Low-Temperature Indium Bonding for MEMS Devices

2012 ◽  
Vol 2012 (DPC) ◽  
pp. 002543-002566
Author(s):  
Daniel Harris ◽  
Robert Dean ◽  
Ashish Palkar ◽  
Mike Palmer ◽  
Charles Ellis ◽  
...  
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Room Temperature ◽  
Electron Beam Evaporation ◽  
Mems Devices ◽  
Microfabrication Technique ◽  
Mems Device ◽  
Low Temperature Bonding ◽  
Bonding Technique ◽  
Si Wafer

Low–temperature bonding techniques are of great importance in fabricating MEMS devices, and especially for sealing microfluidic MEMS devices that require encapsulation of a liquid. Although fusion, thermocompression, anodic and eutectic bonding have been successfully used in fabricating MEMS devices, they require temperatures higher than the boiling point of commonly used fluids in MEMS devices such as water, alcohols and ammonia. Although adhesives and glues have been successfully used in this application, they may contaminate the fluid in the MEMS device or the fluid may prevent suitable bonding. Indium (In) possesses the unusual property of being cold weldable. At room temperature, two sufficiently clean In surfaces can be cold welded by bringing them into contact with sufficient force. The bonding technique developed here consists of coating and patterning one Si wafer with 500A Ti, 300A Ni and 1 μm In through electron beam evaporation. A second wafer is metallized and patterned with a 500A Ti and 1 μm Cu by electron beam evaporation and then electroplated with 10 μm of In. Before the In coated sections are brought into contact, the In surfaces are chemically cleaned to remove indium-oxide. Then the sections are brought into contact and held under sufficient pressure to cold weld the sections together. Using this technique, MEMS water-filled and mercury-filled microheatpipes were successfully fabricated and tested. Additionally, this microfabrication technique is useful for fabricating other types of MEMS devices that are limited to low-temperature microfabrication processes.

scholarly journals CHARACTERISTICS OF LITHIUM LANTHANUM TITANATE THIN FILMS MADE BY ELECTRON BEAM EVAPORATION FROM NANOSTRUCTURED La0.67-xLi 3xTiO3 TARGET

2017 ◽  
Vol 25 (2) ◽  
pp. 243-250
Author(s):  
Nguyen Nang Dinh ◽  
Le Dinh Trong ◽  
Pham Duy Long
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ionic Conductivity ◽  
Room Temperature ◽  
Xrd Analysis ◽  
Electron Beam Evaporation ◽  
Electrochromic Devices ◽  
Lanthanum Titanate ◽  
Average Size ◽  
Beam Deposition

Bulk nanostructured perovskites of La0.67-xLi3xTiO3 (LLTO) were prepared by using thermally ball-grinding from compounds of La2O3, Li2CO3 and TiO2. From XRD analysis, it was found that LTTO materials were crystallized with nano-size grains of an average size of 30 nm. The bulk ionic conductivity was found strongly dependent on the Li+ composition, the samples with x = 0.11 (corresponding to a La0.56Li0.33TiO3 compound) have the best ionic conductivity, which is ca. 3.2 x 10-3 S/cm at room temperature. The LLTO amorphous films were made by electron beam deposition. At room temperature the smooth films have ionic conductivity of 3.5 x 10-5  S/cm and transmittance of 80%. The optical bandgap of the films was found to be of 2.3 eV. The results have shown that the perovskite La0.56Li0.33TiO3  thin films can be used for a transparent solid electrolyte in ionic battery and in all-solid-state electrochromic devices, in particular.    

Low Temperature Deposited High Quality ITO Films Prepared by E-Beam Evaporation

1990 ◽  
Vol 187 ◽  
Author(s):  
C. S. Chang ◽  
J. C. Wang ◽  
L. C. Kuo
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Optimal Condition ◽  
Deposition Rate ◽  
Oxygen Pressure ◽  
Electron Beam Evaporation ◽  
Film Properties ◽  
High Quality ◽  
Ito Films

AbstractAn electron beam evaporation method has been used to prepare tin doped indium oxide (ITO) films with 95 wt.% In2O3 and 5 wt.% SnO2 in an oxygen atmosphere. It was found that the deposition rate and oxygen pressure strongly influence the film properties when the substrate temperature was lower than 200°C. In an optimal condition, highly transparent (transmittance ˜ 90% at wavelength 570 nm) and conductive (resistivity – 3×10−4Ω-cm) films of thickness around 2000 Å at substrate temperature as low as 180°C can be obtained.

