Room Temperature Photoluminescence Characterization of Interface Quality of SiN/SiO2/Si Prepared under Various Deposition Techniques and Conditions

2015 ◽  
Vol 66 (4) ◽  
pp. 263-269 ◽  
Author(s):  
W. S. Yoo ◽  
B. G. Kim ◽  
S. W. Jin ◽  
T. Ishigaki ◽  
K. Kang
Keyword(s):  
Room Temperature ◽  
Interface Quality ◽  
Room Temperature Photoluminescence ◽  
Deposition Techniques

Characterization of interface quality between various low-temperature oxides and Si using room-temperature-photoluminescence and Raman spectroscopy

2013 ◽  
Vol 28 (9) ◽  
pp. 1269-1277 ◽  
Author(s):  
Shiu-Ko Jang Jian ◽  
Chih-Cherng Jeng ◽  
Ting-Chun Wang ◽  
Chih-Mu Huang ◽  
Ying-Lang Wang ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Low Temperature ◽  
Room Temperature ◽  
Interface Quality ◽  
Room Temperature Photoluminescence ◽  
Image Position

Abstract

Growth mechanism and characterization of ZnO nano-tubes synthesized using the hydrothermal-etching method

2009 ◽  
Vol 63 (6) ◽  
Author(s):  
Yan Li ◽  
Chuan-Sheng Liu ◽  
Yun-Ling Zou
Keyword(s):  
Room Temperature ◽  
Morphological Analysis ◽  
Diffraction Field ◽  
X Ray Diffraction ◽  
X Ray ◽  
Room Temperature Photoluminescence ◽  
Etching Method ◽  
Nano Rods ◽  
Two Stages

AbstractZnO nano-tubes (ZNTs) have been successfully synthesized via a simple hydrothermal-etching method, and characterized by X-ray diffraction, field emission scanning electron microscopy and room temperature photoluminescence measurement. The as-synthesized ZNTs have a diameter of 500 nm, wall thickness of 20–30 nm, and length of 5 µm. Intensity of the plane (0002) diffraction peak, compared with that of plane (10$$ \bar 1 $$0) of ZNTs, is obviously lower than that of ZnO nano-rods. This phenomenon can be caused by the smaller cross section of plane (0002) of the nano-tubes compared with that of other morphologies. On basis of the morphological analysis, the formation process of nano-tubes can be proposed in two stages: hydrothermal growth and reaction etching process.

Photoluminescence Characterization of SiGe/Si Quantum-Well Wire Structures

1995 ◽  
Vol 379 ◽  
Author(s):  
S. Nilsson ◽  
H. P. Zeindl ◽  
A. Wolff ◽  
K. Pressel
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Molecular Beam ◽  
Optical Quality ◽  
Photoluminescence Spectra ◽  
Single Quantum Well ◽  
Quantum Well Wire ◽  
Carbon Interstitial

ABSTRACTLow-temperature photoluminescence measurements were performed in order to probe the optical quality of SiGe/Si quantum-well wire structures fabricated by electron-beam lithography and subsequent reactive ion etching, having the patterned polymethylmethacrylate resist as an etch mask. In addition, one set of quantum-well wire structures was post-treated by means of annealing in a hydrogen environment. Our results show that even for the smallest wires of about 100nm in width, the wires exhibit phonon-resolved photoluminescence spectra, similar to that from the molecular beam eptitaxially grown SiGe single quantum well which was used as starting material for the patterning process. After the patterning process a new sharp peak appears in the photoluminescence spectra at 0.97eV in photon energy. Our investigation suggests that this feature is introduced by damage during the patterning process and most probably identical to the G-line, which previously was identified as originating from the dicarbon centre (substitutional carbon-interstitial carbon) in Si. This centre is known to be a very common endproduct of irradiating Si near room temperature which is the case at our patterning process.

Photoluminescence Characterization of Interface Quality of Bonded Silicon Wafers

2015 ◽  
Vol 5 (4) ◽  
pp. P3064-P3068 ◽  
Author(s):  
Woo Sik Yoo ◽  
Toshikazu Ishigaki ◽  
Kitaek Kang
Keyword(s):  
Silicon Wafers ◽  
Interface Quality
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