New precursors for organometallic chemical vapor deposition of rhodium

1991 ◽  
Vol 69 (1) ◽  
pp. 108-110 ◽  
Author(s):  
R. Kumar ◽  
R. J. Puddephatt
Keyword(s):  
Chemical Vapor Deposition ◽  
Key Words ◽  
Chemical Vapour Deposition ◽  
Vapor Deposition ◽  
Silicon Substrate ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Organic Product ◽  
Carbon Impurities

The η-cyclopentadienyl (Cp) and η-allyl (C3H5) complexes [RhCp(CO)2], [RhCp(cod)] where cod = 1,5-cyclooctadiene, [Rh(η-C3H5)(CO)2], and [Rh(η-C3H5)3] have been shown to be useful precursors for the chemical vapour deposition (CVD) of rhodium films. The rhodium films contain carbon impurities but these can be greatly reduced if CVD is carried out in the presence of hydrogen. The films adhere well to a silicon substrate. The pyrolysis of [RhCp(CO)2] gives CO and [Rh2Cp2(CO)2(μ-CO)] and [Rh3Cp3(μ-CO)3] at intermediate stages. Pyrolysis of [Rh(η-C3H5)3] or [Rh(η-C3H5)(CO)2] gives 1,5-hexadiene as the only organic product, but similar pyrolysis in the presence of hydrogen gives much propene as well as 1,5-hexadiene. Key words: rhodium, deposition, allyl, cyclopentadienyl.

Routes to 3D conformal solid-state dielectric polymers: electrodeposition versus initiated chemical vapor deposition

2015 ◽  
Vol 2 (5) ◽  
pp. 502-508 ◽  
Author(s):  
Megan B. Sassin ◽  
Jeffrey W. Long ◽  
Jean Marie Wallace ◽  
Debra R. Rolison
Keyword(s):  
Chemical Vapor Deposition ◽  
Solid State ◽  
Chemical Vapour Deposition ◽  
Vapor Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Initiated Chemical Vapor Deposition ◽  
Carbon Coated ◽  
Conductive Substrates

We show that two distinct methods, electropolymerization and initiated chemical vapour deposition (iCVD), can be adapted to generate ultrathin polymers (30–50 nm thick) at three dimensionally (3D) porous conductive substrates comprising ∼300 μm-thick carbon-coated silica fiber paper (C@SiO2).

Chemical vapour deposition and characterization of uniform bilayer and trilayer MoS2crystals

2016 ◽  
Vol 4 (47) ◽  
pp. 11081-11087 ◽  
Author(s):  
Adam Zobel ◽  
Alex Boson ◽  
Peter M. Wilson ◽  
Dmitry S. Muratov ◽  
Denis V. Kuznetsov ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Chemical Vapour Deposition ◽  
Vapor Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Chemical Vapor

We report a chemical vapor deposition procedure for MoS2growth from MoO3and S, which yields predominantly bilayer and trilayer MoS2triangular islands.

Si1−xGexY Alloy Nanocluster Materials Chemical Vapor Deposition of Si2H6Ge2H6 Mixtures in Zeolite Y

1994 ◽  
Vol 358 ◽  
Author(s):  
Ömer Dag ◽  
Alex Kuperman ◽  
Geoffrey A. Ozin
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Chemical Vapour Deposition ◽  
Vapor Deposition ◽  
Electronic Structures ◽  
Vapour Deposition ◽  
Zeolite Y ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Compositional Range

ABSTRACTSi1−xGexY alloy nanocluster materials are synthesized by the chemical vapour deposition of Si2H6/Ge2H6 mixtures within the diamond lattice of 13Å supercages in acid zeolite Y. A multianalytical approach to the study of these Si1−xGexY nanomaterials over the full compositional range 0<x<1 provides information concerning the mode of formation, geometric and electronic structures, trends in the optical properties of the encapsulated alloy nanoclusters.

Structure and photoluminescence of boron-doped carbon nanoflakes grown by hot filament chemical vapour deposition

2015 ◽  
Vol 3 (5) ◽  
pp. 1106-1112 ◽  
Author(s):  
Biben Wang ◽  
Kostya (Ken) Ostrikov ◽  
Timothy van der Laan ◽  
Ruiwen Shao ◽  
Lin Li
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Carbide ◽  
Vapor Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Boron Doped ◽  
Carbon Nanoflakes ◽  
Boron Source ◽  
Hot Filament

Boron-doped carbon nanoflakes were directly synthesized by hot filament chemical vapor deposition, nontoxic boron carbide was used as the boron source.

scholarly journals Active Phase of Cobalt Oxide (Co3O4) as a Promising Catalyst for Graphene Growth by Alcohol Catalytic Chemical Vapor Deposition

