Ion Beam Modification of Cluster-Covered Silicon Surfaces

1996 ◽  
Vol 439 ◽  
Author(s):  
O. V. Gulko ◽  
M. T. Zinke-Allmang
Keyword(s):  
Crystalline Silicon ◽  
Defect Density ◽  
Ion Beam ◽  
High Vacuum ◽  
Finite Size ◽  
Areal Density ◽  
Ultra High Vacuum ◽  
Heteroepitaxial Growth ◽  
Ion Beam Modification ◽  
Density Reduction

AbstractClusters of independently tailored areal density and size distribution were grown on semiconductor surfaces in ultra-high vacuum and used as masks for selective ion beam modification. First studies were undertaken to characterize the vertical interface between areas exposed to low energy ion beams and areas covered by clusters (crystalline silicon). Selective etching was employed to create a patterned surface as a substrate for heteroepitaxial growth of thick Ge layers to test defect density reduction due to finite size growth areas. The quality of the overlayers is discussed.

Ion Beam Modification of Cluster-Covered Silicon Surfaces

1996 ◽  
Vol 438 ◽  
Author(s):  
O. V. Gulko ◽  
M. T. Zinke-Allmang
Keyword(s):  
Crystalline Silicon ◽  
Defect Density ◽  
Ion Beam ◽  
High Vacuum ◽  
Finite Size ◽  
Areal Density ◽  
Ultra High Vacuum ◽  
Heteroepitaxial Growth ◽  
Ion Beam Modification ◽  
Density Reduction

AbstractClusters of independently tailored areal density and size distribution were grown on semiconductor surfaces in ultra-high vacuum and used as masks for selective ion beam modification. First studies were undertaken to characterize the vertical interface between areas exposed to low energy ion beams and areas covered by clusters (crystalline silicon). Selective etching was employed to create a patterned surface as a substrate for heteroepitaxial growth of thick Ge layers to test defect density reduction due to finite size growth areas. The quality of the overlayers is discussed.

An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

1988 ◽  
Vol 46 ◽  
pp. 884-885
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Metal Base ◽  
In Situ Experiments ◽  
Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

Carbon Nitride Film Formation by Low Energy Positive and Negative Ion Beam Deposition

1996 ◽  
Vol 438 ◽  
Author(s):  
N. Tsubouchi ◽  
Y. Horino ◽  
B. Enders ◽  
A. Chayahara ◽  
A. Kinomura ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
High Vacuum ◽  
Negative Ions ◽  
Low Energy ◽  
Ultra High Vacuum ◽  
Negative Ion ◽  
Nitride Film ◽  
Ion Energy

AbstractUsing a newly developed ion beam apparatus, PANDA (Positive And Negative ions Deposition Apparatus), carbon nitride films were prepared by simultaneous deposition of mass-analyzed low energy positive and negative ions such as C2-, N+, under ultra high vacuum conditions, in the order of 10−6 Pa on silicon wafer. The ion energy was varied from 50 to 400 eV. The film properties as a function of their beam energy were evaluated by Rutherford Backscattering Spectrometry (RBS), Fourier Transform Infrared spectroscopy (FTIR) and Raman scattering. From the results, it is suggested that the C-N triple bond contents in films depends on nitrogen ion energy.

Large Area Surface Treatment by Ion Beam Technology

1996 ◽  
Vol 438 ◽  
Author(s):  
R. L. C. Wu ◽  
W. Lanter
Keyword(s):  
Ion Beam ◽  
High Vacuum ◽  
Polycrystalline Diamond ◽  
Carbon Films ◽  
Ultra High Vacuum ◽  
Diamond Like Carbon ◽  
Chemical Compositions ◽  
Rf Power ◽  
Large Area ◽  
Ion Energy

AbstractAn ultra high vacuum ion beam system, consisting of a 20 cm diameter Rf excilted (13.56 MHz) ion gun and a four-axis substrate scanner, has been used to modify large surfaces (up to 1000 cm2) of various materials, including; infrared windows, silicon nitride, polycrystalline diamond, 304 and 316 stainless steels, 440C and M50 steels, aluminum alloys, and polycarbonates; by depositing different chemical compositions of diamond-like carbon films. The influences of ion energy, Rf power, gas composition (H2/CH4 , Ar/CH4 and O2/CH4/H2), on the diamond-like carbon characteristics has been studied. Particular attention was focused on adhesion, environmental effects, IR(3–12 μm) transmission, coefficient of friction, and wear factors under spacelike environments of diamond-like carbon films on various substrates. A quadrupole mass spectrometer was utilized to monitor the ion beam composition for quality control and process optimization.

A Compact Nuclear Microprobe With a Liquid Metal Ion Source and a Toroidal Analyzer

1992 ◽  
Vol 295 ◽  
Author(s):  
Mikio Takai ◽  
Ryou Mimura ◽  
Hiroshi Sawaragi ◽  
Ryuso Aihara
Keyword(s):  
Liquid Metal ◽  
Metal Ion ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Vacuum ◽  
Spot Size ◽  
Ion Source ◽  
Ultra High Vacuum ◽  
Atomic Resolution ◽  
Nuclear Microprobe

AbstractA nondestructive three-dimensional RBS/channeling analysis system with an atomic resolution has been designed and is being constructed in Osaka University for analysis of nanostructured surfaces and interfaces. An ultra high-vacuum sample-chamber with a threeaxis goniometer and a toroidal electrostatic analyzer for medium energy ion scattering (MEIS) was combined with a short acceleration column for a focused ion beam. A liquid metal ion source (LMIS) for light metal ions such as Li+ or Be+ was mounted on the short column.A minimum beam spot-size of about 10 nm with a current of 10 pA is estimated by optical property calculation for 200 keV Li+ LMIS. An energy resolution of 4 × 10-3 (AE/E) for the toroidal analyzer gives rise to atomic resolution in RBS spectra for Si and GaAs. This system seems feasible for atomic level analysis of localized crystalline/disorder structures and surfaces.

