Dielectric/Si Interface Quality Characterization Using Room Temperature Photoluminescence

2014 ◽  
Vol 61 (2) ◽  
pp. 161-167 ◽  
Author(s):  
W. S. Yoo ◽  
B. G. Kim ◽  
S. W. Jin ◽  
T. Ishigaki ◽  
K. Kang
Keyword(s):  
Room Temperature ◽  
Interface Quality ◽  
Room Temperature Photoluminescence

Characterization of interface quality between various low-temperature oxides and Si using room-temperature-photoluminescence and Raman spectroscopy

2013 ◽  
Vol 28 (9) ◽  
pp. 1269-1277 ◽  
Author(s):  
Shiu-Ko Jang Jian ◽  
Chih-Cherng Jeng ◽  
Ting-Chun Wang ◽  
Chih-Mu Huang ◽  
Ying-Lang Wang ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Low Temperature ◽  
Room Temperature ◽  
Interface Quality ◽  
Room Temperature Photoluminescence ◽  
Image Position

Abstract

Degradation in a Methyl-phenyl Co-Polymeric Polysilane for LED Applications

2003 ◽  
Vol 769 ◽  
Author(s):  
Asha Sharma ◽  
Deepak ◽  
Monica Katiyar ◽  
Satyendra Kumar ◽  
V. Chandrasekhar ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Weight ◽  
Light Source ◽  
Room Temperature ◽  
Light Exposure ◽  
Room Temperature Photoluminescence ◽  
Pl Spectrum ◽  
Pl Intensity ◽  
Methyl Phenyl

AbstractThe optical degradation of polysilane copolymer has been studied in spin cast thin films and solutions using light source of 325 nm wavelength. The room temperature photoluminescence (PL) spectrum of these films show a sharp emission at 368 nm when excited with a source of 325 nm. However, the PL intensity deteriorates with time upon light exposure. Further the causes of this degradation have been examined by characterizing the material for its transmission behaviour and changes occurring in molecular weight as analysed by GPC data.

Anomalous Room-Temperature Photoluminescence from Nanostrained MoSe2 Monolayers

ACS Photonics ◽  
2021 ◽  
Author(s):  
Tomojit Chowdhury ◽  
Kiyoung Jo ◽  
Surendra B. Anantharaman ◽  
Todd H. Brintlinger ◽  
Deep Jariwala ◽  
...  
Keyword(s):  
Room Temperature ◽  
Room Temperature Photoluminescence

The Study on Microstructural and Optical Properties of Nanocrystalline Germanium Films

2010 ◽  
Vol 663-665 ◽  
pp. 324-327
Author(s):  
Chao Song ◽  
Rui Huang
Keyword(s):  
Multilayer Structure ◽  
Room Temperature ◽  
Multilayer Film ◽  
Volume Fraction ◽  
Raman Scattering Spectroscopy ◽  
Force Microscopy ◽  
Room Temperature Photoluminescence ◽  
Atomic Force ◽  
Lower Volume Fraction ◽  
Lower Volume

The germanium film and Ge/Si multilayer structure were fabricated by magnetron sputtering technique on silicon substrate at temperatures of 500°C. Raman scattering spectroscopy measurements reveal that the nanocrystalline Ge occurs in both kinds of samples. Furthermore, from the atomic force microscopy (AFM) results, it is found that the grain size as well as spatially ordering distribution of the nc-Ge can be modulated by the Ge/Si multilayer structure. The room temperature photoluminescence was also observed in the samples. However, compared with that from the nc-Ge film, the intensity of PL from the nc-Ge/a-Si multilayer film becomes weaker, which is attributed to its lower volume fraction of crystallized component.

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