Ion-beam-assisted deposition of nonhydrogenated a-Si:C films

1996 ◽  
Vol 74 (3-4) ◽  
pp. 97-101
Author(s):  
C. D. Tucker ◽  
D. E. Brodie
Keyword(s):  
Electron Cyclotron Resonance ◽  
Defect Density ◽  
Ion Beam ◽  
High Vacuum ◽  
Argon Plasma ◽  
Localized States ◽  
Structural Defects ◽  
Electrical Characteristics ◽  
Ion Beam Assisted Deposition ◽  
Ultra High Purity

Amorphous silicon carbide (a-Si:C) films were prepared by low-energy ion-beam-assisted deposition (IBAD) in an attempt to remove structural defects in the "lattice" and improve the electrical characteristics of the film. The ion beam was generated by electron cyclotron resonance from an ultra-high-purity argon plasma. The deposition environment was first evacuated to a very high vacuum to eliminate all but trace amounts of water vapour and other gases so that improvements in the electrical and (or) structural properties of the film would be attributable to the influence of the densification by ion bombardment and not to contaminants. The IBAD process does improve the film characteristics by reducing the density of localized states at the Fermi level and the porosity of the film. However, even though these films have the best electrical characteristics obtained thus far for these kind of films, none of them exhibited device quality and none were observed to be photoconducting. A large density (≈1 at.%) of implanted argon atoms may be limiting the reduction in the defect density that might otherwise be achievable.

Trapping of Hydrogen in Carbon Nitride Films During or After High Temperature Heat Treatment

2004 ◽  
Vol 854 ◽  
Author(s):  
David C. Ingram ◽  
Asghar Kayani ◽  
William C. Lanter ◽  
Charles A. DeJoseph
Keyword(s):  
Heat Treatment ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Deuterated Water ◽  
Elastic Recoil ◽  
High Temperature Heat Treatment ◽  
Ion Beam Assisted Deposition ◽  
Ultra High Purity ◽  
Magnetron Sputter Deposition ◽  
Deuterium Gas

ABSTRACTThin films of carbon nitride deposited by ion beam assisted deposition or by magnetron sputter deposition typically contain a significant fraction of hydrogen, 1–30 atomic percent (at.%). In order to improve the thermal stability of the properties of the films, attempts have been made to minimize the hydrogen trapped during deposition. Such films typically have less than 5 at.% hydrogen. On heating these films in ultra high purity (99.999%) argon, it has been found that above 600°C they start to absorb significant amounts of hydrogen, this despite retaining their mechanical integrity. The composition of the films is determined using Rutherford Backscattering Spectroscopy in combination with Elastic Recoil Spectroscopy for detecting the hydrogen isotopes. In this paper, the possible sources of the hydrogen have been investigated by exposing the samples to deuterated water or deuterium gas during or immediately after the heat treatment.

Ion Beam Modification of Cluster-Covered Silicon Surfaces

1996 ◽  
Vol 439 ◽  
Author(s):  
O. V. Gulko ◽  
M. T. Zinke-Allmang
Keyword(s):  
Crystalline Silicon ◽  
Defect Density ◽  
Ion Beam ◽  
High Vacuum ◽  
Finite Size ◽  
Areal Density ◽  
Ultra High Vacuum ◽  
Heteroepitaxial Growth ◽  
Ion Beam Modification ◽  
Density Reduction

AbstractClusters of independently tailored areal density and size distribution were grown on semiconductor surfaces in ultra-high vacuum and used as masks for selective ion beam modification. First studies were undertaken to characterize the vertical interface between areas exposed to low energy ion beams and areas covered by clusters (crystalline silicon). Selective etching was employed to create a patterned surface as a substrate for heteroepitaxial growth of thick Ge layers to test defect density reduction due to finite size growth areas. The quality of the overlayers is discussed.

Localized states of a-GaP:N by nitrogen ion beam assisted deposition

1996 ◽  
Vol 198-200 ◽  
pp. 383-386
Author(s):  
Hiroshi Kubota ◽  
Tomohiro Tashiro ◽  
Takanori Fujiyoshi ◽  
Tsuyoshi Hirayu ◽  
Masami Onuki
Keyword(s):  
Ion Beam ◽  
Localized States ◽  
Ion Beam Assisted Deposition ◽  
Nitrogen Ion

Ion Beam Assisted Texture Evolution during Thin Film Deposition of Metal Nitrides

2000 ◽  
Vol 647 ◽  
Author(s):  
Bernd Stritzker ◽  
Jürgen W. Gerlach ◽  
Stephan Six ◽  
Bernd Rauschenbach
Keyword(s):  
Thin Films ◽  
Defect Density ◽  
Texture Evolution ◽  
Ion Beam ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Crystalline Quality ◽  
Ion Energy ◽  
Ion Beam Assisted Deposition ◽  
Nitrogen Ion

