Echelle grating – curved wave-guide demultiplexer for photonic integrated circuits

1992 ◽  
Vol 70 (10-11) ◽  
pp. 928-930
Author(s):  
M. Fallahi ◽  
K. A. McGreer ◽  
A. Delage ◽  
R. Normandin ◽  
I. M. Templeton ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Focused Ion Beam ◽  
Photonic Integrated Circuits ◽  
Ion Beam ◽  
Waveguide Structure ◽  
Active Components ◽  
Channel Spacing ◽  
Ion Beam Lithography ◽  
Echelle Grating ◽  
Wave Guides

A grating spectrometer integrated with curved output wave guides was designed and fabricated in GaAs–AlGaAs waveguide structure for use in the 1 μm wavelength range. By incorporating curved wave guides, a larger separation between output facets was obtained. This is desirable for future integration. High-quality patterns were fabricated by focused ion beam lithography and reactive ion etching. Eight outputs with a channel spacing of 2 nm were obtained. The potential of the structure for integration with active components is discussed.

Turning Sample Into (Re)Solution—Focused Ion Beam Shaped Solid Immersion Lenses

2015 ◽  
Author(s):  
Philipp Scholz ◽  
Michael Sadowski ◽  
Christian Boit ◽  
Sebastian Kupijai ◽  
Marvin Henniges ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Photonic Integrated Circuits ◽  
Ion Beam ◽  
Signal Transmission ◽  
Optical Signal ◽  
Analysis Process ◽  
First Case ◽  
Solution Focused

Abstract This work is a unique solution for enhancing optical failure analysis and optical signal transmission. Optical failure analysis remains to be a vital part of the analysis process, despite shrinking feature sizes and challenging package technologies. The presented optical signal transmission supports the development of photonic integrated circuits. The key component is a Focused Ion Beam (FIB) process which shapes optical lenses out of the sample material leading to an improvement in lateral resolution and signal transmission. Two cases are shown that demonstrate these improvements. The first case is an optical backside analysis in a spatially confined opening of a package where other Solid Immersion Lens (SIL) systems could not be applied. It offers an improvement in spatial resolution by a factor of 2, down to a FWHM of 387 nm. The second case is a novel application for FIB shaped lenses aiming at photonic integrated circuits. This lens is created out of the isolating frontside and improves the grating coupler efficiency by a factor of 4.1.

Domain patterning thin crystalline ferroelectric film with focused ion beam for nonlinear photonic integrated circuits

2006 ◽  
Vol 100 (10) ◽  
pp. 106103 ◽  
Author(s):  
Xijun Li ◽  
Kazuya Terabe ◽  
Hideki Hatano ◽  
Huarong Zeng ◽  
Kenji Kitamura
Keyword(s):  
Integrated Circuits ◽  
Focused Ion Beam ◽  
Photonic Integrated Circuits ◽  
Ion Beam ◽  
Ferroelectric Film

Fluorocarbon Precursor for High Aspect Ratio via Milling in Focused Ion Beam Modification of Integrated Circuits

2004 ◽  
Author(s):  
Valery Ray
Keyword(s):  
Side Effects ◽  
Aspect Ratio ◽  
Integrated Circuits ◽  
High Aspect Ratio ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Enabling Technology ◽  
Si Substrate ◽  
Ion Beam Modification ◽  
The Past

Abstract Gas Assisted Etching (GAE) is the enabling technology for High Aspect Ratio (HAR) circuit access via milling in Focused Ion Beam (FIB) circuit modification. Metal interconnect layers of microelectronic Integrated Circuits (ICs) are separated by Inter-Layer Dielectric (ILD) materials, therefore HAR vias are typically milled in dielectrics. Most of the etching precursor gases presently available for GAE of dielectrics on commercial FIB systems, such as XeF2, Cl2, etc., are also effective etch enhancers for either Si, or/and some of the metals used in ICs. Therefore use of these precursors for via milling in dielectrics may lead to unwanted side effects, especially in a backside circuit edit approach. Making contacts to the polysilicon lines with traditional GAE precursors could also be difficult, if not impossible. Some of these precursors have a tendency to produce isotropic vias, especially in Si. It has been proposed in the past to use fluorocarbon gases as precursors for the FIB milling of dielectrics. Preliminary experimental evaluation of Trifluoroacetic (Perfluoroacetic) Acid (TFA, CF3COOH) as a possible etching precursor for the HAR via milling in the application to FIB modification of ICs demonstrated that highly enhanced anisotropic milling of SiO2 in HAR vias is possible. A via with 9:1 aspect ratio was milled with accurate endpoint on Si and without apparent damage to the underlying Si substrate.

