Compressive strain dependence of hole mobility in strained Ge channels

2005 ◽  
Vol 87 (19) ◽  
pp. 192102 ◽  
Author(s):  
K. Sawano ◽  
Y. Abe ◽  
H. Satoh ◽  
Y. Shiraki ◽  
K. Nakagawa
Keyword(s):  
Compressive Strain ◽  
Hole Mobility ◽  
Strain Dependence

Polycrystalline Germanium and Silicon-Germanium Alloys on Plastic for Realization of Thin-Film Transistors

2004 ◽  
Vol 814 ◽  
Author(s):  
B. Hekmatshoar ◽  
D. Shahrjerdi ◽  
S. Mohajerzadeh ◽  
A. Khakifirooz ◽  
M. Robertson ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Germanium ◽  
Thin Film Transistors ◽  
Ethylene Terephthalate ◽  
Compressive Strain ◽  
Hole Mobility ◽  
Poly Ethylene Terephthalate ◽  
Poly Ethylene ◽  
Si Content ◽  
Induced Crystallization

AbstractDevice-quality polycrystalline Ge layers have been grown on flexible poly-ethylene terephthalate (PET) substrates by means of stress-assisted Cu-induced crystallization at temperatures as low as 130°C and employed for fabrication of depletion-mode poly-Ge thin-film transistors (TFTs). These TFTs show an ON/OFF ratio of 104and an effective hole mobility of 110 cm2/Vs. The stress-assisted crystallization technique has been extended to crystallize SiGe alloys at low temperatures for possible fabrication of poly-SiGe TFTs on plastic. As a result, poly-Ge seeded poly-crystalline SiGe layers with 40% Si content are grown at a low annealing temperature of 180°C in the presence of 0.05% equivalent compressive strain.

scholarly journals Strain Modulation of Selectively and/or Globally Grown Ge Layers

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1421
Author(s):  
Yong Du ◽  
Guilei Wang ◽  
Yuanhao Miao ◽  
Buqing Xu ◽  
Ben Li ◽  
...  
Keyword(s):  
Growth Parameters ◽  
Compressive Strain ◽  
Hole Mobility ◽  
Bandgap Energy ◽  
Threading Dislocation ◽  
High Quality ◽  
Threading Dislocation Density ◽  
Novel Method ◽  
Pl Intensity ◽  
Strain Modulation

This article presents a novel method to grow a high-quality compressive-strain Ge epilayer on Si using the selective epitaxial growth (SEG) applying the RPCVD technique. The procedures are composed of a global growth of Ge layer on Si followed by a planarization using CMP as initial process steps. The growth parameters of the Ge layer were carefully optimized and after cycle-annealing treatments, the threading dislocation density (TDD) was reduced to 3 × 107 cm−2. As a result of this process, a tensile strain of 0.25% was induced, whereas the RMS value was as low as 0.81 nm. Later, these substrates were covered by an oxide layer and patterned to create trenches for selective epitaxy growth (SEG) of the Ge layer. In these structures, a type of compressive strain was formed in the SEG Ge top layer. The strain amount was −0.34%; meanwhile, the TDD and RMS surface roughness were 2 × 106 cm−2 and 0.68 nm, respectively. HRXRD and TEM results also verified the existence of compressive strain in selectively grown Ge layer. In contrast to the tensile strained Ge layer (globally grown), enhanced PL intensity by a factor of more than 2 is partially due to the improved material quality. The significantly high PL intensity is attributed to the improved crystalline quality of the selectively grown Ge layer. The change in direct bandgap energy of PL was observed, owing to the compressive strain introduced. Hall measurement shows that a selectively grown Ge layer possesses room temperature hole mobility up to 375 cm2/Vs, which is approximately 3 times larger than that of the Ge (132 cm2/Vs). Our work offers fundamental guidance for the growth of high-quality and compressive strain Ge epilayer on Si for future Ge-based optoelectronics integration applications.

