Flexible and Scalable Heterogeneous Integration of GaN HEMTs on Si-CMOS by Micro-Transfer-Printing

2017 ◽  
Vol 215 (8) ◽  
pp. 1700556 ◽  
Author(s):  
Ralf Lerner ◽  
Stefan Eisenbrandt ◽  
Frank Fischer ◽  
Alin Fecioru ◽  
António Jośe Trindade ◽  
...  
Keyword(s):  
Heterogeneous Integration ◽  
Transfer Printing ◽  
Gan Hemts

Micro-transfer Printing of GaN HEMTs for Heterogeneous Integration and Flexible RF Circuit Design

2020 ◽  
Author(s):  
Brian P. Downey ◽  
Andy Xie ◽  
Shawn Mack ◽  
D. Scott Katzer ◽  
James G. Champlain ◽  
...  
Keyword(s):  
Circuit Design ◽  
Heterogeneous Integration ◽  
Transfer Printing ◽  
Gan Hemts ◽  
Rf Circuit Design ◽  
Rf Circuit

scholarly journals High-performance Acetone Soluble Tape Transfer Printing Method for Heterogeneous Integration

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Jiaqi Zhang ◽  
Yichang Wu ◽  
Zhe Li ◽  
Yachao Zhang ◽  
Yue Peng ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
High Performance ◽  
Water Soluble ◽  
Experimental Results ◽  
Heterogeneous Integration ◽  
Transfer Printing ◽  
Adhesion Promoter ◽  
Thermal Release ◽  
Printing Method

Abstract A high-performance transfer printing method using a new soluble tape which can be dissolved in acetone is proposed to be used in heterogeneous integration. Si inks array was transferred from SOI wafers onto various substrates without adhesion promoter by this new method which we refer to as the acetone soluble tape (AST) method to compare with other transfer printing methods by using thermal release tape (TRT), water soluble tape (WST) and polydimethylsiloxane (PDMS). By using the AST method, the transfer printing process does not involve interface contention between stamp/inks and inks/receiver substrate so that it maximizes the transfer printing efficiency. Experimental results present the AST method has good performances, and various alien substrates, even curvilinear surfaces, can be selected as receiver substrates by the AST method. To examine the quality of the transferred Si inks, the Si TFTs were fabricated by using the Si membrane transferred by the AST method on sapphire substrate and the devices show the good performance. All the results confirm that the AST method is an effective method in heterogeneous integration.

Integration of GaN HEMTs onto Silicon CMOS by micro Transfer Printing

2016 ◽  
Author(s):  
Ralf Lerner ◽  
Stefan Eisenbrandt ◽  
Christopher Bower ◽  
Salvatore Bonafede ◽  
Alin Fecioru ◽  
...  
Keyword(s):  
Transfer Printing ◽  
Gan Hemts ◽  
Silicon Cmos

scholarly journals Heterogeneous Integration of Uni-Travelling-Carrier Photodiodes using Micro-Transfer-Printing on a Silicon-Nitride Platform

2021 ◽  
Author(s):  
Dennis Maes ◽  
Gunther Roelkens ◽  
Mohammed Zaknoune ◽  
Camiel Op de Beeck ◽  
Stijn Poelman ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Heterogeneous Integration ◽  
Transfer Printing

Nanoscale Transfer Printing for the Heterogeneous Integration of Semiconductor Nanowire Lasers

2019 ◽  
Author(s):  
Antonio Hurtado ◽  
Dimitars Jevtics ◽  
Benoit Guilhabert ◽  
Joshua Robertson ◽  
John McPhillimy ◽  
...  
Keyword(s):  
Heterogeneous Integration ◽  
Transfer Printing ◽  
Semiconductor Nanowire ◽  
Nanowire Lasers

scholarly journals Heterogeneous integration in silicon photonics through micro-transfer-printing

2019 ◽  
Author(s):  
Jing Zhang ◽  
Grigorij Muliuk ◽  
Jeroen Goyvaerts ◽  
Bahawal Haq ◽  
Sulakshna Kumari ◽  
...  
Keyword(s):  
Silicon Photonics ◽  
Heterogeneous Integration ◽  
Transfer Printing
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