Cathodoluminescence and epitaxy after group-IV and alkali-ion implantation in α-quartz

2006 ◽  
Vol 249 (1-2) ◽  
pp. 109-113 ◽  
Author(s):  
P.K. Sahoo ◽  
S. Gasiorek ◽  
S. Dhar ◽  
K.P. Lieb
Keyword(s):  
Ion Implantation ◽  
Group Iv ◽  
Alkali Ion

A Comparison of Transient Boron Diffusion in Silicon, Silicon Carbide and Diamond

2008 ◽  
Vol 600-603 ◽  
pp. 453-456
Author(s):  
Margareta K. Linnarsson ◽  
J. Isberg ◽  
Adolf Schöner ◽  
Anders Hallén
Keyword(s):  
Mass Spectrometry ◽  
Silicon Carbide ◽  
Ion Implantation ◽  
Secondary Ion Mass Spectrometry ◽  
Synthetic Diamond ◽  
Group Iv ◽  
Boron Diffusion ◽  
Group Iv Semiconductors ◽  
Secondary Ion ◽  
Silicon Silicon

The boron diffusion in three kinds of group IV semiconductors: silicon, silicon carbide and synthetic diamond has been studied by secondary ion mass spectrometry. Ion implantation of 300 keV, 11B-ions to a dose of 21014 cm-2 has been performed. The samples are subsequently annealed at temperatures ranging from 800 to 1650 °C for 5 minutes up to 8 hours. In silicon and silicon carbide, the boron diffusion is attributed to a transient process and the level of out-diffusion is correlated to intrinsic carrier concentration. No transient, out-diffused, boron tail is revealed in diamond at these temperatures.

scholarly journals Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material

2016 ◽  
Vol 119 (18) ◽  
pp. 183102 ◽  
Author(s):  
Tuan T. Tran ◽  
David Pastor ◽  
Hemi H. Gandhi ◽  
Lachlan A. Smillie ◽  
Austin J. Akey ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Pulsed Laser ◽  
Group Iv ◽  
Laser Melting ◽  
Direct Bandgap

Synthesis of metastable group-IV alloy semiconductors by ion implantation and ion-beam-induced epitaxial crystallization

1996 ◽  
Vol 100-101 ◽  
pp. 498-502 ◽  
Author(s):  
N. Kobayashi ◽  
M. Hasegawa ◽  
N. Hayashi ◽  
H. Katsumata ◽  
Y. Makita ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Group Iv ◽  
Epitaxial Crystallization ◽  
Alloy Semiconductors

Semiconductor Nanocrystals formed in SiO2 by Ion Implantation

1994 ◽  
Vol 358 ◽  
Author(s):  
Jane G. Zhu ◽  
C. W. White ◽  
J. D. Budai ◽  
S. P. Withrow ◽  
Y. Chen
Keyword(s):  
Ion Implantation ◽  
Annealing Temperature ◽  
Semiconductor Nanocrystals ◽  
Spherical Shape ◽  
Group Iv ◽  
Semiconductor Materials ◽  
Size Distributions ◽  
Transmission Electron ◽  
Si Nanocrystals ◽  
Subsequent Thermal Annealing

ABSTRACTNanocrystals of group IV (Si, Ge and SiGe), III-V (GaAs), and II-VI (CdSe) semiconductor materials have been fabricated inside SiO2 by ion implantation and subsequent thermal annealing. The microstructure of these nanocrystalline semiconductor materials has been studied by transmission electron microscopy (TEM). The nanocrystals form in near-spherical shape with random crystal orientations in amorphous SiO2 Extensive studies on the nanocrystal size distributions have been carried out for the Ge nanocrystals by changing the implantation doses and the annealing temperatures. Remarkable roughening of the nanocrystals occurs when the annealing temperature is raised over the melting temperature of the implanted semiconductor material. Strong red photoluminescence peaked around 1.67 eV has been achieved in samples with Si nanocrystals in SiO2.

Group-IV-semiconductor quantum-dots in thermal SiO2 layer fabricated by hot-ion implantation technique: different wavelength photon emissions

2021 ◽  
Vol 60 (SB) ◽  
pp. SBBK08
Author(s):  
Tomohisa Mizuno ◽  
Rikito Kanazawa ◽  
Kazuhiro Yamamoto ◽  
Kohki Murakawa ◽  
Kazuma Yoshimizu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ion Implantation ◽  
Group Iv ◽  
Semiconductor Quantum Dots ◽  
Sio2 Layer ◽  
Implantation Technique ◽  
Group Iv Semiconductor
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