(Invited) Hybrid Wafer bonding and Heterogeneous Integration of GaN HEMTs and Si (100) MOSFETs

2013 ◽  
Vol 50 (9) ◽  
pp. 1055-1061 ◽  
Author(s):  
H.- S. Lee ◽  
Z. Li ◽  
M. Sun ◽  
K. Ryu ◽  
T. Palacios
Keyword(s):  
Wafer Bonding ◽  
Heterogeneous Integration ◽  
Gan Hemts

Bonding Position Accuracy of Direct Transfer Bonding, Chip-on-wafer Bonding for III-V/Si Heterogeneous Integration

2021 ◽  
Author(s):  
Hiromu Onodera ◽  
Takehiko Kikuchi ◽  
Yoshitaka Ohiso ◽  
Tomohiro Amemiya ◽  
Nobuhiko Nishiyama
Keyword(s):  
Wafer Bonding ◽  
Heterogeneous Integration ◽  
Direct Transfer ◽  
Position Accuracy

III-V/Ge Device Engineering for CMOS Photonics

2014 ◽  
Vol 783-786 ◽  
pp. 2028-2033
Author(s):  
Mitsuru Takenaka ◽  
Shinichi Takagi
Keyword(s):  
Wafer Bonding ◽  
High Performance ◽  
Field Effect Transistors ◽  
Compressive Strain ◽  
Oxide Semiconductor ◽  
Thin Body ◽  
Heterogeneous Integration ◽  
Optical Modulators ◽  
Device Engineering ◽  
Cmos Photonics

Heterogeneous integration of III-V compound semiconductors and Ge on the Si platform is one of the promising technologies for enhancing the performance of metal-oxide-semiconductor field effect transistors (MOSFETs) beyond the 10-nm technology node because of their high carrier mobilities. In addition, the III-Vs and Ge are also promising materials for photonic devices. Thus, we have investigated III-V/Ge device engineering for CMOS photonics, enabling monolithic integration of high-performance III-V/Ge CMOS transistors and III-V/Ge photonics on Si. The direct wafer bonding of III-V on Si has been investigated to form III-V on Insulator for III-V CMOS photonics. Extremely-thin-body InGaAs MOSFETs with the gate length of approximately 55 nm have successfully been demonstrated by using the wafer bonding. InP-based photonic-wire waveguide devices including micro bends, arrayed waveguide gratings, grating couplers, optical switches, and InGaAs photodetectors have also been demonstrated on the III-V-OI wafer. The gate stack formation on Ge is one of the critical issues for Ge MOSFETs. Recently, we have successfully demonstrated high-quality GeOx/Ge MOS interfaces formed by thermal oxidation and plasma oxidation. High-performance Ge pMOSFET and nMOSFET with thin EOT have been obtained using the GeOx/Ge MOS interfaces. We have also demonstrated that GeOx surface passivation is effective to reduce the dark current of Ge photodetectors in conjunction with gas-phase doped junction. We have also investigated strained SiGe optical modulators. We expect that compressive strain in SiGe enhances modulation efficiency, and an extremely small VπL of 0.033 V-cm is predicted. III-V/Ge heterogeneous integration is one of the promising ways for achieving ultrahigh performance electronic-photonic integrated circuits.

Wafer-Level Heterogeneous Integration of GaN HEMTs and Si (100) MOSFETs

2012 ◽  
Vol 33 (2) ◽  
pp. 200-202 ◽  
Author(s):  
Hyung-Seok Lee ◽  
Kevin Ryu ◽  
Min Sun ◽  
Tomas Palacios
Keyword(s):  
Heterogeneous Integration ◽  
Wafer Level ◽  
Gan Hemts

Flexible and Scalable Heterogeneous Integration of GaN HEMTs on Si-CMOS by Micro-Transfer-Printing

2017 ◽  
Vol 215 (8) ◽  
pp. 1700556 ◽  
Author(s):  
Ralf Lerner ◽  
Stefan Eisenbrandt ◽  
Frank Fischer ◽  
Alin Fecioru ◽  
António Jośe Trindade ◽  
...  
Keyword(s):  
Heterogeneous Integration ◽  
Transfer Printing ◽  
Gan Hemts
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