Si1−xGexY Alloy Nanocluster Materials Chemical Vapor Deposition of Si2H6Ge2H6 Mixtures in Zeolite Y

1994 ◽  
Vol 358 ◽  
Author(s):  
Ömer Dag ◽  
Alex Kuperman ◽  
Geoffrey A. Ozin
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Chemical Vapour Deposition ◽  
Vapor Deposition ◽  
Electronic Structures ◽  
Vapour Deposition ◽  
Zeolite Y ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Compositional Range

ABSTRACTSi1−xGexY alloy nanocluster materials are synthesized by the chemical vapour deposition of Si2H6/Ge2H6 mixtures within the diamond lattice of 13Å supercages in acid zeolite Y. A multianalytical approach to the study of these Si1−xGexY nanomaterials over the full compositional range 0<x<1 provides information concerning the mode of formation, geometric and electronic structures, trends in the optical properties of the encapsulated alloy nanoclusters.

Routes to 3D conformal solid-state dielectric polymers: electrodeposition versus initiated chemical vapor deposition

2015 ◽  
Vol 2 (5) ◽  
pp. 502-508 ◽  
Author(s):  
Megan B. Sassin ◽  
Jeffrey W. Long ◽  
Jean Marie Wallace ◽  
Debra R. Rolison
Keyword(s):  
Chemical Vapor Deposition ◽  
Solid State ◽  
Chemical Vapour Deposition ◽  
Vapor Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Initiated Chemical Vapor Deposition ◽  
Carbon Coated ◽  
Conductive Substrates

We show that two distinct methods, electropolymerization and initiated chemical vapour deposition (iCVD), can be adapted to generate ultrathin polymers (30–50 nm thick) at three dimensionally (3D) porous conductive substrates comprising ∼300 μm-thick carbon-coated silica fiber paper (C@SiO2).

Chemical vapour deposition and characterization of uniform bilayer and trilayer MoS2crystals

2016 ◽  
Vol 4 (47) ◽  
pp. 11081-11087 ◽  
Author(s):  
Adam Zobel ◽  
Alex Boson ◽  
Peter M. Wilson ◽  
Dmitry S. Muratov ◽  
Denis V. Kuznetsov ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Chemical Vapour Deposition ◽  
Vapor Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Chemical Vapor

We report a chemical vapor deposition procedure for MoS2growth from MoO3and S, which yields predominantly bilayer and trilayer MoS2triangular islands.

New precursors for organometallic chemical vapor deposition of rhodium

1991 ◽  
Vol 69 (1) ◽  
pp. 108-110 ◽  
Author(s):  
R. Kumar ◽  
R. J. Puddephatt
Keyword(s):  
Chemical Vapor Deposition ◽  
Key Words ◽  
Chemical Vapour Deposition ◽  
Vapor Deposition ◽  
Silicon Substrate ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Organic Product ◽  
Carbon Impurities

The η-cyclopentadienyl (Cp) and η-allyl (C3H5) complexes [RhCp(CO)2], [RhCp(cod)] where cod = 1,5-cyclooctadiene, [Rh(η-C3H5)(CO)2], and [Rh(η-C3H5)3] have been shown to be useful precursors for the chemical vapour deposition (CVD) of rhodium films. The rhodium films contain carbon impurities but these can be greatly reduced if CVD is carried out in the presence of hydrogen. The films adhere well to a silicon substrate. The pyrolysis of [RhCp(CO)2] gives CO and [Rh2Cp2(CO)2(μ-CO)] and [Rh3Cp3(μ-CO)3] at intermediate stages. Pyrolysis of [Rh(η-C3H5)3] or [Rh(η-C3H5)(CO)2] gives 1,5-hexadiene as the only organic product, but similar pyrolysis in the presence of hydrogen gives much propene as well as 1,5-hexadiene. Key words: rhodium, deposition, allyl, cyclopentadienyl.

