Integration of RF-MEMS, passives and CMOS-IC on silicon substrate by low temperature wafer to wafer bonding technique

2008 ◽  
Author(s):  
Q. X. Zhang ◽  
H. Y. Li ◽  
M. Tang ◽  
A. B. Yu ◽  
E. B. Liao ◽  
...  
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Silicon Substrate ◽  
Rf Mems ◽  
Cmos Ic ◽  
Bonding Technique

TLP Bonding Technologies for Micro Joining and 3D Packaging

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 001221-001252 ◽  
Author(s):  
Kei Murayama ◽  
Mitsuhiro Aizawa ◽  
Mitsutoshi Higashi
Keyword(s):  
High Temperature ◽  
Melting Point ◽  
Low Temperature ◽  
Wafer Bonding ◽  
Bonding Process ◽  
Tlp Bonding ◽  
Hermetic Sealing ◽  
Low Temperature Bonding ◽  
Free Material ◽  
Bonding Technique

The bonding technique for High density Flip Chip(F.C.) packages requires a low temperature and a low stress process to have high reliability of the micro joining ,especially that for sensor MEMS packages requires hermetic sealing so as to ensure their performance. The Transient Liquid Phase (TLP) bonding, that is a kind of diffusion bonding is a technique that connects the low melting point material such as Indium to the higher melting point metal such as Gold by the isothermal solidification and high-melting-point intermetallic compounds are formed. Therefore, it is a unique joining technique that can achieve not only the low temperature bonding and also the high temperature reliability. The Gold-Indium TLP bonding technique can join parts at 180 degree C and after bonding the melting point of the junction is shifted to more than 495 degree C, therefore itfs possible to apply the low temperature bonding lower than the general use as a lead free material such as a SAC and raise the melting point more than AuSn solder which is used for the high temperature reliability usage. Therefore, the heat stress caused by bonding process can be expected to be lowered. We examined wafer bonding and F.C bonding plus annealing technique by using electroplated Indium and Gold as a joint material. We confirmed that the shear strength obtained at the F.C. bonding plus anneal technique was equal with that of the wafer bonding process. Moreover, it was confirmed to ensure sufficient hermetic sealing in silicon cavity packages that had been bonded at 180 degree C. And the difference of the thermal stress that affect to the device by the bonding process was confirmed. In this paper, we report on various possible application of the TLP bonding.

A low-temperature wafer bonding technique using patternable materials

2002 ◽  
Vol 12 (5) ◽  
pp. 611-615 ◽  
Author(s):  
C-T Pan ◽  
H Yang ◽  
S-C Shen ◽  
M-C Chou ◽  
H-P Chou
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Bonding Technique

Combined surface-activated bonding technique for low-temperature hydrophilic direct wafer bonding

2016 ◽  
Vol 55 (4S) ◽  
pp. 04EC02 ◽  
Author(s):  
Ran He ◽  
Masahisa Fujino ◽  
Akira Yamauchi ◽  
Tadatomo Suga
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Direct Wafer Bonding ◽  
Bonding Technique

Study of Low-Temperature Wafer Bonding With Au-Au Bonding Technique

2008 ◽  
Author(s):  
H. Kurotaki ◽  
H. Shinohara ◽  
H. Kobayashi ◽  
J. Mizuno ◽  
S. Shoji
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Diffusion Bonding ◽  
Low Temperatures ◽  
The Other ◽  
High Brightness ◽  
Metal Bonding ◽  
Metal Diffusion ◽  
Integrated Devices ◽  
Bonding Technique

In general, metal diffusion bonding is carried out at a temperature in the range of 300 ∼ 400 °C and is well documented [1]. However, the knowledge of metal bonding at low temperatures below 300 °C is inadequate yet. On the other hand, low temperature metal bonding is of importance in realizing advanced integrated devices such as MEMS-Semiconductors and high-brightness LED. This paper reports the results of a feasibility study of low-temperature metal bonding with the use of Au-Au diffusion bonding technique.

High Precision Low Temperature Direct Wafer Bonding Technology for Wafer-Level 3D ICs Manufacturing

2016 ◽  
Vol 75 (9) ◽  
pp. 345-353 ◽  
Author(s):  
F. Kurz ◽  
T. Plach ◽  
J. Suss ◽  
T. Wagenleitner ◽  
D. Zinner ◽  
...  
Keyword(s):  
Low Temperature ◽  
High Precision ◽  
Wafer Bonding ◽  
Wafer Level ◽  
3D Ics ◽  
Direct Wafer Bonding ◽  
Bonding Technology

Low temperature GaAs/Si direct wafer bonding

2000 ◽  
Vol 36 (7) ◽  
pp. 677 ◽  
Author(s):  
M. Alexe ◽  
V. Dragoi ◽  
M. Reiche ◽  
U. Gösele
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Direct Wafer Bonding ◽  
Low Temperature Gaas
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