scholarly journals Strain engineering and lattice vibration manipulation of atomically thin TaS2 films

RSC Advances ◽  
2020 ◽  
Vol 10 (28) ◽  
pp. 16718-16726
Author(s):  
Xing Wu ◽  
Yongqing Cai ◽  
Jihong Bian ◽  
Guohui Su ◽  
Chen Luo ◽  
...  
Keyword(s):  
Lattice Vibration ◽  
Compressive Strain ◽  
Strain Engineering ◽  
Sensitive Strain ◽  
Strain Dependence ◽  
Tantalum Sulfide

We observed lattice vibration modulation in strained mono- and few-layer tantalum sulfide. E1g and E2g exhibit sensitive strain dependence with the frequency of the former intensity increasing and the latter decreasing under a compressive strain.

Enhancement of photoluminescence and hole mobility in 1- to 5-layer InSe due to the top valence-band inversion: strain effect

Nanoscale ◽  
2018 ◽  
Vol 10 (24) ◽  
pp. 11441-11451 ◽  
Author(s):  
Meng Wu ◽  
Jun-jie Shi ◽  
Min Zhang ◽  
Yi-min Ding ◽  
Hui Wang ◽  
...  
Keyword(s):  
Valence Band ◽  
Compressive Strain ◽  
Hole Mobility ◽  
Strain Effect ◽  
Direct Bandgap ◽  
Band Inversion

The great enhancement of photoluminescence and hole mobility in few-layer InSe due to an indirect-to-direct bandgap transition under 6% compressive strain.

Polyhedral Oligomeric Silsesquioxane /Platelets Rich Plasma/Gelrite-Based Hydrogel Scaffold for Bone Tissue Engineering

2020 ◽  
Vol 26 (26) ◽  
pp. 3147-3160
Author(s):  
Saeedeh Ahmadipour ◽  
Jaleh Varshosaz ◽  
Batool Hashemibeni ◽  
Leila Safaeian ◽  
Maziar Manshaei
Keyword(s):  
Bone Fractures ◽  
Compressive Strain ◽  
Gelation Time ◽  
Polyhedral Oligomeric Silsesquioxane ◽  
Local Drug Delivery ◽  
Gelling Agent ◽  
Control Group ◽  
Hydrogel Scaffold ◽  
Alizarin Red ◽  
Oligomeric Silsesquioxane

Background: Polyhedral oligomeric silsesquioxane (POSS) is a monomer with silicon structure and an internal nanometric cage. Objective: The purpose of this study was to provide an injectable hydrogel that could be easily located in open or closed bone fractures and injuries, and also to reduce the possible risks of infections caused by bone graft either as an allograft or an autograft. Methods: Various formulations of temperature sensitive hydrogels containing hydroxyapatite, Gelrite, POSS and platelets rich plasma (PRP), such as the co-gelling agent and cell growth enhancer, were prepared. The hydrogels were characterized for their injectability, gelation time, phase transition temperature and viscosity. Other physical properties of the optimized formulation including compressive stress, compressive strain and Young’s modulus as mechanical properties, as well as storage and loss modulus, swelling ratio, biodegradation behavior and cell toxicity as rheometrical parameters were studied on human osteoblast MG-63 cells. Alizarin red tests were conducted to study the qualitative and quantitative osteogenic capability of the designed scaffold, and the cell adhesion to the scaffold was visualized by scanning electron microscopy. Results: The results demonstrated that the hydrogel scaffold mechanical force and injectability were 3.34±0.44 Mpa and 12.57 N, respectively. Moreover, the scaffold showed higher calcium granules production in alizarin red staining compared to the control group. The proliferation of the cells in G4.5H1P0.03PRP10 formulation was significantly higher than in other formulations (p<0.05). Conclusion: The optimized Gelrite/Hydroxyapatite/POSS/PRP hydrogel scaffold has useful impacts on osteoblasts activity, and may be beneficial for local drug delivery in complications including a break or bone loss.

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