Growth and Electronic Transport in 9,10-Diphenylanthracene Single Crystals—An Organic Semiconductor of High Electron and Hole Mobility

2007 ◽  
Vol 19 (16) ◽  
pp. 2097-2101 ◽  
Author(s):  
A. K. Tripathi ◽  
M. Heinrich ◽  
T. Siegrist ◽  
J. Pflaum
2015 ◽  
Vol 2 (18) ◽  
pp. 1500423 ◽  
Author(s):  
Silvia Trabattoni ◽  
Luisa Raimondo ◽  
Marcello Campione ◽  
Daniele Braga ◽  
Vincent C. Holmberg ◽  
...  

AIP Advances ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 101332 ◽  
Author(s):  
Rajveer Jha ◽  
Shota Onishi ◽  
Ryuji Higashinaka ◽  
Tatsuma D. Matsuda ◽  
Raquel A. Ribeiro ◽  
...  

2003 ◽  
Vol 68 (1) ◽  
Author(s):  
B. Fisher ◽  
K. B. Chashka ◽  
L. Patlagan ◽  
G. Bazalitsky ◽  
G. M. Reisner

Nanoscale ◽  
2018 ◽  
Vol 10 (45) ◽  
pp. 21062-21068 ◽  
Author(s):  
Xiaolong Zhang ◽  
Wipakorn Jevasuwan ◽  
Ken C. Pradel ◽  
Thiyagu Subramani ◽  
Toshiaki Takei ◽  
...  

p-Si/i-Ge core–shell and p-Si/i-Ge/p-Si core–double shell nanowires are fabricated using CVD with vapor–liquid–solid growth methods. Selective doping and sharp interfaces between the Si core and the Ge shell are achieved, which can provide a feasible design for realizing high electron (hole) mobility transistors.


Author(s):  
Durga Prasad Karothu ◽  
Ghada Dushaq ◽  
Ejaz Ahmed ◽  
Luca Catalano ◽  
Mahmoud Rasras ◽  
...  

2020 ◽  
Vol 8 (43) ◽  
pp. 14996-15008
Author(s):  
Zhengsheng Qin ◽  
Can Gao ◽  
Wallace W. H. Wong ◽  
Moritz K. Riede ◽  
Tianyu Wang ◽  
...  

In this review, we give a timely summary of the current progress of molecular doped organic semiconductor single crystals in terms of material selection, crystal growth, resulting properties and device applications.


2015 ◽  
Vol 6 (1) ◽  
Author(s):  
Muhammad R. Niazi ◽  
Ruipeng Li ◽  
Er Qiang Li ◽  
Ahmad R. Kirmani ◽  
Maged Abdelsamie ◽  
...  

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