Damage Performance of Ion Beam Sputtered Sc2O3 and HfO2 Single Layers Tested in Air and Ultra-high Vacuum

2017 ◽  
Author(s):  
P. F. Langston ◽  
D. Patel ◽  
B. A. Reagan ◽  
F. J. Furch ◽  
A. H. Curtis ◽  
...  
Keyword(s):  
Ion Beam ◽  
High Vacuum ◽  
Ultra High Vacuum

Amorphous Silicon Films and Superlattices Grown by Molecular Beam Epitaxy: An Optical Analysis

2002 ◽  
Vol 715 ◽  
Author(s):  
D. J. Lockwood ◽  
J.-M. Baribeau ◽  
M. Noël ◽  
J. C. Zwinkels ◽  
B. J. Fogal ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Amorphous Silicon ◽  
Molecular Beam ◽  
Crystalline Silicon ◽  
Quartz Substrate ◽  
High Vacuum ◽  
Impurity Content ◽  
Thin Layers ◽  
Silicon Films ◽  
Ultra High Vacuum

AbstractWe produce a novel form of amorphous silicon through ultra-high-vacuum molecular beam epitaxy. By depositing silicon atoms onto a fused quartz substrate at temperatures between 98 and 335°C, we obtain a silicon-based material that lacks the characteristic periodicity of crystalline silicon but nevertheless has 98% of its density. The impurity content of this material is studied through infrared and secondary ion mass spectroscopies. The primary impurity found is oxygen, with hydrogen and carbon atoms also being found at trace levels. The Raman spectra of the amorphous silicon films are measured and the results, as they relate to the presence of disorder, are interpreted. We also use this molecular beam epitaxy method to fabricate a number of amorphous silicon superlattices, comprised of thin layers of amorphous silicon separated with even thinner layers of SiO2. The optical properties of the films and superlattices are contrasted.

scholarly journals Contribution of Different Noise Sources to the Relative Instability of Laser Systems Stabilized by External Silicon Cavities

Vestnik RFFI ◽  
2019 ◽  
Author(s):  
Denis S . Kryuchkov ◽  
Gulnara A. Vishnyakova ◽  
Ksenia Yu. Khabarova ◽  
Konstantin S. Kudeyarov ◽  
Nikita O. Zhadnov ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
High Vacuum ◽  
Frequency Instability ◽  
Ultra High Vacuum ◽  
Signal Frequency ◽  
Noise Sources ◽  
Fabry Perot ◽  
Laser Systems ◽  
Stable Laser ◽  
Frequency Counting

Here we consider creation of laser systems stabilized by external macroscopic monolithic Fabry – Perot cavities made of single-crystalline silicon operating at cryogenic temperatures. Fundamental thermal noise floor for fractional frequency instability was evaluated with its dependency on cavity’s spacer, mirror’s substrate and coatings material. Silicon cavities with dielectric SiO2 /Ta2 O5 and crystalline GaAs/InGaAs mirror coatings were created, its finesse at room temperatures was investigated. Two ultra-high vacuum optical cryostats were developed. Two ultra-stable laser systems based on cavities with dielectric mirrors were assembled. Comparison scheme via beat signal frequency counting was implemented for the characterization purpose. Different noise sources presenting at assembled systems are considered. Its impact to relative frequency instability of our laser systems is being explored.

scholarly journals Navigate flying molecular elephants safely to the ground: mass-selective soft landing up to the Mega-Dalton range by Electrospray Controlled Ion-Beam Deposition

2021 ◽  
Author(s):  
Andreas Walz ◽  
Karolina Stoiber ◽  
Annette Huettig ◽  
Hartmut Schlichting ◽  
Johannes V Barth
Keyword(s):  
Ion Beam ◽  
High Vacuum ◽  
Mass Range ◽  
Ultra High Vacuum ◽  
Scanning Tunneling ◽  
Soft Landing ◽  
Ion Beam Deposition ◽  
Maximum Resolution ◽  
Ion Guides ◽  
Beam Deposition

The prototype of a highly versatile and efficient preparative mass spectrometry system used for the deposition of molecules in ultra-high vacuum (UHV) is presented, along with encouraging performance data obtained on four model species which are thermolabile or not sublimable. The test panel comprises two small organic compounds, a protein, and a large DNA species covering a 4-log mass range up to 1.7 MDa as part of a broad spectrum of analyte species evaluated to date. Three designs of innovative ion guides, a novel digital mass-selective quadrupole (dQMS) and a standard electrospray ionization (ESI) source are combined to an integrated device, abbreviated Electrospray Controlled Ion Beam Deposition (ES-CIBD). Full control is achieved by i) the square-wave-driven radiofrequency (RF) ion guides with steadily tunable frequencies, including a dQMS allowing for investigation, purification and deposition of a virtually unlimited m/z range, ii) the adjustable landing energy of ions down to ~2 eV/z enabling integrity-preserving soft-landing, iii) the deposition in UHV with high ion beam intensity (up to 3 nA) limiting contaminations and deposition time, and iv) direct coverage control via the deposited charge. The maximum resolution of R=650 and overall efficiency up to T_total=4.4% calculated from solution to UHV deposition are remarkable as well, while the latter is mainly limited by the not yet optimized ionization performance. In the setup presented, a scanning tunneling microscope (STM) is attached for in situ UHV investigation of the deponents demonstrating a selective, structure-preserving process and atomically clean layers.

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