scholarly journals Combined Surface-Activated Bonding Technique for Low-Temperature Cu/SiO2 Hybrid Bonding

2015 ◽  
Vol 69 (6) ◽  
pp. 79-88 ◽  
Author(s):  
R. He ◽  
M. Fujino ◽  
A. Yamauchi ◽  
T. Suga
Keyword(s):  
Low Temperature ◽  
Bonding Technique

TLP Bonding Technologies for Micro Joining and 3D Packaging

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 001221-001252 ◽  
Author(s):  
Kei Murayama ◽  
Mitsuhiro Aizawa ◽  
Mitsutoshi Higashi
Keyword(s):  
High Temperature ◽  
Melting Point ◽  
Low Temperature ◽  
Wafer Bonding ◽  
Bonding Process ◽  
Tlp Bonding ◽  
Hermetic Sealing ◽  
Low Temperature Bonding ◽  
Free Material ◽  
Bonding Technique

The bonding technique for High density Flip Chip(F.C.) packages requires a low temperature and a low stress process to have high reliability of the micro joining ,especially that for sensor MEMS packages requires hermetic sealing so as to ensure their performance. The Transient Liquid Phase (TLP) bonding, that is a kind of diffusion bonding is a technique that connects the low melting point material such as Indium to the higher melting point metal such as Gold by the isothermal solidification and high-melting-point intermetallic compounds are formed. Therefore, it is a unique joining technique that can achieve not only the low temperature bonding and also the high temperature reliability. The Gold-Indium TLP bonding technique can join parts at 180 degree C and after bonding the melting point of the junction is shifted to more than 495 degree C, therefore itfs possible to apply the low temperature bonding lower than the general use as a lead free material such as a SAC and raise the melting point more than AuSn solder which is used for the high temperature reliability usage. Therefore, the heat stress caused by bonding process can be expected to be lowered. We examined wafer bonding and F.C bonding plus annealing technique by using electroplated Indium and Gold as a joint material. We confirmed that the shear strength obtained at the F.C. bonding plus anneal technique was equal with that of the wafer bonding process. Moreover, it was confirmed to ensure sufficient hermetic sealing in silicon cavity packages that had been bonded at 180 degree C. And the difference of the thermal stress that affect to the device by the bonding process was confirmed. In this paper, we report on various possible application of the TLP bonding.

Low-Temperature Indium Bonding for MEMS Devices

2012 ◽  
Vol 2012 (DPC) ◽  
pp. 002543-002566
Author(s):  
Daniel Harris ◽  
Robert Dean ◽  
Ashish Palkar ◽  
Mike Palmer ◽  
Charles Ellis ◽  
...  
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Room Temperature ◽  
Electron Beam Evaporation ◽  
Mems Devices ◽  
Microfabrication Technique ◽  
Mems Device ◽  
Low Temperature Bonding ◽  
Bonding Technique ◽  
Si Wafer

Low–temperature bonding techniques are of great importance in fabricating MEMS devices, and especially for sealing microfluidic MEMS devices that require encapsulation of a liquid. Although fusion, thermocompression, anodic and eutectic bonding have been successfully used in fabricating MEMS devices, they require temperatures higher than the boiling point of commonly used fluids in MEMS devices such as water, alcohols and ammonia. Although adhesives and glues have been successfully used in this application, they may contaminate the fluid in the MEMS device or the fluid may prevent suitable bonding. Indium (In) possesses the unusual property of being cold weldable. At room temperature, two sufficiently clean In surfaces can be cold welded by bringing them into contact with sufficient force. The bonding technique developed here consists of coating and patterning one Si wafer with 500A Ti, 300A Ni and 1 μm In through electron beam evaporation. A second wafer is metallized and patterned with a 500A Ti and 1 μm Cu by electron beam evaporation and then electroplated with 10 μm of In. Before the In coated sections are brought into contact, the In surfaces are chemically cleaned to remove indium-oxide. Then the sections are brought into contact and held under sufficient pressure to cold weld the sections together. Using this technique, MEMS water-filled and mercury-filled microheatpipes were successfully fabricated and tested. Additionally, this microfabrication technique is useful for fabricating other types of MEMS devices that are limited to low-temperature microfabrication processes.

