown oxides have much less interface state generation and charge trapping under constant current stress as compared to oxides grown in either 760 Torr N2O or O2 ambient.

Ultrathin Gate Dielectric Growth at Reduced Pressure

1994 ◽  
Vol 342 ◽  
Author(s):  
Robert McIntosh ◽  
Carl Galewski ◽  
John Grant
Keyword(s):  
Gate Dielectric ◽  
Charge Trapping ◽  
Cmos Technology ◽  
Interface State ◽  
Constant Current ◽  
Reduced Pressure ◽  
Current Stress ◽  
Ultrathin Oxides ◽  
State Generation ◽  
Improved Characteristics

The Growth of ultrathin oxides in N2O ambient has been a subject of extensive research for submicron CMOS technology. Oxides grown in N2O tend to have a higher charge-to-breakdown, less charge trapping under constant current stress, and less interface state generation under current stress and radiation than conventional oxides grown in oxygen [1,2]. In addition the penetration of boron through N2O oxides is significantly less than through conventional thermal oxides [3]. The improved characteristics of N2O are due to an interfacial pileup of nitrogen atoms [1-3]. Thus the growth of thermal oxides in N2O provides a method for obtaining many of the more favorable aspects of reoxidized-nitrided silicon dioxides, with a much simpler process.

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