Chemical vapour deposition and characterization of uniform bilayer and trilayer MoS2crystals

2016 ◽  
Vol 4 (47) ◽  
pp. 11081-11087 ◽  
Author(s):  
Adam Zobel ◽  
Alex Boson ◽  
Peter M. Wilson ◽  
Dmitry S. Muratov ◽  
Denis V. Kuznetsov ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Chemical Vapour Deposition ◽  
Vapor Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Chemical Vapor

We report a chemical vapor deposition procedure for MoS2growth from MoO3and S, which yields predominantly bilayer and trilayer MoS2triangular islands.

Routes to 3D conformal solid-state dielectric polymers: electrodeposition versus initiated chemical vapor deposition

2015 ◽  
Vol 2 (5) ◽  
pp. 502-508 ◽  
Author(s):  
Megan B. Sassin ◽  
Jeffrey W. Long ◽  
Jean Marie Wallace ◽  
Debra R. Rolison
Keyword(s):  
Chemical Vapor Deposition ◽  
Solid State ◽  
Chemical Vapour Deposition ◽  
Vapor Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Initiated Chemical Vapor Deposition ◽  
Carbon Coated ◽  
Conductive Substrates

We show that two distinct methods, electropolymerization and initiated chemical vapour deposition (iCVD), can be adapted to generate ultrathin polymers (30–50 nm thick) at three dimensionally (3D) porous conductive substrates comprising ∼300 μm-thick carbon-coated silica fiber paper (C@SiO2).

New precursors for organometallic chemical vapor deposition of rhodium

1991 ◽  
Vol 69 (1) ◽  
pp. 108-110 ◽  
Author(s):  
R. Kumar ◽  
R. J. Puddephatt
Keyword(s):  
Chemical Vapor Deposition ◽  
Key Words ◽  
Chemical Vapour Deposition ◽  
Vapor Deposition ◽  
Silicon Substrate ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Organic Product ◽  
Carbon Impurities

The η-cyclopentadienyl (Cp) and η-allyl (C3H5) complexes [RhCp(CO)2], [RhCp(cod)] where cod = 1,5-cyclooctadiene, [Rh(η-C3H5)(CO)2], and [Rh(η-C3H5)3] have been shown to be useful precursors for the chemical vapour deposition (CVD) of rhodium films. The rhodium films contain carbon impurities but these can be greatly reduced if CVD is carried out in the presence of hydrogen. The films adhere well to a silicon substrate. The pyrolysis of [RhCp(CO)2] gives CO and [Rh2Cp2(CO)2(μ-CO)] and [Rh3Cp3(μ-CO)3] at intermediate stages. Pyrolysis of [Rh(η-C3H5)3] or [Rh(η-C3H5)(CO)2] gives 1,5-hexadiene as the only organic product, but similar pyrolysis in the presence of hydrogen gives much propene as well as 1,5-hexadiene. Key words: rhodium, deposition, allyl, cyclopentadienyl.

Si1−xGexY Alloy Nanocluster Materials Chemical Vapor Deposition of Si2H6Ge2H6 Mixtures in Zeolite Y

1994 ◽  
Vol 358 ◽  
Author(s):  
Ömer Dag ◽  
Alex Kuperman ◽  
Geoffrey A. Ozin
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Chemical Vapour Deposition ◽  
Vapor Deposition ◽  
Electronic Structures ◽  
Vapour Deposition ◽  
Zeolite Y ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Compositional Range

ABSTRACTSi1−xGexY alloy nanocluster materials are synthesized by the chemical vapour deposition of Si2H6/Ge2H6 mixtures within the diamond lattice of 13Å supercages in acid zeolite Y. A multianalytical approach to the study of these Si1−xGexY nanomaterials over the full compositional range 0<x<1 provides information concerning the mode of formation, geometric and electronic structures, trends in the optical properties of the encapsulated alloy nanoclusters.

Structure and photoluminescence of boron-doped carbon nanoflakes grown by hot filament chemical vapour deposition

2015 ◽  
Vol 3 (5) ◽  
pp. 1106-1112 ◽  
Author(s):  
Biben Wang ◽  
Kostya (Ken) Ostrikov ◽  
Timothy van der Laan ◽  
Ruiwen Shao ◽  
Lin Li
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Carbide ◽  
Vapor Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Boron Doped ◽  
Carbon Nanoflakes ◽  
Boron Source ◽  
Hot Filament

Boron-doped carbon nanoflakes were directly synthesized by hot filament chemical vapor deposition, nontoxic boron carbide was used as the boron source.

scholarly journals Active Phase of Cobalt Oxide (Co3O4) as a Promising Catalyst for Graphene Growth by Alcohol Catalytic Chemical Vapor Deposition

2020 ◽  
Vol 8 (6) ◽  
pp. 2061-2065
Keyword(s):  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Vapour Deposition ◽  
Annealing Temperature ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Graphene Growth ◽  
Grown Graphene

The presence of active catalyst during graphene growth by alcohol catalytic chemical vapour deposition is a compulsory. This study is aimed to validate the effect of annealing temperature for the formation of active cobalt oxide (Co3O4 ) film on the graphene growth by alcohol catalytic chemical vapour deposition technique. Active Co3O4 film was prepared on silicon wafers by sol-gel process, using cobalt acetate tetrahydrate as the precursor compound and absolute ethanol as the solvent. The active Co3O4 phase was achieved by annealing process at 450, 500, 550 and 600 °C. The graphene is grown from active Co3O4 film under 900 °C of chemical vapor deposition (CVD) processing temperature for 5 minutes. The obtained Co3O4 was characterized by x-ray diffraction and Raman spectroscopy. The as-grown graphene from active Co3O4 film annealed at 450 ⁰C was characterized by Raman spectroscopy and field emission scanning electron microscope (FESEM). The results demonstrate that spinel type cubic structure of Co3O4 could be produced at the varied annealing temperatures but the optimum XRD result was at 500 ⁰C annealing temperature. The presence of active Co3O4 phase was supported with the exhibited peaks of four Raman-active phonon modes in the Raman spectra. The quality of as-grown graphene determined from the ratio of 2D-band over G-band intensities is 1.010; an indication of few layers of graphene. Active Co3O4 film is able to produce good quality of graphene comparable with Ni and Cu catalysts. And graphene can be used in many devices, including electronic device, energy storage device, power device, and others.

Chemical vapor deposition growth and characterization of AlGaN nanowires

2015 ◽  
Vol 32 (6) ◽  
pp. 638
Author(s):  
Xingmin Cai ◽  
Xiaoqiang Su ◽  
Fan Ye ◽  
Huan Wang ◽  
Guangxing Liang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth

Epitaxial mist chemical vapor deposition growth and characterization of Cu3N films on (0001)α-Al2O3 substrates

2020 ◽  
Vol 13 (7) ◽  
pp. 075505
Author(s):  
Tomohiro Yamaguchi ◽  
Hiroki Nagai ◽  
Takanori Kiguchi ◽  
Nao Wakabayashi ◽  
Takuto Igawa ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Α Al2o3

Characterization of ZnO Films Grown by Chemical Vapor Deposition as Active Layer in Pseudo-MOSFET

2021 ◽  
Author(s):  
A. Ramos-Carrazco ◽  
J. A. Gallardo-Cubedo ◽  
A. Vera-Marquina ◽  
A. L. Leal-Cruz ◽  
J. R. Noriega ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Active Layer ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Zno Films
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