Low-temperature bonding technique for fabrication of high-power GaN-based blue vertical light-emitting diodes

2012 ◽  
Vol 34 (8) ◽  
pp. 1327-1329 ◽  
Author(s):  
Wen-Jie Liu ◽  
Xiao-Long Hu ◽  
Jiang-Yong Zhang ◽  
Guo-En Weng ◽  
Xue-Qin Lv ◽  
...  
Keyword(s):  
Low Temperature ◽  
High Power ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Temperature Bonding ◽  
Bonding Technique

Combined Surface Activated Bonding Technique for Low-Temperature Cu/Dielectric Hybrid Bonding

2016 ◽  
Vol 5 (7) ◽  
pp. P419-P424 ◽  
Author(s):  
Ran He ◽  
Masahisa Fujino ◽  
Akira Yamauchi ◽  
Yinghui Wang ◽  
Tadatomo Suga
Keyword(s):  
Low Temperature ◽  
Bonding Technique

scholarly journals Optimization of Binder for Improving Strength and Shatter Index of Briquettes for BOF Dust using Design of Experiments

2019 ◽  
Vol 9 (1) ◽  
pp. 6282-6287
Keyword(s):  
Low Temperature ◽  
Design Of Experiments ◽  
Room Temperature ◽  
Waste Utilization ◽  
Taguchi Technique ◽  
Plant Waste ◽  
Minimum Number ◽  
Cold Bonding ◽  
Bonding Technique ◽  
Selection Of

Effectiveness of Recycling of steel plant waste is very much dependent on agglomeration technique. Sintering, pelletization and briquetting are some of the techniques which are frequently used for waste utilization. Aim of this study is to prepare composite briquettes by cold bonding technique, by which phsico-chemical changesoccurred at room temperature or low temperature. Two binders are mixed in proportion to achieve the required properties specifically strength and shatter index. The design of experiments is used to find the proper combination of binders to get the optimum value of properties. Experimental work for the same is carried out in such a way that minimum number of experiment can give output as desired. For this ‘Design of Experiment’ methodology is applied to select the runs of experiment. After the selection of orthogonal array and experiment combinations, Taguchi technique is used with two variable (starch and molasses) and three levels (2.5%, 5% and 7.5% of each) i.e. L9 Array to analyze the results. Minitab15 software is used. Conclusion and comments are based on the same.

15-µm-pitch Cu/Au interconnections relied on self-aligned low-temperature thermosonic flip-chip bonding technique for advanced chip stacking applications

2014 ◽  
Vol 53 (4S) ◽  
pp. 04EB04 ◽  
Author(s):  
Bui Thanh Tung ◽  
Fumiki Kato ◽  
Naoya Watanabe ◽  
Shunsuke Nemoto ◽  
Katsuya Kikuchi ◽  
...  
Keyword(s):  
Low Temperature ◽  
Flip Chip ◽  
Flip Chip Bonding ◽  
Bonding Technique

Cu-Cu Thermocompression Bonding using Ultra Precision Cutting of Cu Bumps for 3D-SIC

2011 ◽  
Vol 2011 (DPC) ◽  
pp. 001316-001341 ◽  
Author(s):  
Taiji Sakai ◽  
Akamatsu Toshiya ◽  
Nobuhiro Imaizumi ◽  
Miyajima Toyoo ◽  
Masataka Mizukoshi
Keyword(s):  
Low Temperature ◽  
Single Crystal ◽  
Crystal Orientation ◽  
Solid Diffusion ◽  
Single Crystal Diamond ◽  
Thermocompression Bonding ◽  
Ultra Precision ◽  
Kirkendall Voids ◽  
Solid Liquid ◽  
Bonding Technique

We have developed a new Cu-Cu thermocompression bonding technique by using cut Cu bumps in order to achieve high density 3D-stacked IC (3D-SIC). Currently, Sn layer is formed between Cu bumps, and then solid-liquid bonding is made by tin melting to connect Cu bumps. But using Sn layer can cause undesirable issues, such as electro-migration and Kirkendall voids formation between Cu/Sn interfaces, which could decrease bonding reliability. Therefore we believe that Cu-Cu thermocompression bonding is an essential technology especially in 3D interconnection. In the present study, cut Cu bumps were obtained by ultra-precision cutting using a single crystal diamond bite that would give a highly smooth Cu surface (Ra:7nm). A major advantage of cut Cu bumps is that they have an amorphous-like layer on the surface. In TEM observation, it was found that about 120nm thick amorphous-like layer was formed after cutting of Cu bumps. This layer has a potential to connect bumps each other at a low temperature similar to solder bonding because amorphous-like layer accelerates a recrystallization reaction of Cu crystal. Cut Cu bumps on both sides of LSI and substrate have been successfully bonded at 250 degrees C condition. From the analysis of crystal orientation by EBSD, it was found that the bonding interface had disappeared, which means solid diffusion was occurred and crystal grain grew across the interface.

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