2020 ◽  
Vol 8 (6) ◽  
pp. 2061-2065
Keyword(s):  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Vapour Deposition ◽  
Annealing Temperature ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Graphene Growth ◽  
Grown Graphene

The presence of active catalyst during graphene growth by alcohol catalytic chemical vapour deposition is a compulsory. This study is aimed to validate the effect of annealing temperature for the formation of active cobalt oxide (Co3O4 ) film on the graphene growth by alcohol catalytic chemical vapour deposition technique. Active Co3O4 film was prepared on silicon wafers by sol-gel process, using cobalt acetate tetrahydrate as the precursor compound and absolute ethanol as the solvent. The active Co3O4 phase was achieved by annealing process at 450, 500, 550 and 600 °C. The graphene is grown from active Co3O4 film under 900 °C of chemical vapor deposition (CVD) processing temperature for 5 minutes. The obtained Co3O4 was characterized by x-ray diffraction and Raman spectroscopy. The as-grown graphene from active Co3O4 film annealed at 450 ⁰C was characterized by Raman spectroscopy and field emission scanning electron microscope (FESEM). The results demonstrate that spinel type cubic structure of Co3O4 could be produced at the varied annealing temperatures but the optimum XRD result was at 500 ⁰C annealing temperature. The presence of active Co3O4 phase was supported with the exhibited peaks of four Raman-active phonon modes in the Raman spectra. The quality of as-grown graphene determined from the ratio of 2D-band over G-band intensities is 1.010; an indication of few layers of graphene. Active Co3O4 film is able to produce good quality of graphene comparable with Ni and Cu catalysts. And graphene can be used in many devices, including electronic device, energy storage device, power device, and others.

Reduction of carbon impurities in aluminium nitride from time-resolved chemical vapour deposition using trimethylaluminum

2020 ◽  
Author(s):  
Polla Rouf ◽  
Pitsiri Sukkaew ◽  
Lars Ojamäe ◽  
Henrik Pedersen
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Aluminium Nitride ◽  
Methyl Groups ◽  
Time Resolved ◽  
Thermally Induced ◽  
Light Emitting ◽  
Carbon Impurities ◽  
Wide Range

<p>Aluminium nitride (AlN) is a semiconductor with a wide range of applications from light emitting diodes to high frequency transistors. Electronic grade AlN is routinely deposited at 1000 °C by chemical vapour deposition (CVD) using trimethylaluminium (TMA) and NH<sub>3</sub> while low temperature CVD routes to high quality AlN are scarce and suffer from high levels of carbon impurities in the film. We report on an ALD-like CVD approach with time-resolved precursor supply where thermally induced desorption of methyl groups from the AlN surface is enhanced by the addition of an extra pulse, H<sub>2</sub>, N<sub>2</sub> or Ar between the TMA and NH<sub>3</sub> pulses. The enhanced desorption allowed deposition of AlN films with carbon content of 1 at. % at 480 °C. Kinetic- and quantum chemical modelling suggest that the extra pulse between TMA and NH<sub>3</sub> prevents re-adsorption of desorbing methyl groups terminating the AlN surface after the TMA pulse. </p>

Group III Metal Sulfide Thin Films From Single-Source Precursors by Chemical Vapor Deposition (CVD) Techniques

1999 ◽  
Vol 606 ◽  
Author(s):  
Mike R. Lazell ◽  
Paul O'brien ◽  
David J. Otway ◽  
Jin-Ho Park
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Metal Sulfide ◽  
Chemical Vapor ◽  
Single Source ◽  
Group 13 ◽  
Single Source Precursors ◽  
Group Iii

AbstractSeveral single-source precursors including In(SOCNiBu2)3, In(S2CNMeHex)3 and Ga(S2CNMeR)3, (R = Et, Bu, Hex) have been prepared and used for the deposition of Group 13 metal sulfide thin films. The α and β-In2S3thin films on borosilicate glass and oc-Ga 2S3thin films on GaAs(111) single crystal substrates were prepared from the precursors by various chemical vapour deposition (CVD) techniques. These semicondcuting materials have been characterized by XRD, SEM, XPS and EDAX.

Growth of amorphous SiO2 nano-wires on pre-oxidized silicon substrate via chemical vapor deposition

2008 ◽  
Vol 354 (15-16) ◽  
pp. 1731-1735 ◽  
Author(s):  
Zhimei Yang ◽  
Zhou Yu ◽  
Hao Chen ◽  
Zhifeng Jiao ◽  
Yong Jin ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Substrate ◽  
Chemical Vapor ◽  
Amorphous Sio2 ◽  
Nano Wires
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