High Electron and Hole Mobility by Localized Tensile & Compressive Strain Formation Using Ion Implantation and Advanced Annealing of Group IV Materials (Si+C, Si+Ge & Ge+Sn)

2016 ◽  
Vol 75 (4) ◽  
pp. 199-211 ◽  
Author(s):  
J. O. Borland
Keyword(s):  
Ion Implantation ◽  
Compressive Strain ◽  
Hole Mobility ◽  
Group Iv ◽  
High Electron

Strain-engineering in AlGaN/GaN HEMTs: impact of silicon nitride passivation layer on electrical performance

2021 ◽  
Author(s):  
Sanghamitra Das ◽  
Taraprasanna Dash ◽  
Devika Jena ◽  
Eleena Mohapatra ◽  
C K Maiti
Keyword(s):  
Experimental Data ◽  
Compressive Strain ◽  
Cutoff Frequency ◽  
Strain Engineering ◽  
Electrical Performance ◽  
Current Gain ◽  
Great Promise ◽  
High Electron ◽  
Wide Range ◽  
Gan Hemts

Abstract In this work, we present a physics-based analysis of two-dimensional electron gas (2DEG) sheet carrier density and other microwave characteristics such as transconductance and cutoff frequency of AlxGa1-xN/GaN high electron mobility transistors (HEMT). An accurate polarization-dependent charge control-based analysis is performed for microwave performance assessment in terms of current, transconductance, gate capacitances, and cutoff frequency of lattice-mismatched AlGaN/GaN HEMTs. The influence of stress on spontaneous and piezoelectric polarization is included in the simulation of an AlGaN/GaN HEMT. We have shown the change in threshold voltage (Vt) due to tensile and compressive strain with different gate lengths. Also, the influence of stress due to the change in nitride thickness is presented. Our simulation results for drain current, transconductance, and current-gain cutoff frequency for various gate length devices are calibrated and verified with experimental data over a wide range of gate and drain applied voltages, which are expected to be useful for microwave circuit design. The predicted transconductance, drain conductance, and operation frequency are quite close to the experimental data. The AlGaN/GaN heterostructure HEMTs with nitride passivation layers show great promise as a candidate in future high speed and high power applications.

Hole gas accumulation in Si/Ge core–shell and Si/Ge/Si core–double shell nanowires

Nanoscale ◽  
2018 ◽  
Vol 10 (45) ◽  
pp. 21062-21068 ◽  
Author(s):  
Xiaolong Zhang ◽  
Wipakorn Jevasuwan ◽  
Ken C. Pradel ◽  
Thiyagu Subramani ◽  
Toshiaki Takei ◽  
...  
Keyword(s):  
Hole Mobility ◽  
Core Shell ◽  
High Electron ◽  
Electron Hole ◽  
Vapor Liquid Solid ◽  
Selective Doping ◽  
Sharp Interfaces ◽  
Growth Methods ◽  
Vapor Liquid Solid Growth ◽  
Shell Nanowires

p-Si/i-Ge core–shell and p-Si/i-Ge/p-Si core–double shell nanowires are fabricated using CVD with vapor–liquid–solid growth methods. Selective doping and sharp interfaces between the Si core and the Ge shell are achieved, which can provide a feasible design for realizing high electron (hole) mobility transistors.

Optical characterization of InAlAs/InGaAs metamorphic high-electron mobility transistor structures with tensile and compressive strain

2013 ◽  
Vol 529 ◽  
pp. 217-221 ◽  
Author(s):  
Ching-Hsiang Chan ◽  
Ching-Hwa Ho ◽  
Ming-Kai Chen ◽  
Yu-Shyan Lin ◽  
Ying-Sheng Huang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Compressive Strain ◽  
High Electron Mobility Transistor ◽  
Optical Characterization ◽  
High Electron ◽  
High Electron Mobility

Compressive strain dependence of hole mobility in strained Ge channels

2005 ◽  
Vol 87 (19) ◽  
pp. 192102 ◽  
Author(s):  
K. Sawano ◽  
Y. Abe ◽  
H. Satoh ◽  
Y. Shiraki ◽  
K. Nakagawa
Keyword(s):  
Compressive Strain ◽  
Hole Mobility ◽  
Strain Dependence

Hole mobility enhancement in strained nanocrystalline architecture of group IV semiconductors

2020 ◽  
Vol 821 ◽  
pp. 153212
Author(s):  
Sen Sun ◽  
Huanming Wang ◽  
Gang Xiang ◽  
Jiating Lu ◽  
Nan Qiu ◽  
...  
Keyword(s):  
Hole Mobility ◽  
Group Iv ◽  
Group Iv Semiconductors
Sign in / Sign up

Export Citation Format

Share Document