Characterization of interface quality between various low-temperature oxides and Si using room-temperature-photoluminescence and Raman spectroscopy

2013 ◽  
Vol 28 (9) ◽  
pp. 1269-1277 ◽  
Author(s):  
Shiu-Ko Jang Jian ◽  
Chih-Cherng Jeng ◽  
Ting-Chun Wang ◽  
Chih-Mu Huang ◽  
Ying-Lang Wang ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Low Temperature ◽  
Room Temperature ◽  
Interface Quality ◽  
Room Temperature Photoluminescence ◽  
Image Position

Abstract

Growth mechanism and characterization of ZnO nano-tubes synthesized using the hydrothermal-etching method

2009 ◽  
Vol 63 (6) ◽  
Author(s):  
Yan Li ◽  
Chuan-Sheng Liu ◽  
Yun-Ling Zou
Keyword(s):  
Room Temperature ◽  
Morphological Analysis ◽  
Diffraction Field ◽  
X Ray Diffraction ◽  
X Ray ◽  
Room Temperature Photoluminescence ◽  
Etching Method ◽  
Nano Rods ◽  
Two Stages

AbstractZnO nano-tubes (ZNTs) have been successfully synthesized via a simple hydrothermal-etching method, and characterized by X-ray diffraction, field emission scanning electron microscopy and room temperature photoluminescence measurement. The as-synthesized ZNTs have a diameter of 500 nm, wall thickness of 20–30 nm, and length of 5 µm. Intensity of the plane (0002) diffraction peak, compared with that of plane (10$$ \bar 1 $$0) of ZNTs, is obviously lower than that of ZnO nano-rods. This phenomenon can be caused by the smaller cross section of plane (0002) of the nano-tubes compared with that of other morphologies. On basis of the morphological analysis, the formation process of nano-tubes can be proposed in two stages: hydrothermal growth and reaction etching process.

Correlation between Room Temperature Photoluminescence and Resistivity in Semiinsulating Silicon Carbide

2006 ◽  
Vol 527-529 ◽  
pp. 717-720 ◽  
Author(s):  
Sashi Kumar Chanda ◽  
Yaroslav Koshka ◽  
Murugesu Yoganathan
Keyword(s):  
Low Temperature ◽  
Point Defects ◽  
Room Temperature ◽  
Vanadium Content ◽  
Mapping Technique ◽  
Native Defect ◽  
Room Temperature Photoluminescence ◽  
Native Point Defects ◽  
Pl Mapping ◽  
Resistivity Variation

A room temperature PL mapping technique was applied to establish the origin of resistivity variation in PVT-grown 6H SiC substrates. A direct correlation between the native defect-related PL and resistivity was found in undoped (V-free) samples. In vanadium-doped samples with low vanadium content, the resistivity showed a good correlation with the total PL signal consisting of contributions from both vanadium and native point defects. Well-known UD1 and UD3 levels were revealed by low-temperature PL spectroscopy. Some correlation was observed between these low-temperature PL signatures and the resistivity distribution.

Characterization of Fe-doped semi-insulating InP by low temperature and room temperature spatially resolved photoluminescence

1989 ◽  
Vol 96 (3) ◽  
pp. 469-482 ◽  
Author(s):  
M. Erman ◽  
G. Gillardin ◽  
J. Le Bris ◽  
M. Renaud ◽  
E. Tomzig
Keyword(s):  
Low Temperature ◽  
Room Temperature ◽  
Spatially Resolved
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