Comparative studies of the influence of hydrogen incorporation on the electronic properties of a-Ge:H films prepared by two different techniques

2000 ◽  
Vol 77 (9) ◽  
pp. 659-666
Author(s):  
Y Bouizem ◽  
J D Sib ◽  
L Chahed ◽  
M L Thèye
Keyword(s):  
Optical Absorption ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Localized States ◽  
Optical Absorption Spectra ◽  
Defect States ◽  
Hydrogen Incorporation ◽  
Gap States ◽  
Hydrogenated Amorphous ◽  
Hydrogenated Amorphous Germanium

We present the results of a detailed investigation of hydrogen incorporation and optical absorption in the 0.6-1.3 eV range for two series of hydrogenated amorphous germanium films (a-Ge:H) deposited by reactive sputtering (series A) and by plasma-enhanced chemical vapor deposition from germane (series B). Our results clearly show that the series A samples are characterized by a larger bonded hydrogen concentration (CH), a more rapid gap variation with increasing CH, a smaller refractive index, and a lower density than the series B samples. We also compare in detail the energy distribution of the localized states in the pseudo-gap and the deep-defect states density as deduced from a decomposition of the optical absorption spectra based on a theoretical model for the gap states density in amorphous tetracoordinated semiconductors.PACS No.: 71.90

Raman and Ft‐Ir Study on Structure and Its Stability of Hydrogenated Amorphous Germanium‐Nitrogen Alloys

1996 ◽  
Vol 446 ◽  
Author(s):  
Jun Xu ◽  
Kunji Chen ◽  
Duan Feng ◽  
Seiichi Miyazaki ◽  
Masataka Hirose
Keyword(s):  
Thermal Stability ◽  
Fourier Transform ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Amorphous Germanium ◽  
Ft Ir ◽  
Ir Study ◽  
Hydrogenated Amorphous ◽  
Hydrogenated Amorphous Germanium ◽  
Infrared Techniques

AbstractA series of hydrogenated amorphous germanium‐nitrogen (a‐GeN:H) alloys have been synthesized by plasma enhanced chemical vapor deposition. The structure and its thermal stability have been investigated by means of Raman Scattering and Fourier Transform Infrared techniques. It was found that the structure is changed from Ge‐Ge‐like to Ge‐N‐like when the nitrogen content x in a‐Ge1‐xNx:H is larger than 0.3. Some a‐GeN:H alloys were annealed for 30min at different temperature and it is shown that the film structural stability is significantly improved compared with pure a‐Ge:H film.

NITROGEN INCORPORATED HYDROGENATED AMORPHOUS CARBON THIN FILMS DEPOSITED BY MICROWAVE SURFACE-WAVE PLASMA CHEMICAL VAPOR DEPOSITION

2009 ◽  
Vol 23 (09) ◽  
pp. 2159-2165 ◽  
Author(s):  
SUDIP ADHIKARI ◽  
MASAYOSHI UMENO
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Wave ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Hydrogenated Amorphous Carbon ◽  
Plasma Chemical Vapor Deposition ◽  
Hydrogenated Amorphous

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.

Hydrogen incorporation in CNx films deposited by ECR chemical vapor deposition

2003 ◽  
Vol 12 (3-7) ◽  
pp. 632-635 ◽  
Author(s):  
M. Camero ◽  
R. Gago ◽  
C. Gómez-Aleixandre ◽  
J.M. Albella
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hydrogen Incorporation ◽  
Cnx Films

Light-Induced Effects on Fluorinated Amorphous and Microcrystalline Silicon Films

1996 ◽  
Vol 420 ◽  
Author(s):  
Hong-Seok Choi ◽  
Keun-Ho Jang ◽  
Jhun-Suk Yoo ◽  
Min-Koo Han
Keyword(s):  
Band Gap ◽  
Vapor Deposition ◽  
Optical Band Gap ◽  
Silicon Film ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
Microcrystalline Silicon ◽  
Amorphous Silicon Film ◽  
Hydrogenated Amorphous

AbstractThe fluorinated amorphous and microcrystalline silicon (a,μc-Si:H;F) films have been prepared by rf plasma enhanced chemical vapor deposition (PECVD) with SiH 4 and SiF 4 gas mixtures. The stretching Si-O (1085 cm-1) and SiH2 (2100 cm-1) bands estimated from infrared (IR) spectroscope data have related to the evolution of crystallinity and the optical band gap was shifted by introducing Si-O bonds. The sub-band gap absorption coefficient in a,μc-Si:H;F films was about one order lower than that in hydrogenated amorphous silicon film (a-Si:H). The subband gap absorption in a-Si:H;F film was comparable to that in tic-Si:H;F films. The lightinduced degradation of a,μc-Si:H;F films were also suppressed.

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