TLP Bonding Technologies for Micro Joining and 3D Packaging

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 001221-001252 ◽  
Author(s):  
Kei Murayama ◽  
Mitsuhiro Aizawa ◽  
Mitsutoshi Higashi
Keyword(s):  
High Temperature ◽  
Melting Point ◽  
Low Temperature ◽  
Wafer Bonding ◽  
Bonding Process ◽  
Tlp Bonding ◽  
Hermetic Sealing ◽  
Low Temperature Bonding ◽  
Free Material ◽  
Bonding Technique

The bonding technique for High density Flip Chip(F.C.) packages requires a low temperature and a low stress process to have high reliability of the micro joining ,especially that for sensor MEMS packages requires hermetic sealing so as to ensure their performance. The Transient Liquid Phase (TLP) bonding, that is a kind of diffusion bonding is a technique that connects the low melting point material such as Indium to the higher melting point metal such as Gold by the isothermal solidification and high-melting-point intermetallic compounds are formed. Therefore, it is a unique joining technique that can achieve not only the low temperature bonding and also the high temperature reliability. The Gold-Indium TLP bonding technique can join parts at 180 degree C and after bonding the melting point of the junction is shifted to more than 495 degree C, therefore itfs possible to apply the low temperature bonding lower than the general use as a lead free material such as a SAC and raise the melting point more than AuSn solder which is used for the high temperature reliability usage. Therefore, the heat stress caused by bonding process can be expected to be lowered. We examined wafer bonding and F.C bonding plus annealing technique by using electroplated Indium and Gold as a joint material. We confirmed that the shear strength obtained at the F.C. bonding plus anneal technique was equal with that of the wafer bonding process. Moreover, it was confirmed to ensure sufficient hermetic sealing in silicon cavity packages that had been bonded at 180 degree C. And the difference of the thermal stress that affect to the device by the bonding process was confirmed. In this paper, we report on various possible application of the TLP bonding.

Effect of Ni film structure and surface morphology on the growth of graphene by PECVD

2018 ◽  
Vol 11 (01) ◽  
pp. 1850011
Author(s):  
Lipeng Ren ◽  
Wei Wang ◽  
Chenglei Yu ◽  
Saisai Duan ◽  
Wenjing Ma ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Particle Size ◽  
Electron Beam ◽  
Low Temperature ◽  
Surface Morphology ◽  
Silicon Substrate ◽  
Amorphous State ◽  
Electron Beam Evaporation ◽  
Film Structure ◽  
Bilayer Structure

In this work, Ni films with the thickness of 50[Formula: see text]nm were deposited on (110) silicon substrate by electron beam evaporation at the temperature of 125[Formula: see text]C, 300[Formula: see text]C and 500[Formula: see text]C. Graphene was prepared on Ni films by PECVD to study the effect of Ni film structure and surface morphology on the graphene grown by PECVD. The result shows that the particle size and surface roughness of Ni film increase, as the temperature of substrate go up. The Ni film deposited at 125[Formula: see text]C exhibits amorphous state, and the Ni films deposited at 300[Formula: see text]C and 500[Formula: see text]C exhibit (111) microcrystal structure. The graphene grown on the microcrystalline Ni film deposited at 300[Formula: see text]C is the bilayer structure with less defects and uniform morphology. The graphene prepared on the microcrystalline Ni film deposited at 500[Formula: see text]C has more defects, layers and obvious plane undulation. The analysis indicates that microcrystalline Ni film deposited at 300[Formula: see text]C can be used by PECVD at low temperature to prepare a bilayer graphene with less defects and uniform morphology.

scholarly journals Low-temperature, high-speed reactive deposition of metal oxides for perovskite solar cells

2019 ◽  
Vol 7 (5) ◽  
pp. 2283-2290 ◽  
Author(s):  
Thomas J. Routledge ◽  
Michael Wong-Stringer ◽  
Onkar S. Game ◽  
Joel A. Smith ◽  
James E. Bishop ◽  
...  
Keyword(s):  
Electron Beam ◽  
Solar Cells ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Metal Oxides ◽  
High Speed ◽  
Perovskite Solar Cells ◽  
Electron Beam Evaporation ◽  
Reactive Deposition ◽  
Charge Extraction

Perovskite solar cells utilising NiO and TiO2 charge-extraction layers, deposited via high-speed, low substrate-temperature reactive electron-beam evaporation, achieve 15.8% PCE.