Structure and photoluminescence of boron-doped carbon nanoflakes grown by hot filament chemical vapour deposition

2015 ◽  
Vol 3 (5) ◽  
pp. 1106-1112 ◽  
Author(s):  
Biben Wang ◽  
Kostya (Ken) Ostrikov ◽  
Timothy van der Laan ◽  
Ruiwen Shao ◽  
Lin Li
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Carbide ◽  
Vapor Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Boron Doped ◽  
Carbon Nanoflakes ◽  
Boron Source ◽  
Hot Filament

Boron-doped carbon nanoflakes were directly synthesized by hot filament chemical vapor deposition, nontoxic boron carbide was used as the boron source.

scholarly journals Active Phase of Cobalt Oxide (Co3O4) as a Promising Catalyst for Graphene Growth by Alcohol Catalytic Chemical Vapor Deposition

2020 ◽  
Vol 8 (6) ◽  
pp. 2061-2065
Keyword(s):  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Vapour Deposition ◽  
Annealing Temperature ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Graphene Growth ◽  
Grown Graphene

The presence of active catalyst during graphene growth by alcohol catalytic chemical vapour deposition is a compulsory. This study is aimed to validate the effect of annealing temperature for the formation of active cobalt oxide (Co3O4 ) film on the graphene growth by alcohol catalytic chemical vapour deposition technique. Active Co3O4 film was prepared on silicon wafers by sol-gel process, using cobalt acetate tetrahydrate as the precursor compound and absolute ethanol as the solvent. The active Co3O4 phase was achieved by annealing process at 450, 500, 550 and 600 °C. The graphene is grown from active Co3O4 film under 900 °C of chemical vapor deposition (CVD) processing temperature for 5 minutes. The obtained Co3O4 was characterized by x-ray diffraction and Raman spectroscopy. The as-grown graphene from active Co3O4 film annealed at 450 ⁰C was characterized by Raman spectroscopy and field emission scanning electron microscope (FESEM). The results demonstrate that spinel type cubic structure of Co3O4 could be produced at the varied annealing temperatures but the optimum XRD result was at 500 ⁰C annealing temperature. The presence of active Co3O4 phase was supported with the exhibited peaks of four Raman-active phonon modes in the Raman spectra. The quality of as-grown graphene determined from the ratio of 2D-band over G-band intensities is 1.010; an indication of few layers of graphene. Active Co3O4 film is able to produce good quality of graphene comparable with Ni and Cu catalysts. And graphene can be used in many devices, including electronic device, energy storage device, power device, and others.

Optical Properties of Novel GaN 3D Structures Grown by Metal-Organic Chemical Vapor Deposition (MOCVD)

2004 ◽  
Vol 43 (No. 6A) ◽  
pp. L698-L701 ◽  
Author(s):  
Marco Sacilotti ◽  
Luc Imhoff ◽  
Colette Dumas ◽  
Pierre Viste ◽  
Jean-Claude Vial ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
3D Structures ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

scholarly journals Control of the Polarity and Surface Morphology of GaN Films Deposited on C-Plane Sapphire

1999 ◽  
Vol 4 (S1) ◽  
pp. 634-641 ◽  
Author(s):  
M. Sumiya ◽  
T. Ohnishi ◽  
M. Tanaka ◽  
A. Ohtomo ◽  
M. Kawasaki ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Ion Scattering ◽  
Ion Scattering Spectroscopy ◽  
Metalorganic Chemical

Control of the polarity of GaN films deposited by metalorganic chemical vapor deposition was achieved by substrate nitridation and subsequent annealing of a buffer layer. The surface morphology and optical properties of 1.2μm GaN films were influenced by the different growth mode due to the polar direction. Coaxial impact collision ion scattering spectroscopy revealed that the polarity composition of a buffer layer on nitrided sapphire varied by annealing in a H2 atmosphere. It was considered that the systematic variation of the surface morphology was caused by the polarity composition of the buffer layer.

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