AbstractIon beam assisted deposition, i.e., the bombardment of thin films with a beam of energetic particles has become a highly developed tool for the preparation of thin films. This technique provides thin films and coatings with modified microstructure and properties. In this paper examples are presented for the modifying of the structure: in-situ modification of texture during ion beam assisted film growth and ion beam enhanced epitaxy.The biaxial alignment of titanium nitride films prepared on Si(111) by nitrogen ion beam assisted deposition at room temperature was studied. The bombardment perpendicular to the surface of the substrate causes an {001} alignment of crystallites. A 55° ion beam incidence angle produces both a {111} orientation relative to the surface and a {100} orientation relative to the ion beam. This results in a totally fixed orientation of the crystallites. The texture evolution is explained by the existence of open channeling directions.Epitaxial, hexagonal gallium nitride films were grown on c-plane sapphire by low-energy nitrogen ion beam assisted deposition (≤ 25 eV). The ion energy was chosen to be less than the corrected bulk displacement energy to avoid the formation of ion-induced point defects in the bulk. The results show that GaN films with a nearly perfect {0002} texture are formed which have superior crystalline quality than films grown without ion irradiation. The mosaicity and the defect density are reduced.By applying an assisting ion beam during pulsed laser deposition of aluminum nitride on the c-plane of sapphire, epitaxial, hexagonal films could be produced. The results prove the beneficial influence of the ion beam on the crystalline quality of the films. An optimum ion energy of 500 eV was found where the medium tilt as well as the medium twist of the crystallites was minimal.

Ion Beam Modification of Cluster-Covered Silicon Surfaces

1996 ◽  
Vol 438 ◽  
Author(s):  
O. V. Gulko ◽  
M. T. Zinke-Allmang
Keyword(s):  
Crystalline Silicon ◽  
Defect Density ◽  
Ion Beam ◽  
High Vacuum ◽  
Finite Size ◽  
Areal Density ◽  
Ultra High Vacuum ◽  
Heteroepitaxial Growth ◽  
Ion Beam Modification ◽  
Density Reduction

AbstractClusters of independently tailored areal density and size distribution were grown on semiconductor surfaces in ultra-high vacuum and used as masks for selective ion beam modification. First studies were undertaken to characterize the vertical interface between areas exposed to low energy ion beams and areas covered by clusters (crystalline silicon). Selective etching was employed to create a patterned surface as a substrate for heteroepitaxial growth of thick Ge layers to test defect density reduction due to finite size growth areas. The quality of the overlayers is discussed.

An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

1988 ◽  
Vol 46 ◽  
pp. 884-885
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Metal Base ◽  
In Situ Experiments ◽  
Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

Plasmonic properties of titanium nitride thin films prepared by ion beam assisted deposition

2016 ◽  
Vol 185 ◽  
pp. 295-298 ◽  
Author(s):  
Lin-Ao Zhang ◽  
Hao-Nan Liu ◽  
Xiao-Xia Suo ◽  
Shuo Tong ◽  
Ying-Lan Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
Ion Beam ◽  
Ion Beam Assisted Deposition

Carbon Nitride Film Formation by Low Energy Positive and Negative Ion Beam Deposition

1996 ◽  
Vol 438 ◽  
Author(s):  
N. Tsubouchi ◽  
Y. Horino ◽  
B. Enders ◽  
A. Chayahara ◽  
A. Kinomura ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
High Vacuum ◽  
Negative Ions ◽  
Low Energy ◽  
Ultra High Vacuum ◽  
Negative Ion ◽  
Nitride Film ◽  
Ion Energy

AbstractUsing a newly developed ion beam apparatus, PANDA (Positive And Negative ions Deposition Apparatus), carbon nitride films were prepared by simultaneous deposition of mass-analyzed low energy positive and negative ions such as C2-, N+, under ultra high vacuum conditions, in the order of 10−6 Pa on silicon wafer. The ion energy was varied from 50 to 400 eV. The film properties as a function of their beam energy were evaluated by Rutherford Backscattering Spectrometry (RBS), Fourier Transform Infrared spectroscopy (FTIR) and Raman scattering. From the results, it is suggested that the C-N triple bond contents in films depends on nitrogen ion energy.

Fundamental Aspects of Ion Beam Assisted Deposition of Magnesium Oxide Template Films

2009 ◽  
Vol 19 (3) ◽  
pp. 3311-3314 ◽  
Author(s):  
J.R. Groves ◽  
R.F. DePaula ◽  
L. Stan ◽  
R.H. Hammond ◽  
B.M. Clemens
Keyword(s):  
Magnesium Oxide ◽  
Ion Beam ◽  
Ion Beam Assisted Deposition

Optical and electrical properties of p-type zinc oxide thin films synthesized by ion beam assisted deposition

2005 ◽  
Vol 492 (1-2) ◽  
pp. 203-206 ◽  
Author(s):  
Zhi Yan ◽  
Zhi Tang Song ◽  
Wei Li Liu ◽  
Qing Wan ◽  
Fu Min Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Ion Beam ◽  
Optical And Electrical Properties ◽  
Oxide Thin Films ◽  
Ion Beam Assisted Deposition ◽  
P Type
Sign in / Sign up

Export Citation Format

Share Document