Optimization of TiO 2 /Cu/TiO 2 multilayers as a transparent composite electrode deposited by electron-beam evaporation at room temperature

2015 ◽  
Vol 24 (4) ◽  
pp. 047701 ◽  
Author(s):  
Hong-Tao Sun ◽  
Xiao-Ping Wang ◽  
Zhi-Qi Kou ◽  
Li-Jun Wang ◽  
Jin-Ye Wang ◽  
...  
Keyword(s):  
Electron Beam ◽  
Room Temperature ◽  
Composite Electrode ◽  
Electron Beam Evaporation ◽  
Transparent Composite

scholarly journals Effect of Annealing Temperature on CuInSe2/ZnS Thin-Film Solar Cells Fabricated by Using Electron Beam Evaporation

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
H. Abdullah ◽  
S. Habibi
Keyword(s):  
Electron Beam ◽  
Solar Cells ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Electron Beam Evaporation ◽  
Thin Film Solar Cells ◽  
X Ray ◽  
Annealing Temperatures ◽  
Pure Cu ◽  
Deposited Films

CuInSe2(CIS) thin films are successfully prepared by electron beam evaporation. Pure Cu, In, and Se powders were mixed and ground in a grinder and made into a pellet. The pallets were deposited via electron beam evaporation on FTO substrates and were varied by varying the annealing temperatures, at room temperature, 250°C, 300°C, and 350°C. Samples were analysed by X-ray diffractometry (XRD) for crystallinity and field-emission scanning electron microscopy (FESEM) for grain size and thickness. I-V measurements were used to measure the efficiency of the CuInSe2/ZnS solar cells. XRD results show that the crystallinity of the films improved as the temperature was increased. The temperature dependence of crystallinity indicates polycrystalline behaviour in the CuInSe2films with (1 1 1), (2 2 0)/(2 0 4), and (3 1 2)/(1 1 6) planes at 27°, 45°, and 53°, respectively. FESEM images show the homogeneity of the CuInSe2formed. I-V measurements indicated that higher annealing temperatures increase the efficiency of CuInSe2solar cells from approximately 0.99% for the as-deposited films to 1.12% for the annealed films. Hence, we can conclude that the overall cell performance is strongly dependent on the annealing temperature.

Low-temperature bonding technique for fabrication of high-power GaN-based blue vertical light-emitting diodes

2012 ◽  
Vol 34 (8) ◽  
pp. 1327-1329 ◽  
Author(s):  
Wen-Jie Liu ◽  
Xiao-Long Hu ◽  
Jiang-Yong Zhang ◽  
Guo-En Weng ◽  
Xue-Qin Lv ◽  
...  
Keyword(s):  
Low Temperature ◽  
High Power ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Temperature Bonding ◽  
Bonding Technique

scholarly journals Optimization of Binder for Improving Strength and Shatter Index of Briquettes for BOF Dust using Design of Experiments

2019 ◽  
Vol 9 (1) ◽  
pp. 6282-6287
Keyword(s):  
Low Temperature ◽  
Design Of Experiments ◽  
Room Temperature ◽  
Waste Utilization ◽  
Taguchi Technique ◽  
Plant Waste ◽  
Minimum Number ◽  
Cold Bonding ◽  
Bonding Technique ◽  
Selection Of

Effectiveness of Recycling of steel plant waste is very much dependent on agglomeration technique. Sintering, pelletization and briquetting are some of the techniques which are frequently used for waste utilization. Aim of this study is to prepare composite briquettes by cold bonding technique, by which phsico-chemical changesoccurred at room temperature or low temperature. Two binders are mixed in proportion to achieve the required properties specifically strength and shatter index. The design of experiments is used to find the proper combination of binders to get the optimum value of properties. Experimental work for the same is carried out in such a way that minimum number of experiment can give output as desired. For this ‘Design of Experiment’ methodology is applied to select the runs of experiment. After the selection of orthogonal array and experiment combinations, Taguchi technique is used with two variable (starch and molasses) and three levels (2.5%, 5% and 7.5% of each) i.e. L9 Array to analyze the results. Minitab15 software is used. Conclusion and comments are based on the same.

Dislocation Structures in Deformed Tin Single Crystals

1982 ◽  
Vol 40 ◽  
pp. 468-469
Author(s):  
G.W. Qiao
Keyword(s):  
Plastic Deformation ◽  
Electron Beam ◽  
Low Temperature ◽  
Single Crystals ◽  
Current Density ◽  
Perchloric Acid ◽  
Room Temperature ◽  
High Mobility ◽  
Tetragonal Structure ◽  
Methanol Mixture

Although β-tin is a familiar metal with tetragonal structure, its dislocation structures in bulk specimens after plastic deformation or irradiation have not been reported with observations by TEM probably because of difficulties in preparing specimens and the relatively high mobility of dislocations under electron beam illumination at room temperature (T/Tm~0.7). It proved possible to prepare specimens of β-tin for TEM observation using low temperature, double-jet electro-polishing techniques using 8% perchloric acid in methanol mixture at -30 °C under 80 volts and a typical current density of 0.7 Acm-2.

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