Low-temperature bonding technique for high-gradient normal conducting accelerator structures

2021 ◽  
Author(s):  
ron agustsson
Keyword(s):  
Low Temperature ◽  
High Gradient ◽  
Low Temperature Bonding ◽  
Bonding Technique

TLP Bonding Technologies for Micro Joining and 3D Packaging

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 001221-001252 ◽  
Author(s):  
Kei Murayama ◽  
Mitsuhiro Aizawa ◽  
Mitsutoshi Higashi
Keyword(s):  
High Temperature ◽  
Melting Point ◽  
Low Temperature ◽  
Wafer Bonding ◽  
Bonding Process ◽  
Tlp Bonding ◽  
Hermetic Sealing ◽  
Low Temperature Bonding ◽  
Free Material ◽  
Bonding Technique

The bonding technique for High density Flip Chip(F.C.) packages requires a low temperature and a low stress process to have high reliability of the micro joining ,especially that for sensor MEMS packages requires hermetic sealing so as to ensure their performance. The Transient Liquid Phase (TLP) bonding, that is a kind of diffusion bonding is a technique that connects the low melting point material such as Indium to the higher melting point metal such as Gold by the isothermal solidification and high-melting-point intermetallic compounds are formed. Therefore, it is a unique joining technique that can achieve not only the low temperature bonding and also the high temperature reliability. The Gold-Indium TLP bonding technique can join parts at 180 degree C and after bonding the melting point of the junction is shifted to more than 495 degree C, therefore itfs possible to apply the low temperature bonding lower than the general use as a lead free material such as a SAC and raise the melting point more than AuSn solder which is used for the high temperature reliability usage. Therefore, the heat stress caused by bonding process can be expected to be lowered. We examined wafer bonding and F.C bonding plus annealing technique by using electroplated Indium and Gold as a joint material. We confirmed that the shear strength obtained at the F.C. bonding plus anneal technique was equal with that of the wafer bonding process. Moreover, it was confirmed to ensure sufficient hermetic sealing in silicon cavity packages that had been bonded at 180 degree C. And the difference of the thermal stress that affect to the device by the bonding process was confirmed. In this paper, we report on various possible application of the TLP bonding.

Low-Temperature Indium Bonding for MEMS Devices

2012 ◽  
Vol 2012 (DPC) ◽  
pp. 002543-002566
Author(s):  
Daniel Harris ◽  
Robert Dean ◽  
Ashish Palkar ◽  
Mike Palmer ◽  
Charles Ellis ◽  
...  
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Room Temperature ◽  
Electron Beam Evaporation ◽  
Mems Devices ◽  
Microfabrication Technique ◽  
Mems Device ◽  
Low Temperature Bonding ◽  
Bonding Technique ◽  
Si Wafer

Low–temperature bonding techniques are of great importance in fabricating MEMS devices, and especially for sealing microfluidic MEMS devices that require encapsulation of a liquid. Although fusion, thermocompression, anodic and eutectic bonding have been successfully used in fabricating MEMS devices, they require temperatures higher than the boiling point of commonly used fluids in MEMS devices such as water, alcohols and ammonia. Although adhesives and glues have been successfully used in this application, they may contaminate the fluid in the MEMS device or the fluid may prevent suitable bonding. Indium (In) possesses the unusual property of being cold weldable. At room temperature, two sufficiently clean In surfaces can be cold welded by bringing them into contact with sufficient force. The bonding technique developed here consists of coating and patterning one Si wafer with 500A Ti, 300A Ni and 1 μm In through electron beam evaporation. A second wafer is metallized and patterned with a 500A Ti and 1 μm Cu by electron beam evaporation and then electroplated with 10 μm of In. Before the In coated sections are brought into contact, the In surfaces are chemically cleaned to remove indium-oxide. Then the sections are brought into contact and held under sufficient pressure to cold weld the sections together. Using this technique, MEMS water-filled and mercury-filled microheatpipes were successfully fabricated and tested. Additionally, this microfabrication technique is useful for fabricating other types of MEMS devices that are limited to low-temperature microfabrication processes.

Low-temperature bonding technique for fabrication of high-power GaN-based blue vertical light-emitting diodes

2012 ◽  
Vol 34 (8) ◽  
pp. 1327-1329 ◽  
Author(s):  
Wen-Jie Liu ◽  
Xiao-Long Hu ◽  
Jiang-Yong Zhang ◽  
Guo-En Weng ◽  
Xue-Qin Lv ◽  
...  
Keyword(s):  
Low Temperature ◽  
High Power ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Temperature Bonding ◽  
Bonding Technique

The silicon on diamond structure by low-temperature bonding technique

2015 ◽  
Author(s):  
Sethavut Duangchan ◽  
Yusuke Uchikawa ◽  
Yusuke Koishikawa ◽  
Baba Akiyoshi ◽  
Kentaro Nakagawa ◽  
...  
Keyword(s):  
Low Temperature ◽  
Diamond Structure ◽  
Low Temperature Bonding ◽  
Bonding Technique

scholarly journals Low-Temperature Bonding Technique Using Sub-Micron Au Particles

2007 ◽  
Vol 10 (7) ◽  
pp. 560-566 ◽  
Author(s):  
Toshinori OGASHIWA ◽  
Tadahiro SHIBUTANI ◽  
Masayuki MIYAIRI ◽  
Yoshitomo FUJISAWA ◽  
Kazunori TSURUMI ◽  
...  
Keyword(s):  
Low Temperature ◽  
Low Temperature Bonding ◽  
Bonding Technique

scholarly journals Interfacial Reactions and Mechanical Properties of Sn–58Bi Solder Joints with Ag Nanoparticles Prepared Using Ultra-Fast Laser Bonding

Materials ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 335
Author(s):  
Gyuwon Jeong ◽  
Dong-Yurl Yu ◽  
Seongju Baek ◽  
Junghwan Bang ◽  
Tae-Ik Lee ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Low Temperature ◽  
Printed Circuit Boards ◽  
Solder Joints ◽  
Interfacial Reactions ◽  
Circuit Boards ◽  
Ag Nps ◽  
Laser Bonding ◽  
Laser Soldering ◽  
Low Temperature Bonding

The effects of Ag nanoparticle (Ag NP) addition on interfacial reaction and mechanical properties of Sn–58Bi solder joints using ultra-fast laser soldering were investigated. Laser-assisted low-temperature bonding was used to solder Sn–58Bi based pastes, with different Ag NP contents, onto organic surface preservative-finished Cu pads of printed circuit boards. The solder joints after laser bonding were examined to determine the effects of Ag NPs on interfacial reactions and intermetallic compounds (IMCs) and high-temperature storage tests performed to investigate its effects on the long-term reliabilities of solder joints. Their mechanical properties were also assessed using shear tests. Although the bonding time of the laser process was shorter than that of a conventional reflow process, Cu–Sn IMCs, such as Cu6Sn5 and Cu3Sn, were well formed at the interface of the solder joint. The addition of Ag NPs also improved the mechanical properties of the solder joints by reducing brittle fracture and suppressing IMC growth. However, excessive addition of Ag NPs degraded the mechanical properties due to coarsened Ag3Sn IMCs. Thus, this research predicts that the laser bonding process can be applied to low-temperature bonding to reduce thermal damage and improve the mechanical properties of Sn–58Bi solders, whose microstructure and related mechanical properties can be improved by adding optimal amounts of Ag NPs.

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