Microstructures of GaAs fabricated by finely focused ion beam lithography

1989 ◽  
Vol 9 (1-4) ◽  
pp. 277-279 ◽  
Author(s):  
Takao Shiokawa ◽  
Pil Hyon Kim ◽  
Manabu Hamagaki ◽  
Tamio Hara ◽  
Yoshinobu Aoyagi ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Lithography

Boron nitride stamp for ultra-violet nanoimprinting lithography fabricated by focused ion beam lithography

2007 ◽  
Vol 18 (46) ◽  
pp. 465302 ◽  
Author(s):  
Ali Ozhan Altun ◽  
Jun-Ho Jeong ◽  
Jong-Joo Rha ◽  
Ki-Don Kim ◽  
Eung-Sug Lee
Keyword(s):  
Boron Nitride ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ultra Violet ◽  
Ion Beam Lithography

Fabrication of Sub-250nm High Aspect Ratio Apertures by Focused Ion Beam Lithography

2006 ◽  
Vol 983 ◽  
Author(s):  
Todd Simpson ◽  
Ian V Mitchell
Keyword(s):  
Silicon Nitride ◽  
High Resolution ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Gold Films ◽  
Ion Beam Lithography ◽  
Diameter Hole ◽  
Sem Imaging ◽  
Aperture Arrays

AbstractAperture arrays were fabricated in 1.0µm thick gold films supported on 20nm thick silicon nitride membranes. Lithographic milling strategies in gold were evaluated through the use of in-situ sectioning and high resolution SEM imaging with the UWO CrossBeam FIB/SEM. A successful strategy for producing a 250nm diameter hole with sidewalls approaching vertical is summarized.

scholarly journals Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates

Nanomaterials ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 508 ◽  
Author(s):  
Stanislav Tiagulskyi ◽  
Roman Yatskiv ◽  
Hana Faitová ◽  
Šárka Kučerová ◽  
David Roesel ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Zno Nanorods ◽  
Carrier Injection ◽  
Ion Beam Lithography ◽  
Current Voltage ◽  
P Type ◽  
Surface Leakage

We study the effect of thermal annealing on the electrical properties of the nanoscale p-n heterojunctions based on single n-type ZnO nanorods on p-type GaN substrates. The ZnO nanorods are prepared by chemical bath deposition on both plain GaN substrates and on the substrates locally patterned by focused ion beam lithography. Electrical properties of single nanorod heterojunctions are measured with a nanoprobe in the vacuum chamber of a scanning electron microscope. The focused ion beam lithography provides a uniform nucleation of ZnO, which results in a uniform growth of ZnO nanorods. The specific configuration of the interface between the ZnO nanorods and GaN substrate created by the focused ion beam suppresses the surface leakage current and improves the current-voltage characteristics. Further improvement of the electrical characteristics is achieved by annealing of the structures in nitrogen, which limits the defect-mediated leakage current and increases the carrier injection efficiency.

Precision TEM Specimen Preparation for Integrated Circuits using Dual-Beam FIB Lift-Out Technique

2000 ◽  
Vol 6 (S2) ◽  
pp. 516-517
Author(s):  
Youren Xu ◽  
Chris Schwappach ◽  
Ron Cervantes
Keyword(s):  
Integrated Circuits ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Single Beam ◽  
Dual Beam ◽  
Technological Advances ◽  
Endpoint Control ◽  
Practical Standpoint ◽  
Beam Damage

Focused ion beam lift-out technique has become increasingly attractive to the TEM community due to its unique advantage of no mechanical grinding/polishing involved in the process [1-3]. The technique essentially consists of two parts: preparation of membrane using focused ion beam (FIB) and transfer of the membrane (lift-out) to a grid. Up to date, this technique has only been demonstrated on single beam FIB systems. From a practical standpoint, overall sample quality (thickness) and lack of end-point precision are two major issues associated with the conventional single beam FIB technique. These issues are primarily related to ion beam damage and endpoint control encountered during the final stages of specimen thinning. As a result, the widespread use of FIB lift-out technique for high precision TEM specimen preparation has been limited. Recent technological advances have made it possible to combine both an electron beam column and an ion beam column into an integrated dual beam-focused ion beam (DB-FIB) system.

Fabrication of Nano- and Micro-Scale UV Imprint Stamp Using Diamond-Like Carbon Coating Technology

2006 ◽  
Vol 6 (11) ◽  
pp. 3619-3623
Author(s):  
Eung-Sug Lee ◽  
Jun-Ho Jeong ◽  
Ki-Don Kim ◽  
Young-Suk Sim ◽  
Dae-Geun Choi ◽  
...  
Keyword(s):  
Nanoimprint Lithography ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Adhesive Layer ◽  
Diamond Like Carbon ◽  
Coating Process ◽  
Ion Beam Lithography ◽  
Two Photon ◽  
Dlc Coating ◽  
Two Photon Polymerization

Two-dimensional (2-D) and three-dimensional (3-D) diamond-like carbon (DLC) stamps for ultraviolet nanoimprint lithography were fabricated with two methods: namely, a DLC coating process, followed by focused ion beam lithography; and two-photon polymerization patterning, followed by nanoscale-thick DLC coating. We used focused ion beam lithography to fabricate 70 nm deep lines with a width of 100 nm, as well as 70 nm deep lines with a width of 150 nm, on 100 nm thick DLC layers coated on quartz substrates. We also used two-photon polymerization patterning and a DLC coating process to successfully fabricate 200 nm wide lines, as well as 3-D rings with a diameter of 1.35 μm and a height of 1.97 μm, and a 3-D cone with a bottom diameter of 2.88 μm and a height of 1.97 μm. The wafers were successfully printed on an UV-NIL using the DLC stamps without an anti-adhesive layer. The correlation between the dimensions of the stamp's features and the corresponding imprinted features was excellent.

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