Development of wide range energy focused ion beam lithography system

1998 ◽  
Vol 16 (4) ◽  
pp. 2484 ◽  
Author(s):  
M. Kinokuni
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Lithography ◽  
Wide Range ◽  
Lithography System

Development of a focused-ion-beam lithography system

1987 ◽  
Vol 6 (1-4) ◽  
pp. 361-366 ◽  
Author(s):  
H. Sawaragi ◽  
R. Aihara ◽  
S. Matsui ◽  
K. Mori ◽  
M.Hassel Shearer
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Lithography ◽  
Lithography System

Compact column design for a focused ion-beam lithography system

1999 ◽  
Author(s):  
Qing Ji ◽  
Tsu-Jae King ◽  
Yvette Y. Lee ◽  
Ka-Ngo Leung
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Lithography ◽  
Column Design ◽  
Lithography System

Multispecies focused ion beam lithography system and its applications

2013 ◽  
Vol 31 (6) ◽  
pp. 06F404 ◽  
Author(s):  
Sven Bauerdick ◽  
Lars Bruchhaus ◽  
Paul Mazarov ◽  
Achim Nadzeyka ◽  
Ralf Jede ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Lithography ◽  
Lithography System

Maskless ion beam lithography system

1999 ◽  
Vol 46 (1-4) ◽  
pp. 469-472 ◽  
Author(s):  
Y. Lee ◽  
R.A. Gough ◽  
T.J. King ◽  
Q. Ji ◽  
K.N. Leung ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Lithography ◽  
Lithography System

Microstructures of GaAs fabricated by finely focused ion beam lithography

1989 ◽  
Vol 9 (1-4) ◽  
pp. 277-279 ◽  
Author(s):  
Takao Shiokawa ◽  
Pil Hyon Kim ◽  
Manabu Hamagaki ◽  
Tamio Hara ◽  
Yoshinobu Aoyagi ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Lithography

Boron nitride stamp for ultra-violet nanoimprinting lithography fabricated by focused ion beam lithography

2007 ◽  
Vol 18 (46) ◽  
pp. 465302 ◽  
Author(s):  
Ali Ozhan Altun ◽  
Jun-Ho Jeong ◽  
Jong-Joo Rha ◽  
Ki-Don Kim ◽  
Eung-Sug Lee
Keyword(s):  
Boron Nitride ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ultra Violet ◽  
Ion Beam Lithography

Fabrication of Sub-250nm High Aspect Ratio Apertures by Focused Ion Beam Lithography

2006 ◽  
Vol 983 ◽  
Author(s):  
Todd Simpson ◽  
Ian V Mitchell
Keyword(s):  
Silicon Nitride ◽  
High Resolution ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Gold Films ◽  
Ion Beam Lithography ◽  
Diameter Hole ◽  
Sem Imaging ◽  
Aperture Arrays

AbstractAperture arrays were fabricated in 1.0µm thick gold films supported on 20nm thick silicon nitride membranes. Lithographic milling strategies in gold were evaluated through the use of in-situ sectioning and high resolution SEM imaging with the UWO CrossBeam FIB/SEM. A successful strategy for producing a 250nm diameter hole with sidewalls approaching vertical is summarized.

scholarly journals Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates

Nanomaterials ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 508 ◽  
Author(s):  
Stanislav Tiagulskyi ◽  
Roman Yatskiv ◽  
Hana Faitová ◽  
Šárka Kučerová ◽  
David Roesel ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Zno Nanorods ◽  
Carrier Injection ◽  
Ion Beam Lithography ◽  
Current Voltage ◽  
P Type ◽  
Surface Leakage

We study the effect of thermal annealing on the electrical properties of the nanoscale p-n heterojunctions based on single n-type ZnO nanorods on p-type GaN substrates. The ZnO nanorods are prepared by chemical bath deposition on both plain GaN substrates and on the substrates locally patterned by focused ion beam lithography. Electrical properties of single nanorod heterojunctions are measured with a nanoprobe in the vacuum chamber of a scanning electron microscope. The focused ion beam lithography provides a uniform nucleation of ZnO, which results in a uniform growth of ZnO nanorods. The specific configuration of the interface between the ZnO nanorods and GaN substrate created by the focused ion beam suppresses the surface leakage current and improves the current-voltage characteristics. Further improvement of the electrical characteristics is achieved by annealing of the structures in nitrogen, which limits the defect-mediated leakage current and increases the carrier injection efficiency.

scholarly journals An Experiment-Based Profile Function for the Calculation of Damage Distribution in Bulk Silicon Induced by a Helium Focused Ion Beam Process

Sensors ◽  
2020 ◽  
Vol 20 (8) ◽  
pp. 2306 ◽  
Author(s):  
Qianhuang Chen ◽  
Tianyang Shao ◽  
Yan Xing
Keyword(s):  
Beam Energy ◽  
Focused Ion Beam ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Single Crystalline Silicon ◽  
Nanostructure Fabrication ◽  
Profile Function ◽  
Single Crystalline ◽  
Prediction Function ◽  
Wide Range

The helium focused ion beam (He-FIB) is widely used in the field of nanostructure fabrication due to its high resolution. Complicated forms of processing damage induced by He-FIB can be observed in substrates, and these damages have a severe impact on nanostructure processing. This study experimentally investigated the influence of the beam energy and ion dose of He-FIB on processing damage. Based on the experimental results, a prediction function for the amorphous damage profile of the single-crystalline silicon substrate caused by incident He-FIB was proposed, and a method for calculating the amorphous damage profile by inputting ion dose and beam energy was established. Based on one set of the amorphous damage profiles, the function coefficients were determined using a genetic algorithm. Experiments on single-crystalline silicon scanned by He-FIB under different process parameters were carried out to validate the model. The proposed experiment-based model can accurately predict the amorphous damage profile induced by He-FIB under a wide range of different ion doses and beam energies.

Assessment of Deformation using the Focused Ion Beam Technique

2000 ◽  
Vol 6 (S2) ◽  
pp. 530-531
Author(s):  
M.G. Burke ◽  
P.T. Duda ◽  
G. Botton ◽  
M. W. Phaneuf
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Site Specificity ◽  
Alloy 600 ◽  
The Past ◽  
Transmission Electron ◽  
Wide Range ◽  
Potential Applications ◽  
Beam Technique ◽  
Significant Attention

Focused Ion Beam (FIB) micromachining techniques have gained significant attention over the past few years as a promising method for the preparation of a variety of metallic and nonmetallic materials for subsequent characterization using transmission electron microscopy (TEM) The advantage of the FIB in terms of site specificity and speed for the preparation of uniform electron transparent sections has opened a wide range of potential applications in materials characterization. The ability to image the sample in the FIB can also provide important microstructural data for materials analysis. In this study, both conventionally electropolished and FIB-ed specimens were prepared in order to characterize the microstructure of a commercially-produced tube of Alloy 600 (approximately Ni-15 Cr-10 Fe- 0.05 C). The electropolished samples were prepared using a solution of 20% HClO4 - 80% CH3OH at ∼-40°C. The FIB sections were obtained from a cross-section of the tube that had been mechanically thinned to ∼100 μm. The section was thinned in a Micrion 2500 FIB system with a Ga ion beam at 50 kV accelerating voltage.

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